LED封装用透明环氧树脂的改性

选用不同种类的光稳定剂对发光二极管(LED)封装用透明环氧树脂进行改性,研究了光稳定剂对环氧树脂透光率和耐紫外线老化性能的影响。所选用的光稳定剂与环氧树脂都具有良好的相容性.采用苯并三唑类光稳定剂UV-329改性环氧树脂和受阻胺类光稳定剂HS-508改性环氧树脂封装的LED比采用普通环氧树脂EP-400封装的LED寿命分别提高59%和73%。HS-508与UV-329共同使用具有协同作用,采用最优条件改性环氧树脂封装的LED的寿命比用EP-400封装的LED提高了170%。     

A low‐profile antenna with circularly polarized reconfigurable and omnidirectional radiation patterns

A low profile circularly polarized (CP) antenna with reconfigurable polarization is designed and presented, which can radiate omnidirectional patterns that can be switched between left‐hand circularly polarized (LHCP) and right‐hand circularly polarized (RHCP). A pair of arc‐shaped complementary dipoles is acted as reconfigurable elements by bridging four pin diodes at the dipole arced arms. A meander phase shift line is employed to connected the arc dipole arms and plate cavity to adjust the phase relationship of two sources. The proposed antenna exhibits the omnidirectional radiation pattern by combining six identical elements placed in a circular array configuration. 24 p‐i‐n diodes are exploited to six elements, by manipulating the dc bias voltage across the diodes, the polarization state of the antenna can be switched. The patterns of the antenna are similar to that of a dipole, but its size is only about Φ0.87 × 0.029λ₀ at 5.8 GHz. The overlapped bandwidth of measured 3‐dB axial ratio (AR) and 10‐dB return loss is 5.724‐5.87 and 5.738‐5.91 GHz for two polarization states, which are right on the target of ISM band. It can be well adapted to medical diagnosis systems.     

频率与方向图可重构锯齿偶极子微带天线的设计

为了满足无线通信高速数据需求和微带天线的小型化,设计了一种频率和方向图可重构锯齿偶极子微带天线,该天线包括2个锯齿状振子,分别印制在介质板的两面。通过改变锯齿振子上PIN二极管的工作状态,使天线的局部结构和表面电流分布发生变化,实现天线频率和方向图的可重构。实验结果表明,该天线在1.88～2.85GHz频段内实现可重构的功能,覆盖了主要的无线通信频带。在工作频段内,天线的H面方向图具有全向特性,E面方向图实现了波束扫描。     

Some observations from interrupted lifetest of GaInAsP/InP inverted-rib laser diodes

Conventionally, lifetests of semiconductor laser diodes usually involved operating the devices continuously at either constant power output or drive current, with periodic recording of their characteristics. In this paper, some effects arising from interrupted lifetest of 1.3 m GaInAsP-InP inverted-rib laser diodes are reported. This unconventional lifetest method involves constant power biasing at 4 mW/facet and 8 mW/facet respectively at 50°C, followed by a period during which the lifetest is interrupted and the devices left unbiased at room temperature. Subsequently, the devices were put back on constant power biasing at 50°C. Among a number of parameters, pronounced reduction in the threshold current, current for 4 mW/facet and 8 mW/facet were observed, indicating strong recovery effects commencing from the time when the life-test was interrupted. Redistribution of mobile defects in the cladding layer is postulated to be the cause of the degradation recovery, and the data supports the occurrence of an aging-current dependent defect annihilation mechanism. Such recovery effects have so far been observed to occur only in the GaInAsP-InP inverted-rib devices.     

Ultraefficient Non-Doped Deep Blue Fluorescent OLED: Achieving a High EQE of 10.17% at 1000 cd m−2 with CIEy<0.08

The pursuit for efficient deep blue material is an ever-increasing issue in organic optoelectronics field. It is a long-standing challenge to achieve high external quantum efficiency (EQE) exceed 10% at brightness of 1000 cd m⁻² with a Commission International de L'Eclairage (CIE_y) <0.08 in non-doped organic light-emitting diodes (OLEDs). Herein, this study reports a deep blue luminogen, PPITPh, by bonding phenanthro[9,10-d]imidazole moiety with m-terphenyl group via benzene bridge. The non-doped OLED based on PPITPh exhibits an exceptionally high EQE of 11.83% with a CIE coordinate of (0.15, 0.07). The EQE still maintains 10.17% at the brightness of 1000 cd m⁻², and even at a brightness as high as 10000 cd m⁻², an EQE of 7.5% is still remained, representing the record-high result among non-doped deep-blue OLEDs at 1000 cd m⁻². The unprecedented device performance is attributed to the reversed intersystem crossing process through hot exciton mechanism. Besides, the maximum EQE of orange phosphorescent OLED with PPITPh as host is 32.02%, and remains 31.17% at the brightness of 1000 cd m⁻². Such minimal efficiency roll-off demonstrates that PPITPh is also an excellent phosphorescent host material. The result offers a new design strategy for the enrichment of high-efficiency deep blue luminogen.     

Paving the Way for High-Performance UVB-LEDs Through Substrate-Dominated Strain-Modulation

AlGaN-based ultraviolet-B light-emitting diodes (UVB-LEDs) exhibit great potential in phototherapy, vitamin D3 synthesis promotion, plant growth regulation, and so on. However, subjected to the excess compressive strain induced by the large lattice mismatch between multiple quantum wells (MQWs) and AlN, UVB-LEDs that simultaneously satisfy the requirements of high light output power (LOP), low working voltage, and excellent stability are rarely reported. Here, a substrate-dominated strain-modulation strategy is proposed. By precisely manipulating the strain in AlN grown on nano-patterned sapphire substrate (NPSS) to a slightly tensile one, the compressive strain in the following Al_0.55Ga_0.45N underlayer and Al_0.28Ga_0.72N/Al_0.45Ga_0.55N MQWs is successfully suppressed. As a result, an outstanding UVB-LED with a peak wavelength at 303.6 nm is achieved. The 20 × 20 mil² UVB-LED chip shows a wall-plug efficiency (WPE) of 3.27% under a forward current of 20 mA and a high LOP of 57.2 mW with an extremely low voltage of 5.87 V under a forward current of 800 mA. It is more exciting that the LOP degradation is as low as 17% after 1000 h operation under a forward current density of 75 A cm⁻², showing excellent stability. The here-developed UVB-LED, with a high LOP and excellent reliability, will definitely promote the applications of AlGaN-based UVB-LEDs.     

Highly Efficient Quasi 2D Blue Perovskite Electroluminescence Leveraging a Dual Ligand Composition

Perovskite light-emitting diodes (PeLEDs) are advancing because of their superior external quantum efficiencies (EQEs) and color purity. Still, additional work is needed for blue PeLEDs to achieve the same benchmarks as the other visible colors. This study demonstrates an extremely efficient blue PeLED with a 488 nm peak emission, a maximum luminance of 8600 cd m⁻², and a maximum EQE of 12.2% by incorporating the double-sided ethane-1,2-diammonium bromide (EDBr₂) ligand salt along with the long-chain ligand methylphenylammonium chloride (MeCl). The EDBr₂ successfully improves the interaction between 2D perovskite layers by reducing the weak van der Waals interaction and creating a Dion–Jacobson (DJ) structure. Whereas the pristine sample (without EDBr₂) is inhibited by small stacking number (n) 2D phases with nonradiative recombination regions that diminish the PeLED performance, adding EDBr₂ successfully enables better energy transfer from small n phases to larger n phases. As evidenced by photoluminescence (PL), scanning electron microscopy (SEM), and atomic force microscopy (AFM) characterization, EDBr₂ improves the morphology by reduction of pinholes and passivation of defects, subsequently improving the efficiencies and operational lifetimes of quasi-2D blue PeLEDs.     

Modulating Backbone Conjugation of Polymeric Thermally Activated Delayed Fluorescence Emitters for High-Efficiency Blue OLEDs

Blue conjugated polymers-based OLEDs with both high efficiency and low efficiency roll-off are under big challenge. Herein, a strategy of local conjugation is proposed to construct high-efficiency blue-emitting conjugated polymers, in which the conjugation degree of polymeric backbones is adjusted by inserting different spacers. In this way, the energy level of triplet state and the energy transfer direction of the polymeric main-chains can be effectively regulated. Benefiting from such fine regulation, the prepared alternative copolymers Alt-PB36 with local conjugated main-chains can better suppress the accumulation of long-lived triplet excitons comparing with the complete conjugated polymers. The higher PLQY of Alt-PB36 also verifies the effective energy transfer from the polymeric main-chains to the TADF units. Accordingly, Alt-PB36 based solution-processed OLEDs achieve an EQE_max of 11.6% and a very low efficiency roll-off of 2.8% at 100 cd m⁻² and 15.2% at 500 cd m⁻². This result represents the best efficiency among blue light-emitting conjugated polymer-based OLEDs so far under high luminance.