Schwingfestigkeit von Schraube‐Mutter‐Verbindungen

High cycle fatigue of bolted connections Extensive tests regarding the influences on the fatigue of bolt‐nut‐connections of preloading with torsion, of preloading with yielding, of loading with superimposed bending and of the tested lot are processed. These influences are not yet known according to VDI 2230. New testing devices were designed for these tests, which allow a far less expensive operation and may easily be used for bolts of diameters up to M100 and testing frequencies up to 1000 Hz. The validity of fatigue resistance according to VDI 2230 is specified with respect to the test results. The determined influence of the tested lots is unexpectedly high. The manufacturing process of bolts should be improved to minimize this influence.     

高频数字锁相环的研究

论文阐述了１００ＭＨｚ数字锁相环的设计过程，用１０ＭＨｚ晶体振荡器对１００ＭＨｚ数字压控振荡器进行锁相，使１００ＭＨｚ输出信号指标得到很大改善。论文还分析了各单元电路，关键点时域波形测试，频谱测试。     

HCMOS器件γ辐射损伤电路分析

本文对最基本的HCMOS器件(反相器和与非门)作了γ辐射损伤实验。通过器件性能变化,分析了γ辐射对电路的作用。     

高速钢W6Mo5Cr4V2的脱磷试验

在３０ｋｇ感应炉上用ＣａＯ－Ｎａ２ＣＯ３－ＣａＦ２－ＦｅｘＯ（ＭｏＯ３）渣、ＭｏＣｌ６粉剂和Ａｌ－Ｃａ合金作脱磷剂对高速钢Ｗ６Ｍｏ５Ｃｒ４Ｖ２进行脱磷试验。结果表明，ＣａＯ－Ｎａ２ＣＯ３－ＣａＦ２－ＦｅｘＯ渣的脱磷效果最好，一般脱磷率可达２６％￣５６％。     

氮化钛薄膜的高分辨AES谱和XPS谱研究

着重讨论了TiNx薄膜俄歇电子谱的定量分析方法和X射线光电子谱中线形的变化。利用已知组元强度定量分析技术和Ti的LMV俄歇电子峰，探讨TiNx薄膜中N含量的定量方法。由该方法给出的定量结果与X射线光电子谱定量结果相一致。同时，利用X射线光电子谱测定了TiN和Ti2N2p轨道的结合能。并针对Ti2p峰形随N含量的变化，给出新的解释。     

The influence of dependence of HEMT’s model parameters on gate and drain voltages on upper boundary of LNA’s linearity

On the basis of numerical model the parameters of high electron mobility transistors (HEMT’s) as a function of gate and drain voltages are obtained. The simulation of nonlinear properties of low noise amplifier cascade with HEMT for various modes of its operation has shown that the account of its dependence simultaneously on both the voltages allows to approach the results of calculation to experimental data.     

Theory of a novel voltage-sustaining layer for power devices

The theory of a novel voltage-sustaining layer for power devices, called a Composite Buffer layer (CB-layer for short) is proposed. The CB-layer can be implemented in several ways, one particular implementation is used here, which consists of alternating n- and p-type regions, that are parallel to the direction of the applied electric field. In the off-state, the fields induced by the depletion charges of both region types compensate each other to allowing the doping in both n-regions and p-regions to be very high without causing a reduction of the breakdown voltage. In the onstate the heavy doping ensures the voltage drop is very low and that the saturation current density high. A simple relationship between the specific on-resistance and R_on and the sustaining voltage V_B can be shown to be R_on=2.53 × 10⁻⁷bV_B^1.23 ωcm², where the breadth b (in μm) of each region is much smaller than the thickness W. The design method of the CB-layer is discussed in some detail. The simulation results are shown to be in perfect agreement with the theory. The structure has application to a wide variety of different power devices. An RMOST structure has been used to demonstrate the benefits of the technique in the paper, for which excellent performance is demonstrated.     

动态波前相位的高分辨率测量

动态波前相位信息测量是大气光学，气动光学和激光技术等领域的重要实验手段。提出了一种具有高的时间和空间分辨率以及长的测量持续时间的动态波前相位测量方法。应用Ｈａｒｔｍａｎｎ－Ｓｈａｃｋ波前传感器获得高空间分辨率的相位信息，采用高帧频ＣＣＤ摄象机获得高时间分辨率图象数据。     

GH2027铁基高温合金的第二相研究

运用电子显微分析和波谱分析等方法对ＧＨ２０２７合金的第二相进行了研究，结果表明，合金晶界相主要是片状Ｍ６Ｃ和薄膜状Ｍ２３Ｃ６，经波纹图样测得其错配度约为３％，晶内Ｍ６Ｃ和Ｍ２３