雾网络中基于统计分布的内容缓存与交付方案

作为5G中的一种重要模型,雾无线接入网络(Fog Radio Access Network, F-RAN)通过设备到设备通信和无线中继等技术获得了显著的性能增益,而边缘设备中合适的缓存则可以让内容缓存用户(Caching Users, CUs)向内容请求用户(Requesting Users, RUs)直接发送缓存内容,有效减小前传链路的负担和下载延迟。考虑一个F-RAN模型下用户发出请求并获得交付的场景,将每个CU的内容请求队列建模为独立的M/D/1模型,分析导出CUs缓存命中率和平均下载延迟关于内容缓存与交付方案的表达式,证明CUs缓存命中率与内容统计分布之间的联系有助于实现前者的近似最优解。针对在一段时间内的期望视角下建立的优化问题,提出了基于统计分布的算法并注意了执行时的交付控制。仿真结果表明,相较于现有缓存策略,优化内容整体统计分布的方案能够最大化CUs缓存命中率,同时减小平均下载延迟。     

二氧化铪材料中Cu的最佳迁移路径

The movement of Cu in a HfO2-based resistive random access memory （RRAM） device is investigated in depth by first-principle calculations. Thermodynamics analysis shows that the dominant motion of Cu tends to be along the [001] orientation with a faster speed. The migration barriers along different routes are compared and reveal that the [001] orientation is the optimal migration route of Cu in HfO2, which is more favorable for Cu transportation. Furthermore, the preferable HfOz growth orientation along [100], corresponding to Cu migration along [001], is also observed. Therefore, it is proposed that the HfO2 material should grow along [100] and the operating voltage should be applied along [001], which will contribute to the improvement of the response speed and the reduction of power consumption of RRAM.     

光纤通信中8B10B编码器的设计与实现

为了满足光纤通信系统中对线路编码的特殊要求,在深入分析现有8B/10B编码原理的基础上,提出了一种新的将同步块分组法与查找表法相结合的8B/10B编码方案。此方案的优势在于能在同一时钟下同步完成3B/4B编码和5B/6B编码,进而通过Disparity和Running Disparity这两个参数来控制编码后的4 bit数据和6 bit数据,使之结合为10 bit并行数据,最后通过串化器转化为高速的串行数据进行输出。整体设计方案用VHDL硬件语言实现了算法的描述,并在QuartusⅡ软件平台上实现了整个编码器的电路综合和波形仿真,结果表明该方案具有占用资源少、编码速度快、实时性好、可靠性高等优点,并且充分满足光纤通信中对高速数据传输的要求。     

2D MoN1.2-rGO Stacked Heterostructures Enabled Water State Modification for Highly Efficient Interfacial Solar Evaporation

Improving interfacial solar evaporation performance is crucial for the practical application of this technology in solar-driven seawater desalination. Lowering evaporation enthalpy is one of the most promising and effective strategies to significantly improve solar evaporation rate. In this study, a new pathway to lower vaporization enthalpy by introducing heterogeneous interactions between hydrophilic hybrid materials and water molecules is developed. 2D MoN_1.2 nanosheets are synthesized and integrated with rGO nanosheets to form stacked MoN_1.2-rGO heterostructures with massive junction interfaces for interfacial solar evaporation. Molecular dynamics simulation confirms that atomic thick 2D MoN_1.2 and rGO in the MoN_1.2-rGO heterostructures simultaneously interact with water molecules, while the interactions are remarkably different. These heterogeneous interactions cause an imbalanced water state, which easily breaks the hydrogen bonds between water molecules, leading to dramatically lowered vaporization enthalpy and improved solar evaporation rate (2.6 kg m⁻² h⁻¹). This study provides a promising strategy for designing 2D-2D heterostructures to regulate evaporation enthalpy to improve solar evaporate rate for clean water production.     

Tetrabutylammonium Bromide Functionalized Ti3C2Tx MXene as Versatile Cathode Buffer Layer for Efficient and Stable Inverted Perovskite Solar Cells

2D Ti₃C₂T_x MXene, possessing facile preparation, high electrical conductivity, flexibility, and solution processability, shows good application potential for enhancing device performance of perovskite solar cells (PVSCs). In this study, tetrabutylammonium bromide functionalized Ti₃C₂T_x (TBAB-Ti₃C₂T_x) is developed as cathode buffer layer (CBL) to regulate the PCBM/Ag cathode interfacial property for the first time. By virtue of the charge transfer from TBAB to Ti₃C₂T_x demonstrated by electron paramagnetic resonance and density functional theory, the TBAB-Ti₃C₂T_x CBL with high electrical conductivity exhibits significantly reduced work function of 3.9 eV, which enables optimization of energy level alignment and enhancement of charge extraction. Moreover, the TBAB-Ti₃C₂T_x CBL can effectively inhibit the migration of iodine ions from perovskite layer to Ag cathode, which synergistically suppresses defect states and reduce charge recombination. Consequently, utilizing MAPbI₃ perovskite without post-treatment, the TBAB-Ti₃C₂T_x based device exhibits a dramatically improved power conversion efficiency of 21.65% with significantly improved operational stability, which is one of the best efficiencies reported for the devices based on MAPbI₃/PCBM with different CBLs. These results indicate that TBAB-Ti₃C₂T_x shall be a promising CBL for high-performance inverted PVSCs and inspire the further applications of quaternary ammonium functionalized MXenes in PVSCs.     

Advanced Characterization and Optimization of NiOx:Cu-SAM Hole-Transporting Bi-Layer for 23.4% Efficient Monolithic Cu(In,Ga)Se2-Perovskite Tandem Solar Cells

The performance of five hole-transporting layers (HTLs) is investigated in both single-junction perovskite and Cu(In, Ga)Se₂ (CIGSe)-perovskite tandem solar cells: nickel oxide (NiO_x,), copper-doped nickel oxide (NiO_x:Cu), NiO_x+SAM, NiO_x:Cu+SAM, and SAM, where SAM is the [2-(3,-6Dimethoxy-9H-carbazol-9yl)ethyl]phosphonic acid (MeO-2PACz) self-assembled monolayer. The performance of the devices is correlated to the charge-carrier dynamics at the HTL/perovskite interface and the limiting factors of these HTLs are analyzed by performing time-resolved and absolute photoluminescence ((Tr)PL), transient surface photovoltage (tr-SPV), and X-ray/UV photoemission spectroscopy (XPS/UPS) measurements on indium tin oxide (ITO)/HTL/perovskite and CIGSe/HTL/perovskite stacks. A high quasi-Fermi level splitting to open-circuit (QFLS-V_oc) deficit is detected for the NiO_x-based devices, attributed to electron trapping and poor hole extraction at the NiO_x-perovskite interface and a low carrier effective lifetime in the bulk of the perovskite. Simultaneously, doping the NiO_x with 2% Cu and passivating its surface with MeO-2PACz suppresses the electron trapping, enhances the holes extraction, reduces the non-radiative interfacial recombination, and improves the band alignment. Due to this superior interfacial charge-carrier dynamics, NiO_x:Cu+SAM is found to be the most suitable HTL for the monolithic CIGSe-perovskite tandem devices, enabling a power-conversion efficiency (PCE) of 23.4%, V_oc of 1.72V, and a fill factor (FF) of 71%, while the remaining four HTLs suffer from prominent V_oc and FF losses.     

Long Duration Persistent Photocurrent in 3 nm Thin Doped Indium Oxide for Integrated Light Sensing and In-Sensor Neuromorphic Computation

Miniaturization and energy consumption by computational systems remain major challenges to address. Optoelectronics based synaptic and light sensing provide an exciting platform for neuromorphic processing and vision applications offering several advantages. It is highly desirable to achieve single-element image sensors that allow reception of information and execution of in-memory computing processes while maintaining memory for much longer durations without the need for frequent electrical or optical rehearsals. In this work, ultra-thin (<3 nm) doped indium oxide (In₂O₃) layers are engineered to demonstrate a monolithic two-terminal ultraviolet (UV) sensing and processing system with long optical state retention operating at 50 mV. This endows features of several conductance states within the persistent photocurrent window that are harnessed to show learning capabilities and significantly reduce the number of rehearsals. The atomically thin sheets are implemented as a focal plane array (FPA) for UV spectrum based proof-of-concept vision system capable of pattern recognition and memorization required for imaging and detection applications. This integrated light sensing and memory system is deployed to illustrate capabilities for real-time, in-sensor memorization, and recognition tasks. This study provides an important template to engineer miniaturized and low operating voltage neuromorphic platforms across the light spectrum based on application demand.     

High-Resolution and Stable Ruddlesden–Popper Quasi-2D Perovskite Flexible Photodetectors Arrays for Potential Applications as Optical Image Sensor

The development of an efficient fabrication route to achieve high-resolution perovskite pixel array is key for large-scale flexible image sensor devices. Herein, a high-resolution and stable 10 × 10 flexible PDs array based on formamidinium(FA⁺) and phenylmethylammonium (PMA⁺) quasi-2D (PMA)₂FAPb₂I₇ (n = 2) perovskite is demonstrated by developing SiO₂-assisted hydrophobic and hydrophilic treatment process on polyethylene terephthalate substrate. By introducing Au nanoparticles (Au NPs),  the perovskite film quality is improved and grain boundaries are reduced. The mechanism by which Au NPs upgrade the photoelectric quality of perovskite is mainly revealed by glow discharge-optical emission spectroscopy (GD-OES) and grazing-incidence wide-angle X-ray scattering (GIWAXS). To further improve the photoelectric performance of the devices, a post-treatment strategy with formamidinium chloride (FACl) is used . The optimized flexible PDs arrays show excellent optoelectronic properties with a high responsivity of 4.7 A W⁻¹, a detectivity of 6.3 × 10¹² Jones, and a broad spectral sensitivity. The device also exhibits excellent electrical stability even under severe bending and excellent flexural strength, as well as excellent environmental stability. Finally, the integrated flexible PDs arrays are used as sensor pixels in an imaging system to obtain high-resolution imaging patterns, demonstrating the imaging capability of the PDs arrays.     

Exciton Formation Dynamics and Band-Like Free Charge-Carrier Transport in 2D Metal Halide Perovskite Semiconductors

Metal halide perovskite (MHP) semiconductors have driven a revolution in optoelectronic technologies over the last decade, in particular for high-efficiency photovoltaic applications. Low-dimensional MHPs presenting electronic confinement have promising additional prospects in light emission and quantum technologies. However, the optimisation of such applications requires a comprehensive understanding of the nature of charge carriers and their transport mechanisms. This study employs a combination of ultrafast optical and terahertz spectroscopy to investigate phonon energies, charge-carrier mobilities, and exciton formation in 2D (PEA)₂PbI₄ and (BA)₂PbI₄ (where PEA is phenylethylammonium and BA is butylammonium). Temperature-dependent measurements of free charge-carrier mobilities reveal band transport in these strongly confined semiconductors, with surprisingly high in-plane mobilities. Enhanced charge-phonon coupling is shown to reduce charge-carrier mobilities in (BA)₂PbI₄ with respect to (PEA)₂PbI₄. Exciton and free charge-carrier dynamics are disentangled by simultaneous monitoring of transient absorption and THz photoconductivity. A sustained free charge-carrier population is observed, surpassing the Saha equation predictions even at low temperature. These findings provide new insights into the temperature-dependent interplay of exciton and free-carrier populations in 2D MHPs. Furthermore, such sustained free charge-carrier population and high mobilities demonstrate the potential of these semiconductors for applications such as solar cells, transistors, and electrically driven light sources.     

基于偏振不敏感超材料的全光可调谐太赫兹慢光效应研究

太赫兹(terahertz,THz) 慢光效应可以有效地提升THz脉冲数据传输的安全性和存储性,而一般THz慢光器件对入射THz波偏振态变化敏感。本文设计了一种超材料结构,其微结构单元由一个十字型谐振器和4个U型谐振器构成。研究表明:基于超材料的THz慢光效应对线偏振光和圆偏振光均不敏感。通过对超材料结构的参数优化,获得到了最大群折射率为1 618的慢光效应。另外,本文在超材料微结构层和SiO₂衬底之间嵌入了一层二硫化钼(MoS₂)薄膜,当MoS₂的载流子浓度从1.7×10¹⁷ cm-3增大到5.1×10¹⁹ cm-3时,群折射率从1 566减小到26。实现了偏振不敏感全光可调谐的THz慢光效应。该研究有望为偏振不敏感和全光可调谐的THz慢光器件设计提供崭新的研究思路。