三距离交会法在输电线路测量中的应用

针对输电线路测量中,不能直接精确测定钢管杆中心坐标的问题。提出了使用三距离交会的测量方法,以及利用网络RTK配合手持电子测距仪,快速测得钢管杆附近三个点的坐标以及相应距离。针对不同观测数据编写了相应的VB程序,提高了工作效率。     

不完全量测的误差方差约束下的容许采样频率

本文主要研究了不完全量测的误差方差约束下的传感器所能容许的采样频率这一问题. 分析了不完全量测下的目标跟踪系统的误差方差的稳态特性, 给出了不完全量测下误差协方差阵的一些性质. 在给定探测概率下, 利用线性矩阵不等式(LMI)求解这一问题. 工程意义在于, 在满足给定滤波器的误差方差约束指标下, 可以选择采样间隔较长的传感器, 放宽对传感器的采样频率的要求, 从而降低测量装置成本. 数值算例说明了算法的有效性.     

多速率传感器不完全测量数据自适应融合算法

针对不完全测量的多速率传感器系统,建立了自适应的分级融合算法。该算法构建了传感器子系统故障检测方法,检测子系统故障,确认不完全测量,避免单点故障污染整个系统;建立子系统的切换控制逻辑,引入映射矩阵,构成新的信息分享系数,自适应地选择子系统参与中心融合;对于不完全测量信息的传感器子系统,利用子滤波预测值代替估计值进行融合;全局状态估计利用各子系统的当前与前一时刻的估计值,提高了融合性能。对建立的算法进行仿真,验证了该算法的有效性。     

中低轨卫星多普勒数据处理技术研究

分析了中低轨卫星多普勒频率模型特性,采用数据拟合法对多普勒数据进行处理,有效抑制随机误差。仿真结果表明,经过处理后的观测数据精度得到了明显提高。     

Determination of the Superconducting Penetration Depth From Coplanar-Waveguide Measurements

We introduce a novel transmission-line method for determining the penetration depth in thin high-temperature superconducting (HTS) films. The method is based on the accurate measurement of the inductance per unit length of a superconducting coplanar-waveguide (CPW) transmission line fabricated on the HTS sample. Using the experimentally obtained inductance per unit length, we interpolate the penetration depth from a table of numerically determined values of inductance (per unit length) as a function of penetration depth, calculated from a coupled transmission-line model. A novelty of our procedure is the utilization of the multiline thru-reflect-line (TRL) method and the calibration-comparison method to accurately determine the inductance per unit length of the superconducting transmission line. By measuring different CPW geometries patterned onto the same thin-film sample, we can verify our penetration depth values. We demonstrate this technique by extracting the penetration depth for several different HTS films at 76 K. Estimated uncertainties in the extracted penetration depth are also provided. Contribution of an agency of the US government not subject to copyright.     

Analysis of digital spectral processing of laser Doppler vibration meter signals

A digital spectral method of the maximum harmonic for processing laser Doppler vibration meter signals from a surface vibrating according to a harmonic rule is analyzed. A digital model for this signal in the presence of additive and multiplicative noises is suggested. Examples are given for the effect of signal discretization frequency on the error of determining vibration amplitude. __________ Translated from Izmeritel’naya Tekhnika, No. 9, pp. 42–45, September, 2006.     

Magnetic properties and microstructure of FePt–SiO2 nanocomposite films fabricated by nanocluster beam technology

Nanocluster beam technology combined with conventional sputtering was used to fabricate FePt–SiO₂ nanocomposite films in this present work. The post-deposition annealing affected the final particle size and size distribution of FePt nanoclusters. The effects of both volume fraction of SiO₂ matrix and annealing temperature on magnetic and microstructural properties were studied. Partial ordering, grain growth and agglomeration of FePt particles in FePt–SiO₂ nanocomposite films occurred during annealing. A higher volume fraction of SiO₂ matrix was effective in suppressing diffusion of atoms and magnetic exchange coupling of FePt grains. Excessive SiO₂ however resulted in a lower degree of FePt ordering and thus lower coercivity.     

一种推导黑体温度变换的简易新方法

近一个世纪以来,对黑体相对论温度变换的讨论一直在进行着。其中最具代表性的变换是在上世纪六十年代,由R.N.Bracewell等人以从实验发现的3K宇宙背景辐射为基础、从与实验符合很好的Plank黑体辐射公式出发,用不同方法得到的变换式T=T0     

Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials

Metal-oxide-semiconductor capacitors based on HfO₂ gate stack with different metal and metal compound gates (Al, TiN, NiSi and NiAlN) are compared to study the effect of the gate electrode material on the trap density at the insulator–semiconductor interface.C–V and G–ω measurements were made in the frequency range from 1 kHz to 1 MHz in the temperature range 180–300 K. From the maximum of the plot G/ω vs. ln(ω) the density of interface states was calculated, and from its position on the frequency axis the trap cross-section was found. Reducing temperature makes it possible to decrease leakage current through the dielectric and to investigate the states located closer to the band edge.The structures under study were shown to contain significant interface trap densities located near the valence band edge (around 2×10¹¹ cm⁻²eV⁻¹ for Al and up to (3.5–5.5)×10¹² cm⁻² eV⁻¹ for other gate materials). The peak in the surface state distribution is situated at 0.18 eV above the valence band edge for Al electrode. The capture cross-section is 5.8×10⁻¹⁷ cm² at 200 K for Al–HfO₂–Si structure.     

声诱饵回波模拟器仿真研究

随着水声技术的发展，水下武器对抗也日趋复杂。能够模拟目标回波的主动式声诱饵的出现，为对抗主动自导鱼雷及主动声纳提供了非常重要的帮助。着重对声诱饵的回波模拟器的作用机理进行了分析，然后给出了脉冲宽度、多普勒频移、时延与展宽、目标强度：最大回波强度等回波特征参数的估计方法，并对可以同时对抗声自导鱼雷和主动声纳的某声诱饵回波模拟器进行了仿真研究，并给出了仿真结果，对水声对抗技术研究有着重要的参考价值。