White Electroluminescence by Supramolecular Control of Energy Transfer in Blends of Organic‐Soluble Encapsulated Polyfluorenes

Here, it is demonstrated that energy transfer in a blend of semiconducting polymers can be strongly reduced by non‐covalent encapsulation of one constituent, ensured by threading of the conjugated strands into functionalized cyclodextrins. Such macrocycles control the minimum intermolecular distance of chromophores with similar alignment, at the nanoscale, and therefore the relevant energy transfer rates, thus enabling fabrication of white‐light‐emitting diodes (CIE coordinates: x = 0.282, y = 0.336). In particular, white electroluminescence in a binary blend of a blue‐emitting, organic‐soluble rotaxane based on a polyfluorene derivative and the green‐emitting poly(9,9‐dioctylfluorene‐alt‐benzothiadiazole ( F8BT ) is achieved. Morphological and structural analyses by atomic force microscopy, fluorescence mapping, µ‐Raman, and fluorescence lifetime microscopy are used to complement optical and electroluminescence characterization, and to enable a deeper insight into the properties of the novel blend.     

Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage

The irradiation with high-energy (7.35 MeV) protons through a set of energy degraders was used to suppress leakage of the silicon power diodes subjected to local lifetime control. The aim was to modify the profile of recombination centers and to reduce production of vacancy complexes. The high-energy proton irradiation was compared with standard local lifetime killing by high-energy alphas. Recombination centers arising from irradiation were characterized after irradiation and subsequent annealing at 220 and 350 °C by deep level transient spectroscopy and I-V profiling. Static and dynamic parameters of irradiated diodes were also measured and compared. Results show that the applied irradiation with protons provides 3-10 times lower leakage compared to standard alphas for equivalent reduction of the reverse recovery current maximum. On the other hand, the excessive formation of hydrogen donors at high proton fluences and their diffusion during annealing at 350° decreases diode blocking capability.     

Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation

We present a detailed study of the MOVPE growth of 800 nm diode laser structures based on the combination of a GaAsP quantum well with well-established AlGaAs waveguide structures. By optimizing the strain and thickness of the quantum well highly-reliable diode lasers with low threshold current and high efficiency were demonstrated. 100 μm aperture “broad area” devices mounted epi-side up achieve a CW output power of 8.9 W with a wall-plug efficiency of 50%. These output powers represent record values for diode lasers in this wavelength range. Reliability measurements at 1.5 W and 50°C ambient temperature suggest lifetimes >10 000 h.     

Designing a Stable Cathode with Multiple Layers to Improve the Operational Lifetime of Polymer Light‐Emitting Diodes

The short device lifetime of blue polymer light‐emitting diodes (PLEDs) is still a bottleneck for commercialization of self‐emissive full‐color displays. Since the cathode in the device has a dominant influence on the device lifetime, a systematic design of the cathode structure is necessary. The operational lifetime of blue PLEDs can be greatly improved by introducing a three‐layer (BaF₂/Ca/Al) cathode compared with conventional two‐layer cathodes (BaF₂/Al and Ba/Al). Therefore, the roles of the BaF₂ and Ca layers in terms of electron injection, luminous efficiency, and device lifetime are here investigated. For efficient electron injection, the BaF₂ layer should be deposited to the thickness of at least one monolayer (～3 nm). However, it is found that the device lifetime does not show a strong relation with the electron injection or luminous efficiency. In order to prolong the device lifetime, sufficient reaction between BaF₂ and the overlying Ca layer should take place during the deposition where the thickness of each layer is around that of a monolayer.     

Electroluminescence and Laser Emission of Soluble Pure Red Fluorescent Molecular Glasses Based on Dithienylbenzothiadiazole

Soluble molecular red emitters 1a / 1b are synthesized by Stille coupling from 2‐(3,5‐di(1‐naphthyl)phenyl)thiophene precursors. The compounds show emission maxima at ca. 610 nm in CH₂Cl₂ solution and 620 nm in solid films. Replacing the n‐hexyl substituent by 4‐sec‐butoxyphenyl produces a marked increase of glass transition temperature (T_g) from 82 °C to 137 °C and increases the solubility in toluene and p‐xylene, thus improving the film‐forming properties. Cyclic voltammetry shows that the compounds can be reversibly oxidized and reduced around +1.10 and ?1.20 V, respectively. A two‐layered electroluminescent device based on 1b produces a pure red light emission with CIE coordinates (0.646, 0.350) and a maximal luminous efficiency of 2.1 cd A^?1. Furthermore, when used as a solution‐processed red emitter in optically pumped laser devices, compound 1b successfully produces a lasing emission at ca. 650 nm.     

Deepening Insights into Aggregation Effect of Intermolecular Charge-Transfer Aggregates for Highly Efficient Near-Infrared Non-Doped Organic Light-Emitting Diodes over 780 nm

Though urgently needed, high-efficiency near-infrared (NIR) organic light-emitting diode (OLED) is still rare due to the energy-gap law. Formation of intermolecular charge-transfer aggregates (CTA) with nonadiabatic coupling suppression can decelerate non-radiative decay rates for high-efficiency NIR-OLEDs. However, the aggregation effect of CTA is still not fully understood, which limits the rational design of CTA. Herein, two CTA molecules with a same π-framework but different terminal substituents are developed to unveil the aggregation effect. In highly ordered crystalline states, the terminal substituents substantially affect the molecular packing motifs and intermolecular charge-transfer states, thus leading to distinct photophysical properties. In comparison, in amorphous states, these two CTA demonstrate similar photophysical behaviors and properties due to their similar molecular packing and intermolecular interactions as evidenced by molecular dynamics simulations. Importantly, the formations of amorphous CTA trigger multifunction improvements such as aggregation-induced NIR emission, aggregation-induced thermally activated delayed fluorescence, self-doping and self-host features. The non-doped OLEDs demonstrate NIR emissions centered at 788 and 803 nm, and high maximum external quantum efficiencies of 2.6% and 1.5% with small efficiency roll-off, respectively. This study provides deeper insight into the aggregation effect of CTA and lays a foundation for the development of high-efficiency NIR non-doped OLEDs.     

采用浮空场限制环的耐压10kV碳化硅二极管的开发

The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been used in the fabrication. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The n-type epilayer is 100 μm in thickness with a doping of 6 × 10^14 cm^-3. The on-state voltage was 2.7 V at JF = 13 A/cm^2.     

On the Origin of Green Emission Bands in Fluorene‐Based Conjugated Polymers

Blue‐light‐emitting diodes made of polyfluorenes have low stability and, under operation, rapidly degrade and produce undesirable low‐energy emission bands (green or g‐bands). A spectroelectrochemical study of the degradation process suffered by polyfluorenes is reported here. These polymers lose their electronic properties by electrochemical oxidation and reduction through σ‐bond breaking. In addition, upon electrochemical reduction, the development of a structured green emission band at 485 nm is observed. The position and shape of this band is different from the usual featureless band at 535 nm assigned to fluorenone defects. The green‐light‐emitting product is isolated and analyzed by Fourier‐transform IR spectroscopy; fluorenone formation is excluded. The isolated product is crosslinked; its green emission is probably related to the formation of an intramolecular excimer.     

Photolithographic patterning of PEDOT:PSS with a silver interlayer and its application in organic light emitting diodes

A patterning scheme for poly(3,4-ethylenedioxythio-phene):poly(styrenesulfonate) (PEDOT:PSS) is reported. With a silver interlayer, the conductive PEDOT:PSS film can be patterned down to micrometer scales by traditional photolithography, and this patterning scheme can be applied on large-area flexible substrates. Through systematical investigations, the patterning processes have no obvious influence on both the bulk and surface properties of PEDOT:PSS films. Efficient organic light emitting diodes (OLEDs) are realized based on this patterned PEDOT:PSS anode, and they show comparable performance to those devices with an indium tin oxide (ITO) anode. High-resolution OLED pixel arrays are also demonstrated. Our interlayer approach here has an advantage of patterning PEDOT:PSS with high resolution and large scale, and it is also compatible with traditional photolithographic processes which substantially save the capital cost. Results indicate that the photographically patterned conductive PEDOT:PSS film becomes a promising candidate for eletrical eletrode material in organic electronic applications.