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131.
132.
对典型量子阱激光器的光束特性和光纤特性进行了简要分析,在此基础上,利用光线踪迹理论,对光纤激光器所用976 nm泵浦模块的耦合光路进行设计,并采用光学设计软件Tracepro对设计的光路进行模拟。通过对C-mount封装的单管进行耦合试验,测得90μm条宽激光器耦合到105μm芯径时,数值孔径NA=0.22楔形光纤(未镀增透膜)的耦合效率可高达92%;100μm条宽激光器耦合到105μm芯径时,NA=0.22楔形光纤(未镀增透膜)的耦合效率可达80%以上。将测量得到的结果和理论的模拟结果进行比较,分析了影响耦合效率的原因。 相似文献
133.
Achieving High‐Performance Nondoped OLEDs with Extremely Small Efficiency Roll‐Off by Combining Aggregation‐Induced Emission and Thermally Activated Delayed Fluorescence
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Jingjing Guo Xiang‐Long Li Han Nie Wenwen Luo Shifeng Gan Shimin Hu Rongrong Hu Anjun Qin Zujin Zhao Shi‐Jian Su Ben Zhong Tang 《Advanced functional materials》2017,27(13)
Luminescent materials with thermally activated delayed fluorescence (TADF) can harvest singlet and triplet excitons to afford high electroluminescence (EL) efficiencies for organic light‐emitting diodes (OLEDs). However, TADF emitters generally have to be dispersed into host matrices to suppress emission quenching and/or exciton annihilation, and most doped OLEDs of TADF emitters encounter a thorny problem of swift efficiency roll‐off as luminance increases. To address this issue, in this study, a new tailor‐made luminogen (dibenzothiophene‐benzoyl‐9,9‐dimethyl‐9,10‐dihydroacridine, DBT‐BZ‐DMAC) with an unsymmetrical structure is synthesized and investigated by crystallography, theoretical calculation, spectroscopies, etc. It shows aggregation‐induced emission, prominent TADF, and interesting mechanoluminescence property. Doped OLEDs of DBT‐BZ‐DMAC show high peak current and external quantum efficiencies of up to 51.7 cd A?1 and 17.9%, respectively, but the efficiency roll‐off is large at high luminance. High‐performance nondoped OLED is also achieved with neat film of DBT‐BZ‐DMAC, providing excellent maxima EL efficiencies of 43.3 cd A?1 and 14.2%, negligible current efficiency roll‐off of 0.46%, and external quantum efficiency roll‐off approaching null from peak values to those at 1000 cd m?2. To the best of the authors' knowledge, this is one of the most efficient nondoped TADF OLEDs with small efficiency roll‐off reported so far. 相似文献
134.
Facile Two‐Step Synthesis of All‐Inorganic Perovskite CsPbX3 (X = Cl,Br, and I) Zeolite‐Y Composite Phosphors for Potential Backlight Display Application
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Jia‐Yi Sun Freddy T. Rabouw Xian‐Feng Yang Xie‐Yi Huang Xi‐Ping Jing Shi Ye Qin‐Yuan Zhang 《Advanced functional materials》2017,27(45)
Recently developed CsPbX3 (X = Cl, Br, and I) perovskite quantum dots (QDs) hold great potential for various applications owing to their superior optical properties, such as tunable emissions, high quantum efficiency, and narrow linewidths. However, poor stability under ambient conditions and spontaneous ion exchange among QDs hinder their application, for example, as phosphors in white‐light‐emitting diodes (WLEDs). Here, a facile two‐step synthesis procedure is reported for luminescent and color‐tunable CsPbX3–zeolite‐Y composite phosphors, where perovskite QDs are encapsulated in the porous zeolite matrix. First zeolite‐Y is infused with Cs+ ions by ion exchange from an aqueous solution and then forms CsPbX3 QDs by diffusion and reaction with an organic solution of PbX2. The zeolite encapsulation reduces degradation and improves the stability of the QDs under strong illumination. A WLED is fabricated using the resulting microscale composites, with Commission Internationale de I'Eclairage (CIE) color coordinates (0.38, 0.37) and achieving 114% of National Television Standards Committee (NTSC) and 85% of the ITU‐R Recommendation BT.2020 (Rec.2020) coverage. 相似文献
135.
针对星间光通信系统的要求,采用一种新型的半导体激光耦合方案,用前后正交的非球面柱面透镜准直半导体激光束,再经渐变折射率(graduated refractive index,GR IN)自聚焦透镜聚焦,把光束耦合入单模光纤。就此耦合单元,对耦合效率随半导体激光器的位置偏离及角度偏移进行了研究,在光纤尾纤处测得了输出功率随驱动电流的变化关系,单模运行的半导体激光二极管经耦合后的出纤功率可以达到80mW。结果表明,耦合效率随位置偏离及角度偏移的变化灵敏度都不高,这可以满足星间光通信的要求。 相似文献
136.
137.
将N,N'-bis-(1-naphthy1)-N,N'-dipheny-1,1'bipheny1 4,4'-diamine(NPB)与bathocuproine(BCP)2种材料以交叠沉积方式组成一种周期性结构作为空穴注入层,制备了结构为ITO/[NPB/BCP]n/AlQ/LiF/Al的有机电致发光器件(OLED).通过改变空穴注入层阱状结构的重复周期数n,可改变载流子复合区域,进而获得近白光和绿光发射.由于该结构能获得更好的载流子注入平衡,具有交叠结构空穴注入层的近白光器件在15 V时亮度达到3 433.8 cd/m2,在电流密度为60.9 mA/cm2时最大发光效率为2.26 cd/A.当周期数n大于3时得到绿光发射,与单空穴注入层ITO/NPB/AlQ/LiF/Al器件相比,交叠空穴注入层可将器件的最大亮度由2 512.8 cd/m2提高到866 1.0 cd/m2,最大亮度效率在20 mA/cm2时达到4.94 cd/A. 相似文献
138.
The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been used in the fabrication. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The n-type epilayer is 100 μm in thickness with a doping of 6 × 10^14 cm^-3. The on-state voltage was 2.7 V at JF = 13 A/cm^2. 相似文献
139.
Yong Sub Shim Ju Hyun Hwang Hyun Jun Lee Kyung Bok Choi Kyu Nyun Kim Cheol Hwee Park Sun‐Gyu Jung Young Wook Park Byeong‐Kwon Ju 《Advanced functional materials》2014,24(41):6414-6421
In this study, organic light‐emitting diodes (OLEDs) with enhanced optical properties are fabricated by inserting a nanosized stripe auxiliary electrode layer (nSAEL) between the substrate and an indium tin oxide (ITO) layer. This design can avoid the shortcomings of conventional microsized layers while maintaining high optical uniformity due to the improved conductivity of the electrode. The primary advantage is that the nSAEL (submicrometer scale) is no longer visible to the naked eye. Moreover, the reflective shuttered (grating) structure of the nSAEL increases the forward‐directed light by the microcavity (MC) effect and minimizes the loss of light by the extracting the surface plasmon polariton (SPP) mode. In this study, the degree of the MC and SPP can be controlled with the parameters of the nSAEL by simply conjugating the conditions of laser interference lithography (LIL). Therefore, the current and power efficiencies of the device with an nSAEL with optimized parameters are 1.17 and 1.23 times higher than the reference device at 1000 cd/m2, respectively, and at these parameters, the overall sheet resistance is reduced to less than half (48%). All of the processes are verified by comparing the computational simulation results and the experimental results obtained with the actual fabricated device. 相似文献
140.
A universal low optimum doping concentration of below 5% was demonstrated in phosphorescent organic light-emitting diodes (PHOLEDs) by managing the energy levels of charge transport materials. The device performances of PHOLEDs could be optimized at a low doping concentration of 3% irrespective of the host material in the emitting layer. The suppression of charge trapping and hopping by the dopant through charge transport layer engineering optimized the device performance at low doping concentration. In addition, it was revealed that PHOLEDs with low optimum doping concentration show better quantum efficiency, low efficiency roll-off and low doping concentration dependency of the device performance. 相似文献