PPC和PFS联用去除水源水中Tl和Sb复合污染

为了去除地表水源水加标模拟的重金属铊(Tl)和锑(Sb)复合污染,采用了高锰酸盐复合药剂(PPC)和聚合硫酸铁(PFS)联用强化常规工艺;通过静态烧杯实验和微型移动式平台优化工艺参数,对去除铊和锑复合污染的影响因素(PPC投量、PFS投量和pH)进行分析.实验结果表明,组合工艺可保证水源水在Tl超标2～3倍(0.21 ～0.35 μg·L-1),Sb超标3～4倍(15 ～20 μμg·L-1)的场合出水达标,对应的工艺参数是:pH控制在5.7 ～6.3,PPC投量控制在3mg·L-1以上,聚铁投量控制在40 mg·L-1以上.PPC和PFS联用强化常规工艺可有效去除地表水源水加标模拟的铊(Tl)和锑(Sb)复合污染,并且PPC投量是影响Tl去除的主要因素,PFS投量和pH是影响Sb去除的主要因素.     

锑炉渣玻璃陶瓷的研究

本文研究了锑炉渣玻璃陶瓷的组成、热处理工艺对其微晶化过程、结构与性能的影响，论述了Cr2O3、ZrO2、P2O5及TiO2四种氧化物晶核剂的微晶化作用机理，并测定了所研制的锑炉渣玻璃陶瓷的主要性能。研究表明，TiO2为该玻璃陶瓷的最有效的晶核剂。当添加10％时，按本研究确定的原始玻璃配方及热处理工艺获得了一种熔制温度为1360～1380℃、易实现微晶化且材料性能好的锑炉渣玻璃陶瓷。该材料以硅灰石、榍石及钙斜长石为主晶相，配料中锑炉渣的用量高於50％。     

基板温度对SnO2:Sb薄膜结构和性能的影响

以单丁基三氯化锡(MBTC)和 SbCl3 为反应原料,采用常压化学气相沉积法(APCVD 法)在不同的基板温度下制备 Sb 掺杂 SnO2 薄膜,用 XRD、SEM表征了薄膜的结构和形貌,通过测量薄膜的方块电阻、载流子浓度、霍尔(Hall)系数、紫外可见光谱等性质,详细研究了基板温度对薄膜结构和光电性能的影响。实验表明 550℃以上制备的样品为多晶薄膜,并保持四方相金红石型结构;在 650℃下沉积的薄膜具有最低的方块电阻值,为 72Ω/□;在可见光区域薄膜透射率和反射率随着基板温度的提高均有所下降。     

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional changes associated with the process of simultaneous Sb and N incorporation. In the present work, we have characterized using transmission electron microscopy techniques the effects of adding N in the GaAsSb/InAs/GaAs QD system. Firstly, strain maps of the regions away from the InAs QDs had revealed a huge reduction of the strain fields with the N incorporation but a higher inhomogeneity, which points to a composition modulation enhancement with the presence of Sb-rich and Sb-poor regions in the range of a few nanometers. On the other hand, the average strain in the QDs and surroundings is also similar in both cases. It could be explained by the accumulation of Sb above the QDs, compensating the tensile strain induced by the N incorporation together with an In-Ga intermixing inhibition. Indeed, compositional maps of column resolution from aberration-corrected Z-contrast images confirmed that the addition of N enhances the preferential deposition of Sb above the InAs QD, giving rise to an undulation of the growth front. As an outcome, the strong redshift in the photoluminescence spectrum of the GaAsSbN sample cannot be attributed only to the N-related reduction of the conduction band offset but also to an enhancement of the effect of Sb on the QD band structure.     

石墨炉原子吸收光谱法测定P91钢中Sb的含量

介绍了采用石墨炉原子吸收光谱法测定P91钢中Sb的含量。试样以盐酸、硝酸和高氯酸溶解,通过高氯酸冒烟除去氯化物。将试液移入石墨管中原子化,用Sb无极放电灯作光源,用原子吸收光谱仪于Sb217.6nm波长处测量其吸光度。     

Atomistic Origin of the Enhanced Crystallization Speed and n‐Type Conductivity in Bi‐doped Ge‐Sb‐Te Phase‐Change Materials

Phase‐change alloys are the functional materials at the heart of an emerging digital‐storage technology. The GeTe‐Sb₂Te₃ pseudo‐binary systems, in particular the composition Ge₂Sb₂Te₅ (GST), are one of a handful of materials which meet the unique requirements of a stable amorphous phase, rapid amorphous‐to‐crystalline phase transition, and significant contrasts in optical and electrical properties between material states. The properties of GST can be optimized by doping with p‐block elements, of which Bi has interesting effects on the crystallization kinetics and electrical properties. A comprehensive simulational study of Bi‐doped GST is carried out, looking at trends in behavior and properties as a function of dopant concentration. The results reveal how Bi integrates into the host matrix, and provide insight into its enhancement of the crystallization speed. A straightforward explanation is proposed for the reversal of the charge‐carrier sign beyond a critical doping threshold. The effect of Bi on the optical properties of GST is also investigated. The microscopic insight from this study may assist in the future selection of dopants to optimize the phase‐change properties of GST, and also of other PCMs, and the general methods employed in this work should be applicable to the study of related materials, for example, doped chalcogenide glasses.     

Sb在高硅铝硅合金电磁分离过程中的变质行为

研究了高硅铝硅合金(45wt% Si)熔体电磁分离过程中,Sb添加量、下拉速率、温度等对分离效果的影响,对Sb在高硅铝硅合金电磁分离过程中的变质机理进行了分析。结果表明,在1500℃、下拉速率为10 μm/s时,过共晶铝硅合金熔体中加入Sb进行定向凝固后,合金部分硅铝比从11.53%降至11.21%,初晶硅富集区的硅含量从86wt%增至90wt%;当1500℃、下拉速率为40 μm/s时,合金部分硅铝比从12.56%降至12.13%,初晶硅富集区的硅含量从81wt%增至86.5wt%;加入变质剂后合金部分共晶硅相在α-Al基体中分布均匀且连续,形貌有所细化。     

DBDPE–Sb2O3复合阻燃LGFPP的热氧老化研究

采用十溴二苯乙烷(DBDPE)协同三氧化二锑(Sb2O3)组成复合阻燃剂DBDPE–Sb2O3(D–S)阻燃长玻纤增强聚丙烯(LGFPP),并采用热烘箱老化法研究了140℃条件下不同热氧老化时间对复合材料热氧老化性能的影响。结果表明,随着热氧老化时间的延长,LGFPP/D–S阻燃体系的氧指数值呈现出先升高后下降的趋势,垂直燃烧等级始终保持FV–0级的阻燃级别,复合材料的结晶度减小,力学性能逐渐下降。PP基体分子链的断裂以及玻纤与PP基体间发生界面脱粘是导致LGFPP/D–S复合材料宏观力学性能下降的主要原因。红外光谱表明,随着热氧老化时间的延长,试样表面会产生更多的生色基团使材料发生黄变,说明PP基体分子链的断裂加剧。