配电高级应用软件的组件化研究与开发

论述了高级应用软件在配电管理系统中的地位和组件化实现对配电管理系统的重要意义,分析了J2EE平台及其提供的三种重要组件技术(EJB组件、Servlet组件和JSP组件),介绍了UML统一建模语言,研究了基于J2EE的高级应用软件的组件化设计与开发方法,并以潮流计算为例具体阐述了高级应用软件的组件化实现。     

地区电网调度自动化系统的应用功能

将我国地区调度自动化功能以１０ｋＶ为界分为地区和配电网大部分,前者采用部分能量管理系统（ＥＭＳ）功能,后者采用配电管理系统（ＤＭＳ）功能。在ＤＭＳ中介绍了地理信息系统（ＧＩＳ）的应用。提出了地区调度自动化中人才、规划、工程管理和实用化方面的准备。     

基于CT的男军人三维头面型DMS应用

为了探索现代人体头面型不同地理区域、不同民族间的群体差异，并对现代军人头面部装备的合理设计与配置提供科学的参考和量化的标准，开发了“中国人民解放军男军人三维头面型数据管理系统(DMS)”。以该系统为平台，通过对单个样本的头部CT切片进行检边拟合处理，完成头面型的参数化三维重建，并利用数据库管理的方式对7大军区1082个样本进行科学的计算，生成所需的各个型号的参数化三维标准头型，可用于我军头面部装备分档管理，作为头盔合理优化设计的参考依据，其数据结果也可用作人类学领域研究头面型群体差异的素材。     

乐山市配电自动化和配网管理系统

对乐山城区配电网自动化及管理系统的构成、功能和运行情况做了总体介绍。系统成功的经验表明，配网建设必须从一次网络结构优化入手，并充分发挥配电自动化系统的功能，以满足城市配电网的技术经济要求。     

基于组件式GIS配电网技术

根据电力配网和地理信息系统(GIS)的特征,本文采用组件式GIS和配电管理系统(DMS)技术相结合探讨了配电网技术,着重讨论了配网分析系统(DNAS),具体阐述了DNAS系统中各个组件的功能,指出了该系统对实现电力资源的优化配置和配电网发展的重要意义.     

Ozone assisted partial oxidation of DMS to DMSO on Fe based catalyst

Iron–zirconia catalysts are prepared with varying Fe content by co-precipitation method. Catalysts activity and stability are elucidated in vapour phase oxidation of DMS using ozone as an oxidant and compared with that of oxygen. In absence of ozone the catalysts are observed very low activity whereas the ozone is directly influencing the Fe₂O₃ redox cycle. Results reveal that the Fe content and reaction temperature have significant influence on the activity. The activation energy for conversion process is observed to be considerably low with ozone compared to that of oxygen. The 20% Fe containing catalyst is not deactivated for 80 h of operation.     

XAFS and CEMS study of dilute magneto-optical semiconductor, Fe doped TiO2 films

TiO₂ films doped with 6% Fe were prepared by pulsed laser deposition (PLD) under different oxygen pressures, and characterized by X-ray absorption fine spectra (XAFS) and conversion electron Mössbauer spectra (CEMS). The edge energy and spectrum profiles of Fe- and Ti K X-ray absorption showed only Fe³⁺ and Ti⁴⁺ states for rutile TiO₂ films prepared under 10^− 1 Torr, the metallic Fe and Ti⁴⁺ for rutile TiO₂ films prepared in 10^− 6 Torr, and the metallic Fe and the average valance of less than “4+” for Ti in Ti_nO_2n−x films prepared by the PLD under 10^− 8 Torr. The metallic Fe clusters are also found in the TEM images of Ti_nO_2n−x film. Magnetic property of Fe doped TiO₂ films prepared by PLD at high vacuum (10^− 6 and 10^− 8 Torr) is considered to originate mainly from the magnetic metal iron clusters.     

Diluted magnetic semiconductor properties of Zn1 − x Cox O: 1 at% Al thin films prepared by pulsed DC magnetron sputtering

Zn_{1 − x} Co_xO: 1 at% Al(x = 0−0.3) films were grown on corning 7059 glass by asymmetrical bipolar pulsed dc magnetron sputtering. The c-axis orientation along the (002) plane was enhanced with increasing Co concentration. The ZnCoO thin films are grown to the fibrous grains of tight dome shape. The transmittance spectra showed that sp-d exchange interactions and typical d-d transitions become activated with increasing Co concentration. The electrical resistivity of ZnCoO films increased ranging from ∼10^{− 3} to ∼10⁻² Ω ⋅ cm with increasing Co concentration, especially it increased greatly at 30 at% Co. X-ray photoelectron spectroscopy and alternating gradient magnetometer analyses indicated that no Co metal cluster in the ZnCoO films is formed and room temperature ferromagnetism is exhibited. These electrical and magnetic properties of ZnCoO films suggest a potential application of dilute magnetic semiconductor devices.     

The Strain-Hardening Behavior of Partially Austenitized and the Austempered Ductile Irons with Dual Matrix Structures

In the current study, an unalloyed ductile iron containing 3.50 C wt.%, 2.63 Si wt.%, 0.318 Mn wt.%, and 0.047 Mg wt.% was intercritically austenitized (partially austenitized) in two-phase regions (α + γ) at different temperatures for 20 min and then was quenched into salt bath held at austempering temperature of 365 °C for various times to obtain different ausferrite plus proeutectoid ferrite volume fractions. Fine and coarse dual matrix structures (DMS) were obtained from two different starting conditions. Some specimens were also conventionally austempered from 900 °C for comparison. The results showed that a structure having proeutectoid ferrite plus ausferrite (bainitic ferrite + high-carbon austenite (retained or stabilized austenite)) has been developed. Both of the specimens with ∼75% ausferrite volume fraction (coarse structure) and the specimen with ∼82% ausferrite volume fraction (fine structure) exhibited the best combination of high strength and ductility compared to the pearlitic grades, but their ductility is slightly lower than the ferritic grades. These materials also satisfy the requirements for the strength of the quenched and tempered grades and their ductility is superior to this grade. The correlation between the strain-hardening rates of the various austempered ductile iron (ADI) with DMS and conventionally heat-treated ADI microstructures as a function of strain was conducted by inspection of the respective tensile curves. For this purpose, the Crussard-Jaoul (C-J) analysis was employed. The test results also indicate that strain-hardening behavior of ADI with dual matrix is influenced by the variations in the volume fractions of the phases, and their morphologies, the degree of ausferrite connectivity and the interaction intensities between the carbon atoms and the dislocations in the matrix. The ADI with DMS generally exhibited low strain-hardening rates compared to the conventionally ADI.     

EXAFS and SR-XRD study on Mn occupations in Zn1−xMnxO diluted magnetic semiconductors

Mn-doped ZnO films were prepared by radio frequency (RF) magnetron sputtering on sapphire substrate. Mn content was determined by proton induced X-ray emission (PIXE). Only Mn, no other magnetic impurities such as Fe, Co and Ni were observed. Also, no precipitates such as MnO, Mn₃O₄ and other secondary phases or Mn clusters, were found by SR-XRD, even in Mn-doped content up to 11 at.%. EXAFS analyses showed that Mn atoms were incorporated into ZnO crystal lattice by occupying the sites of zinc atoms.