Al2O3—TiB2陶瓷刀具材料的高温氧化及其对刀具耐磨性能的影响

研究了Ａｌ２Ｏ３－ＴｉＢ２陶瓷刀具材料在１０００℃下的氧化行为，用ＸＲＤ、ＳＥＭ分析了氧化后的相组成及显微结构。结果表明：Ａｌ２Ｏ３－ＴｉＢ２陶瓷材料在１０００℃空气中氧化增重符合抛物线规律；随ＴｉＢ２含量的增加，该材料的抗氧化能力下降。     

2－重自补图论（Ⅲ）──计数理论

文中解决了２－重自补图的计数问题，获得了具有ｐ个顶点的２－重自补图的数目是其中Ｚ（Ａ）表示置换群Ａ的圈指标，Ｓ￣（２）＿ｐ表示ｐ次对称群的对群．     

Phase relations in the system ln-CulnS2

By DTA and x-ray diffraction the phase relations in the pseudobinary system In-CuInS₂ have been investigated. CuInS₂ hs a melting point of 1090° C and within this system there is a broad region of liquid immiscibility. A four phase invariant reaction exists at 633° C which is of the form: L₂ = L₁+ CuInS₂ + InS.     

Precipitation behavior of σ phase in fusion zone of dissimilar stainless steel welds during multi-pass GTAW process

The purpose of this study is to investigate the precipitation characteristics of σ phase in the fusion zone of stainless steel welds at various welding passes during a tungsten are welding (GTAW) process. The morphology, quantity, and chemical composition of the δ-ferrite and σ phase were analyzed using optical microscopy (OM), a ferritscope (FS), a X-ray diffractometer (XRD), scanning electron microscopy (SEM), an electron probe micro-analyzer (EPMA), and a wavelength dispersive spectrometer (WDS), respectively. Massive δ-ferrite was observed in the fusion zone of the first pass welds during welding of dissimilar stainless steels. The σ phase precipitated at the inner δ-ferrite particles and decreased δ-ferrite content during the third pass welding. The σ and δ phases can be stabilized by Si element, which promoted the phase transformation of σ→ϱ+λ₂ in the fusion zone of the third pass welds. It was found that the σ phase was a Fe−Cr−Si intermetallic compound found in the fusion zone of the third pass welds during multi-pass welding.     

一种可用于可调谐环行Ti：Al_2O_3激光器的宽带单向器

本文介绍一种宽带单向器的原理及设计。选用ＴＧＧ作磁旋光介质，旋光石英晶片作补偿片，所设计的色散补偿型宽带单向器预计可在７００～１０００ｎｍ波长范围内实现环行激光腔中的单向行波运行；将其应用在可调谐环行Ｔｉ：Ａｌ２Ｏ３激光器中，获得了良好的实验结果。     

I．O．T．旧梦成真

该文较详细地介绍了Ｉ．Ｏ．Ｔ管的发展历程，其特点及工作方式。     

激光光束质量因子的研究进展

本文详细分析了各种光场下光束质量M2因子。在不同的场中,A.E.Siegman当初所定义的M2因子,已经有了很大的变化,因而M2因子的特性也与当初不同,不仅M2因子可以大于等于1,而且可以小于1,甚至小于0。其反映的物理意义,也从经典场中的衍射极限倍数,变化为非经典场中的准直性量度以及对空间相干性的某些反映。此外还列举并分析了几种特殊的光束质量因子,最后讨论了M2因子应用的问题并指出了其局限性。     

Service life planning and performance requirements

Service life planning comprises a model for the determination of a reasonable expected service life for buildings and components, and it establishes a routine for the assessment of design alternatives. A design option is considered reasonable when it meets or exceeds performance requirements over time that have been drawn up specifically for the specific project. Due to this assessment reference, there is a very evident link to the concept of performance-based building. Any stakeholder involved in the value chain or in the design process of the building, as well as regulators and building users, can express performance requirements. Identified requirements, both in relevance and in quality, will vary with the stakeholder and his/her perspective of interest. As building sector manufacturers develop most products with reference to standards rather than with reference to specific requirements, there is no direct link from user requirements to the product design. Instead, the building designer has the responsibility to ensure performance requirements are met by the performance of products integrated into the design. As these design decisions also have to be made at the material and component level, a performance-based building would benefit from an established rationale that enables the communication of performance requirements across the relevant system levels in the relevant design processes. A path for the connection of the established concepts of service life planning and performance-based building is presented. The aim is to identify key elements that need to be developed for the successful linkage of performance-based building with service life planning.     

提高E^2PROM中NMOS管源漏穿通电压的实验研究

为了提高Ｅ＾２ＰＲＯＭ中Ｎ管源漏穿通电压，用实验的方法对制造工艺进行了研究。结果表明，高能量注入是提高ＶＰＴ的有效手段，但受到ｐｎ结击穿的限制，只适用于低区短沟Ｎ管；ＤＤＤ工艺大幅度高ＶＰＴ，但ｐｎ结击穿电压低于２０Ｖ，不能应用于高压ＭＯＳ管；采用适量的防穿通注入和适当增大沟道长度为最理想的工艺途径。