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61.
Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs
Jon Geist Deane Chandler-Horowitz A. M. Robinson C. R. James 《Journal of research of the National Institute of Standards and Technology》1991,96(4):463-469
The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface. 相似文献
62.
J Strother Moore 《Formal Aspects of Computing》1994,6(1):60-91
We present a formal model of asynchronous communication between two digital hardware devices. The model takes the form of a function in the Boyer-Moore logic. The function transforms the signal stream generated by one processor into that consumed by an independently clocked processor, given the phases and rates of the two clocks and the communications delay. The model can be used quantitatively to derive concrete performance bounds on communications at ISO protocol level 1 (physical level). We use the model to show that an 18-bit/cell biphase mark protocol reliably sends messages of arbitrary length between two processors provided the ratio of the clock rates is within 5% of unity. 相似文献
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64.
J. W. Huang J. M. Ryan K. L. Bray T. F. Kuech 《Journal of Electronic Materials》1995,24(11):1539-1546
The defect engineering in metalorganic vapor phase epitaxy InxGa1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has
led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGa1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent
of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on
a series of InxGa1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in
DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction
band and led to a high electron concentration in oxygen doped In0.53Ga0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the
near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation
of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels. 相似文献
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Core–shell type nanoparticles of poly(L ‐lactide)/poly(ethylene glycol) (LE) diblock copolymer were prepared by a dialysis technique. Their size was confirmed as 40–70 nm using photon correlation spectroscopy. The 1H‐NMR analysis confirmed the formation of core–shell type nanoparticles and drug loading. The particle size, drug loading, and drug release rate of the LE nanoparticles were slightly changed by the initial solvents that were used. The drug release behavior of LE core–shell type nanoparticles showed an initial burst during the first 12 h and then a sustained release until 100 h. The degradation behavior of LE block copolymer nanoparticles was divided into three phases: the initial rapid degradation phase, the stationary phase, and the rapid degradation phase until complete degradation. It was suggested that lidocaine release kinetics were predominantly governed by the diffusion mechanism in the initial burst phase and after that by both of the diffusion and degradation mechanisms. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 85: 2625–2634, 2002 相似文献
70.
A. Murua 《Computing》1997,59(1):43-61
A class of half-explicit methods for index 2 differential-algebraic systems in Hessenberg form is proposed, which takes advantage
of the partitioned structure of such problems. For this family of methods, which we call partitioned half-explicit Runge-Kutta
methods, a better choice in the parameters of the method than for previously available half-explicit Runge-Kutta methods can
be made. In particular we construct a family of 6-stage methods of order 5, and determine its parameters (based on the coefficients
of the successful explicit Runge-Kutta method DOPRI5) in order to optimize the local error coefficients. Numerical experiments
demonstrate the efficiency of this method for the solution of constrained multi-body systems. 相似文献