Influence of the intrinsic layer characteristics on a-Si:H p–i–n solar cell performance analysed by means of a computer simulation

In this paper a set of one-dimensional simulations of a-Si:H p–i–n junctions under different illumination conditions and with different intrinsic layer are presented. The simulation program ASCA permits the analysis of the internal electrical behaviour of the cell allowing a comparison among the different internal configurations determined by a change in the input set. Results about the internal electric configuration will be presented and discussed outlining their influence on the current tension characteristic curve. Considerations about the drift–diffusion and the generation–recombination balance distributions, outlined by the simulation, can be used to explain the correlation between the basic device output, the i-layer characteristics (thickness and DOS), the incident radiation intensity and photon energy.     

浅谈水利枢纽道路工程建设中的几个问题及其对策

从水利枢纽工程建设的实际出发,分析了枢纽道路建设中的几个值得考虑的基本问题。针对永久性道路的建设环境和建筑特点以及临时性道路的复杂性和多样性,提出了永久性道路和临时性道路建设的基本对策。基于高新技术材料HEC作为道路建筑胶凝材料的实际工程应用,在道路结构布局观念、设计思想、建筑选材和施工工艺及其技术经济性能比等方面提出了枢纽道路工程建设的实施方案,其有效性和可推广性在水布垭道路工程建设中得到了印证。     

千米桥东潜山天然气地球化学特征及成因探索

通过地化分析，结合地质条件等，对千米桥东潜山天然气地球化学特征进行了剖析，并对其气藏的形成进行了探索，结果认为：千米桥东潜山天然气为无机二氧化碳、偏腐殖型有机气，腐泥型有机气的复合气，主源为东部歧口凹陷沿岩带深层（偏）腐殖型气，烃类气体聚集时间晚，为更新世明化镇沉积时其，而无机二氧化碳聚集时间早于烃类气体；与千米桥凝析气藏不同的是该气藏CO2含量高。     

利用新型场效应管(QFET)的正向变换器

介绍了单端正向变换器基本电路，重点叙述带三路调节DC电压的100KHZ180W离线电源。它采用具有低导电阻RDS和低栅极电荷Qg的新型场效应管（QFET）作为变换电路的主开关器件，降低了电源开关损耗并提高了效率3%-5%。     

5754-H34铝合金板材生产工艺研究

研究了不同冷变形程度，退火温度对5754铝合金冷轧板材的组织和力学性能的影响，确定了5754合金H34状态板材的生产工艺参数，即冷变形程度25%-45￥，稳定化退火温度120-160℃，保温时间3-6h，在工业生产条件下，其产品的技术指标达到了用户要求。     

建筑墙体表面传热系数辨识研究

对实验房间南向墙体内表面中心区域的换热过程进行实验，发现当风速在0－5．5m/s之间时，表面传热系数在8－18W（m^2.K）之间波动，而风向对墙体表面传热系数影响不大；用辅助变量法分析墙体表面传热过程，并结合实验推导出墙体表面传热系数。模型的预测结果与实测结果吻合良好。     

LQG/H∞控制设计:动态反馈控制

本文讨论了综合LQG与H∞优化的控制器设计问题.这个反馈控制器是在满足某个给 定传递函数矩阵的H∞范数约束条件下,使得系统的给定的二次性能指标达到最小的控制器.     

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本文应用天然气中甲烷、乙烷的碳同位素,甲烷的氢同位素,汞含量及天然气成分等指标,探讨了四川盆地天然气成因分类;并结合地质情况对气源层进行了探讨。     

Deposition of thin film silicon using the pulsed PECVD and HWCVD techniques

We report on the use of pulsed plasma-enhanced chemical vapor deposition (P-PECVD) technique and show that “state-of-the-art” amorphous silicon (a-Si:H) materials and solar cells can be produced at a deposition rate of up to 15 Å/s using a modulation frequency in the range 1–100 kHz. The approach has also been developed to deposit materials and devices onto large area, 30 cm×40 cm, substrates with thickness uniformity (<5%), and gas utilization rate (>25%). We have developed a new “hot wire” chemical vapor deposition (HWCVD) method and report that our new filament material, graphite, has so far shown no appreciable degradation even after deposition of 500 μm of amorphous silicon. We report that this technique can produce “state-of-the-art” a-Si:H and that a solar cell of p/i/n configuration exhibited an initial efficiency approaching 9%. The use of microcrystalline silicon (μc-Si) materials to produce low-cost stable solar cells is gaining considerable attention. We show that both of these techniques can produce thin film μc-Si, dependent on process conditions, with 1 1 1 and/or 2 2 0 orientations and with a grain size of approx. 500 A. Inclusion of these types of materials into a solar cell configuration will be discussed.     

MG—375/750采煤机液压系统的污染控制

介绍了MG— 375 75 0采煤机液压系统污染危害的种类及控制方法 ,并收到了良好效果