基于LED的光谱可调光源结构研究

介绍了一个由大量LED组合而成的光谱可调光源,通过不同LED的组合产生不同光谱分布,可以模拟各种光源。该光源主要由LED屏体、光谱匹配模块以及LED控制驱动模块构成。LED屏体由2 304个窄带LED组成,通过LED数据分配卡将接收到的显示数据进行分配,并驱动屏体上的LED,以PWM的方式精确控制每一个LED的电流,实现256级及以上灰度等级显示。整个系统经初步调试,已能模拟部分光谱。该光源将具有广泛的应用前景。     

PIN/PAN聚合物基电解质膜的制备及性能

利用静电纺丝技术制备了聚吲哚/聚丙烯腈(PIN/PAN)聚合物基电解质膜,代替纸基铝空气电池中的纤维素纸(C-P),并应用于固态铝空气电池。探究了PIN含量对电解质膜离子电导率及吸液率的影响。采用SEM和FTIR对PIN/PAN聚合物基电解质膜表面形貌及化学组成进行分析。借助电化学工作站和电池测试系统,分析了电解质膜离子电导率及固态铝空气电池放电特性。结果表明,采用PIN/PAN聚合物基电解质膜可有效提升固态铝空气电池性能,在3 mA.cm_^-2、5 mA.cm_^-2、7 mA.cm_^-2电流密度下,放电时长比纸基铝空气电池分别提升了21%、27%、34%,且放电时长与电解质膜的吸液率及离子电导率相关。其中4%PIN/PAN聚合物基电解质膜离子电导率可达6.7×10_^-4 S.cm_^-1,同时对碱性溶液具有良好的吸附能力,吸液率最高可达496%,为纤维素纸的3.2倍。     

Synthesis,characterization, and properties of silicone–epoxy resins

Silicone–epoxy (SiE) resins were synthesized through the hydrolytic condensation of 2‐(3,4‐epoxycyclohexylethyl) methyldiethoxysilane (EMDS) and the cohydrolytic condensation of EMDS with dimethyldiethoxysilane. Structural characterization was carried out by ¹H‐NMR, ²⁹Si‐NMR, and mass spectrometry analysis; the resins were linear oligomers bearing different numbers of pendant epoxy groups, and the average number of repeat Si O units ranged from 6 to 11. Methyhexahydrophthalic anhydride was used to cure the SiE resins to give glassy materials with high optical clarity. The cured SiE resins showed better thermal stability and higher thermal and UV resistances than a commercial light‐emitting diode package material (an epoxy resin named CEL‐2021P). The effect of the epoxy value on the thermal and mechanical properties and the thermal and UV aging performances of the cured SiE resins were investigated. The SiE resins became more flexible with decreasing epoxy value, and the resin with the moderate epoxy value had the highest thermal and UV resistances. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2011     

Effect of rare-earth doping on the electrical and photoelectrical properties of furazano [ 3,4-b] piperazine (FP) thin-film devices

Schottky diodes of rare-earth, praseodymium (Pr)-doped and samarium (Sm)-doped furazano [3,4-b] piperazine (FP), sandwiched between Al and indium-tin oxide (ITO) were made by a spin-coating technique. The diodes, in which doped FP behaves as a p-type organic semiconductor, exhibit rectification behaviour. The p-type semiconductivity and rectification properties of the devices improve with rare-earth doping. The electrical effects observed in these devices are explained in terms of the p-type semiconducting behaviour of the doped FP thin films and the formation of a blocking contact (Schottky barrier) with the Al electrode and ohmic contact with the ITO electrode. Various electrical parameters such as carrier mobility, position of Fermi level, free carrier concentration, trap density, trap level and conductivity of doped FP are calculated and discussed. It is found that the position of the Fermi level shifts toward the valence band on rare-earth doping; concentration of free carriers and carrier mobility increase on doping. From the capacitance-voltage (C-V measurements, various electrical parameters such as barrier height, density of ionized acceptor atoms and depletion layer width are calculated and discussed. From the action spectra and absorption spectra it is confirmed that the Al-doped FP interface forms a Schottky barrier and the ITO-doped FP interface shows ohmic contact. The photovoltaic measurement on the two devices reveals that the short circuit current, open circuit voltage, fill factor and power conversion efficiency increase on rare-earth doping.     

Blue‐light‐emitting poly(arylene ethynylenes) containing alternating sequences of biphenylene or fluorenediyl and p‐phenylene moieties linked through triple bonds

Two new poly(arylene ethynylenes) were synthesized by the reaction of 1,4‐diethynyl‐2.5‐dioctylbenzene either with 4,4′‐diiodo‐3,3′‐dimethyl‐1,1′‐biphenyl or 2,7‐diiodo‐9,9‐dioctylfluorene via the Sonogashira reaction, and their photoluminescence (PL) and electroluminescence (EL) properties were studied. The new poly(arylene ethynylenes) were poly[(3,3′‐dimethyl‐1,1′‐biphenyl‐4,4′‐diyl)‐1,2‐ethynediyl‐(2,5‐dioctyl‐1,4‐phenylene)‐1,2‐ethynediyl] (PPEBE) and poly[(9,9‐dioctylfluorene‐2,7‐diyl)‐1,2‐ethynediyl‐(2,5‐dioctyl‐1,4‐phenylene)‐1,2‐ethynediyl] (PPEFE), both of which were blue‐light emitters. PPEBE not only emitted better blue light than PPEFE, but it also performed better in EL than the latter when the light‐emitting diode devices were constructed with the configuration indium–tin oxide/poly(3,4‐ethylenedioxythiophene) doped with poly(styrenesulfonic acid) (50 nm)/polymer (80 nm)/Ca:Al. The device constructed with PPEBE exhibited an external quantum efficiency of 0.29 cd/A and a maximum brightness of about 560 cd/m², with its EL spectrum showing emitting light maxima at λ = 445 and 472 nm. The device with PPEFE exhibited an efficiency of 0.10 cd/A and a maximum brightness of about 270 cd/m², with its EL spectrum showing an emitting light maximum at λ = 473 nm. Hole mobility (μ_h) and electron mobility (μ_e) of the polymers were determined by the time‐of‐flight method. Both polymers showed faster μ_h values. PPEBE revealed a μ_h of 2.0 × 10^?4 cm²/V·s at an electric field of 1.9 × 10⁵ V/cm and a μ_e of 7.0 × 10^?5 cm²/V·s at an electric field of 1.9 × 10⁵ V/cm. In contrast, the mobilities of the both carriers were slower for PPEFE, and its μ_h (8.0 × 10^?6 cm²/V·s at an electric field of 1.7 × 10⁶ V/cm) was 120 times its μ_e (6.5 × 10^?8 cm²/V·s at an electric field of 8.6 × 10⁵ V/cm). The much better balance in the carriers' mobilities appeared to be the major reason for the better device performance of PPEBE than PPEFE. Their highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels were also a little different from each other. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 100: 299–306, 2006     

A reddish orange stoichiometric phosphor LiEu(PO3)4 for white light-emitting diodes

Stoichiometric phosphors LiGd_1−xEu_x(PO₃)₄(x=0, 0.2, 0.4, 0.6, 0.8, 1.0) were synthesized via traditional solid state reactions. The X-ray powder diffraction measurements show that all prepared samples are isostructural with LiNd(PO₃)₄. Eu³⁺ doped phosphors can emit intense reddish orange light under the excitation of near ultraviolet light from 370 to 410 nm. The strongest two at 591 and 613 nm can be attributed to the transitions from excited state ⁵D₀ to ground states ⁷F₁ and ⁷F₂, respectively. The typical chromaticity coordinates (x=0.620, y=0.368) of Eu³⁺ doped phosphors are in red area. The recorded absorbance spectra indicate that there is effective absorbance in the near UV region for all Eu³⁺ doped samples. Present research indicates that LiGd_1–xEu_x(PO₃)₄ is a promising phosphor for white light-emitting diodes.     

新型硅激光器系统的优化设计

通过在硅波导上添加反向偏压的PIN结构,建立了完整的全硅激光器系统.该系统包括半导体泵浦光源和硅波导放大器.建立的硅激光器增益模型,与已知的实验结果达到了很好的一致,并给出了泵浦光源输出波形和硅激光器的输出波形.该系统可以集成在很小的CMOS器件上,实现光电子器件的集成化,有着广泛的应用前景.     

Influences of Connecting Unit Architecture on the Performance of Tandem Organic Light‐Emitting Devices

The present work investigates the influence of the n‐type layer in the connecting unit on the performance of tandem organic light‐emitting devices (OLEDs). The n‐type layer is typically an organic electron‐transporting layer doped with reactive metals. By systematically varying the metal dopants and the electron‐transporting hosts, we have identified the important factors affecting the performance of the tandem OLEDs. Contrary to common belief, device characteristics were found to be insensitive to metal work functions, as supported by the ultraviolet photoemission spectroscopy results that the lowest unoccupied molecular orbitals of all metal‐doped n‐type layers studied here have similar energy levels. It suggests that the electron injection barriers from the connecting units are not sensitive to the metal dopant used. On the other hand, it was found that performance of the n‐type layers depends on their electrical conductivities which can be improved by using an electron‐transporting host with higher electron mobility. This effect is further modulated by the optical transparency of constituent organic layers. The efficiency of tandem OLEDs would decrease as the optical transmittance decreases.     

Stoichiometry Control for the Tuning of Grain Passivation and Domain Distribution in Green Quasi‐2D Metal Halide Perovskite Films and Light‐Emitting Diodes

Quasi‐2D metal halide perovskite films are promising for efficient light‐emitting diodes (LEDs), because of their efficient radiative recombination and suppressed trap‐assisted quenching compared with pure 3D perovskites. However, because of the multidomain polycrystalline nature of solution‐processed quasi‐2D perovskite films, the composition engineering always impacts the emitting properties with complicated mechanisms. Here, defect passivation and domain distribution of quasi‐2D perovskite films prepared with various precursor compositions are systematically studied. As a result, in perovskite films prepared from stoichiometric quasi‐2D precursor compositions, large organic ammonium cations function well as passivators. In comparison, precursor compositions of simply adding large organic halide salt into a 3D perovskite precursor ensure not only the defect passivation but also the effective formation of quasi‐2D perovskite domains, avoiding unfavorable appearance of low‐order domains. Quasi‐2D perovskite films fabricated with a well‐designed precursor composition achieve a high photoluminescence quantum yield of 95.3% and an external quantum efficiency of 14.7% in LEDs.     

Efficient single layer RGB phosphorescent organic light-emitting diodes

We report efficient single layer red, green, and blue (RGB) phosphorescent organic light-emitting diodes (OLEDs) using a “direct hole injection into and transport on triplet dopant” strategy. In particular, red dopant tris(1-phenylisoquinoline)iridium [Ir(piq)₃], green dopant tris(2-phenylpyridine)iridium [Ir(ppy)₃], and blue dopant bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium [FIrpic] were doped into an electron transporting 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) host, respectively, to fabricate RGB single layer devices with indium tin oxide (ITO) anode and LiF/Al cathode. It is found that the maximum current efficiencies of the devices are 3.7, 34.5, and 6.8 cd/A, respectively. Moreover, by inserting a pure dopant buffer layer between the ITO anode and the emission layer, the efficiencies are improved to 4.9, 43.3, and 9.8 cd/A, respectively. It is worth noting that the current efficiency of the green simplified device was as high as 34.6 cd/A, even when the luminance was increased to 1000 cd/m² at an extremely low applied voltage of only 4.3 V. A simple accelerated aging test on the green device also shows the lifetime decay of the simplified device is better than that of a traditional multilayered one.