Novel spiro-based host materials for application in blue and white phosphorescent organic light-emitting diodes

Two novel spiro-based host materials, namely 3-(9,9′-spirobi[fluoren]-6-yl)-9-phenyl-9H-carbazole (SF3Cz1) and 9-(3-(9,9′-spirobi[fluoren]-6-yl)phenyl)-9H-carbazole (SF3Cz2) were designed and synthesized. Due to the meta-linkage of spirobifluorene backbone, both SF3Cz1 and SF3Cz2 possess triplet energies over 2.70 eV, indicating they could serve as suitable hosts for blue and even white phosphorescent organic light-emitting diodes (PHOLEDs). The fabricated bis(4,6-(difluorophenyl)-pyridinato -N,C′)picolinate (FIrpic) based PHOLEDs hosted by SF3Cz1 and SF3Cz2 exhibited excellent performance with maximum external quantum efficiencies (EQEs) of 18.1% and 19.7%, respectively. Two-color warm white PHOLEDs fabricated by utilizing SF3Cz1 and SF3Cz2 as hosts also achieved high EQEs and low efficiency roll-offs. The results demonstrate that SF3Cz1 and SF3Cz2 are promising hosts for blue and white PHOLEDs.     

Investigation of light output performance for gallium nitride-based light-emitting diodes grown on different shapes of patterned sapphire substrate

GaN-based blue light-emitting diodes (LEDs) on various patterned sapphire substrates (PSSs) are investigated in detail. Hemispherical and triangular pyramidal PSSs have been applied to improve the performance of LEDs compared with conventional LEDs grown on planar sapphire substrate. The structural, electrical, and optical properties of these LEDs are investigated. The leakage current is related to the crystalline quality of epitaxial GaN films, and it is improved by using the PSS technique. The light output power and emission efficiency of the LED grown on triangular pyramidal PSS with optimized fill factor show the best performance in all the samples, which indicates that the pattern structure and fill factor of the PSS are related to the capability of light extraction.     

Enhancing light-extraction efficiency of OLEDs with high- and low-refractive-index organic–inorganic hybrid materials

High- and low-refractive-index hybrid materials were prepared by an in situ acid-free sol–gel process for internal and external light-extraction layers in organic light-emitting diodes (OLEDs). A random copolymer of methyl methacrylate (MMA) and 3-(trimethoxysilyl) propyl methacrylate (MSMA), poly(MMA-co-MSMA), which was capped with trialkoxysilane in MSMA units, was used as a precursor. The precursor was further reacted with titanium(IV) isopropoxide (TTIP) and tetraethyl orthosilicate (TEOS) to synthesize the high- and low-refractive-index hybrid materials, respectively, in which TiO₂ and SiO₂ nanoparticles were well dispersed, respectively, in the polymer matrix. After the reactions with TTIP and TEOS, the refractive index increased to 1.81 and decreased to 1.44 from 1.50 of the precursor, respectively. The luminance, power, and current efficiency of the OLED with an external light-extraction layer were enhanced by 21.3, 28.6, and 29.1%, respectively, those of the OLED with an internal light-extraction layer were increased by 62.4, 76.9, and 59.2%, respectively, and those of the device with combined ELEL and ILEL were enhanced by 62.7, 77.2, and 59.3%, respectively, when compared to values for the reference OLED without an internal or external light-extraction layer. These results indicate that high- and low-refractive-index materials are desirable for enhancement in light-extraction efficiency, and they can provide practical solutions for various applications such as OLED displays and lighting.     

Triarylphosphine oxide–phenanthroline molecular conjugate as a promising doped electron-transport layer for organic light-emitting diodes

Over the past three decades, transparent high electron mobility molecular materials have attracted intensive research efforts for organic light-emitting diodes as electron-transport layer for the sake of low working voltage, high power efficiency and operational stability. However, developing high-performing electron-transport materials presents a demanding challenge owing to difficulties in synthesis, purification and/or processing. In this contribution, we show that n-doping a simple and facilely available phenanthroline derivative, namely 3-(6-diphenylphosphinylnaphth-2-yl)-1,10-phenanthroline Phen-NaDPO with a high T_g of 116 °C, is capable of greatly increasing the electron conductivity up to 3.3 × 10⁻⁴ S m⁻¹. The characterization of the blue sky fluorescent and green phosphorescent OLEDs involving this doped electron-transport layer Phen-NaDPO:50% wt Cs₂CO₃ revealed comparable performances to the analogue BPhen (T_g ≈ 66 °C) OLEDs. For instance, the resulting sky blue fluorescent OLEDs provided ca. 15 cd/A, 13 lm/W @1000 cd m⁻² & t₉₅ ≈ 167 h @1000 cd m⁻². The present finding shows that the doped Phen-NaDPO may be a robust electron-transport material for optoelectronics.     

Band alignment in organic light emitting diodes - On the track of thickness dependent onset voltage shifts

In this paper we report on an unclear effect in the IV characteristics of organic light emitting diodes (OLEDs). When the thickness of the emitter layer based on a modified phenyl carbozole triplet host material (TH) in the device is increased, a significant shift of the onset voltage to higher values can be noticed. The voltage shift is not observed if the TH is substituted by an isomer with only minor variation of the molecular structure. In a previous publication we could already show that an electric interface field is necessary to describe the onset voltage behaviour. To find the origin of this interface field in the present publication the two isomers are characterized and the band alignment at the interfaces to the emitter layer is investigated using photoelectron spectroscopy. The interface energy diagrams have been measured on stepwise prepared model interfaces. A further simplification of the bipolar to a hole only device stack proofs, that band bending at the hole injecting interface to the TH layer is the origin of the interface field. In contrast an entire flat band situation is measured in case of the device using the other isomer showing no onset voltage shift.     

Improved performance of lateral GaN-based light emitting diodes with novel buried CBL structure in ITO film and reflective electrodes

In this letter, lateral GaN-based Light Emitting Diodes (LEDs) with a SiO₂ current blocking layer (CBL) buried in the indium tin oxide (ITO) film and highly reflective metal materials have been proposed. Compared with the conventional CBL structure which was inserted between ITO film and p-type GaN, simulation results showed that LEDs with a buried CBL in the ITO film effectively facilitated current spreading under the CBL. We demonstrated that buried CBL was beneficial for suppressing current crowding (CC) effect around the edge of CBL and may facilitate higher LED efficiency. Furthermore, experimental results showed that LEDs with the buried structure we proposed showed lower working voltage and higher light output power (LOP) compared with those with conventional CBL structure. These results further confirmed that the buried CBL scheme was effective to reduce current crowding (CC) effect. In addition, highly reflective metal materials of Cr/Al/Pt/Au were employed to reduce light absorption and achieve high light extraction efficiency.     

Recent Advances in Solution-Processed White Organic Light-Emitting Materials and Devices

Solution-processed white organic light-emitting diodes (WOLEDs) have drawn great attention both in the academic and industrial research communities due to the potential application in low-cost, large-area, solid-state lightings. Issues related to the device efficiencies are largely hampering progress in this field. Alongside the development of new materials and novel device architectures, distinct progress has been made for such white devices. In particular, the all-phosphorescent light-emitting strategy has been intensively developed in recent years, mainly focusing on a host guest, doping-system-based, single-active-layer structure and a solution-processed, multilayer device structure. Novel approaches, including white single polymers and excimer-/exciplex-based white devices, have also appeared as a promising choice and received great attention. As a prerequisite, the issue of the morphology of the emissive layer is also important and has an influence on the optoelectronic behavior of the device. Herein, major advances in solution-processed WOLEDs based on polymers, dendrimers, or solution-processed small molecules are summarized. Special attention is focused on the main progress in high-efficiency, solution-processed WOLEDs with the key strategies mentioned above and the morphology issue in these systems. The remaining challenges in pursuing the development of reliable and energy-saving lighting devices are also discussed.     

番茄PIN基因家族的生物信息学分析及其表达模式

PIN蛋白是生长素输出蛋白,具有多个跨膜结构域,能够介导生长素在整个植物体内的流动。番茄作为一种具有重要经济价值的果蔬,对其生长发育调控的研究具有重要的意义。研究表明,PIN蛋白对植物果实的生长发育起着重要的调控作用。本研究通过生物信息学的方法对番茄PIN基因组中10个SlPINs的核酸和氨基酸序列进行分析,构建番茄Sl PINs的进化树,并分析番茄SlPINs在不同组织和果实生长发育过程中的表达量变化,为进一步研究SlPINs的生物学功能提供理论依据。