Effect of phosphoric acid on the performance of low antimony grid of Pb‐acid cell under constant current charging and discharging

Effect of phosphoric acid on the performance of Pb‐1.7%Sb grid of lead‐acid cell is studied in 5 M H₂SO₄ by cyclic galvanostatic polarization and impedance spectroscopy. An increase in capacitance to a maximum is recorded during the initial stages of the electro‐reduction of PbO₂ into Pb(II) compounds and attributed to concurrent compositional and dimensional changes. These changes include removal of O₂ bubbles, insertion of large amounts of H₂SO₄ and H₂O. Efficiency of PbO₂ formation decreases, while its rate of self‐discharge increases with increasing the charging current and in the presence of H₃PO₄. The charge capacity increases with increasing the discharging current due to the decrease in the self‐discharge. The charge capacity is lower in the presence of H₃PO₄. On increasing the cycle number, the corrodibility of the grid increases, because more layers of the surface Pb are involved in the self‐discharge. H₃PO₄ significantly retards the effect of cycle number.     

Lowering of Sn−Sb alloy melting points caused by substrate dissolution

Sn−5wt.%Sb alloy is used for the soldering of ceramic devices. Reaction couples, dissolution, and differential scanning calorimetry experiments are conducted to examine the interfacial reactions and dissolution of Ag substrates with the molten Sn−5wt.%Sb solder. One intermetallic compound, Ag₃Sn, is formed at 260°C at the Sn−5wt.%Sb/Ag contact. With the intake of Ag from the substrate, the binary Sn−5wt.%Sb alloy becomes a ternary (Sn−5wt.%Sb)_100−xAg_x melt. It is found that a small amount of Ag addition significantly lowers the melting point of the Sn−5wt.%Sb alloy. This phenomenon is illustrated with the (Sn−5wt.%Sb)_100−xAg_x isoplethal section.     

用纳米粉制备线性NTC敏感陶瓷材料

重点研究了由CdO-SnO2-WO3系列(简称Cd-Sn-W)和CdO-Sb2O3-WO3系列(简称Cd-Sb-W)及由它们共同组成的双基体三相(Cd2Sb2O7,CdSnO3,CdWO4)结构线性敏感陶瓷的制备方法。给出了上述半导体陶瓷的电子转移式;分析了半导相Cd2Sb2O7和CdSnO3的导电机理和电阻-温度(R-T)曲线呈线性的机理,并对其他相关特性进行了分析和研究。独立地设计了用化学共沉淀方法制备上述NTC(负温度系数)陶瓷微粉的化学反应方程式,并对聚乙二醇和无水乙醇在制备纳米微粉时所起的防止颗粒发生团聚现象的作用进行了分析。由于大分子量的聚乙二醇几乎是无毒的,对人体基本无毒害作用,因而有广泛的推广价值。     

CZ重掺锑硅单晶的锑和氧杂质

介绍了重掺锑硅单晶生长和应用中的主要特点,并对单晶生长过程中出现的关键问题,如锑的挥发、氧含量减少的原因进行了探讨并提出了一些解决办法     

制备条件对Ge2Sb2Te5薄膜电学性能的影响

研究了磁控溅射制备Ge2Sb2Te5薄膜时，制备条件诸如功率、气压等对薄膜性能的影响. 主要通过测量薄膜方块电阻随退火温度的变化情况，探索Ge2Sb2Te5薄膜的成长机理. 实验结果表明，不同溅射功率下制备的薄膜经不同温度退火后方块电阻没有明显的区别，而随着溅射气压的上升，薄膜方块电阻随退火温度的增加，下降的速率增加，意味着由面心立方结构转变为六方结构所需的结晶温度降低     

Miscibility gap in the GaAsy Sb1−y system

Measurements have been made to determine accurately the solidus curve of the pseudobinary section GaAs_ySb_1−y, by annealing samples to equilibrium and determining compositions by x-ray powder photography. It is found that the equilibriui diagram shows a peritectic form with a peritectic temperature of 745 ± 1‡C and a miscibility gap at that temperature extending from y = 0.38 to y = 0.68. It is also shown that as the temperature is lowered the miscibility gap widens rapidly, being from y = 0.30 to y = 0.95 at 700‡C. The form of these phase boundaries is important when growth of GaAs_ySb_1−y alloys by liquid phase epitaxy or similar techniques is considered.     

对甲基苯基荧光酮-CPB-Sb分光光度法测定微量锑的研究

对甲基苯基荧光酮是一种灵敏度高的显色剂,在分光光度分析法中应用较少。研究发现对甲基苯基荧光酮可以与锑发生显色反应,提出了一种新的对甲基苯基荧光酮测定微量锑分光光度法,该法显色反应快、测定灵敏度高,线性关系好,准确度高,锑(Ⅲ)吸收标准曲线y=0.0135x+0.0039(c:μg/25.00 mL),相关系数r=0.9970,可用于工业生产污水、固废、土壤等试样中微量锑的测定。     

微波促进稀土固体超强酸S2O2-8/Sb2O3/La3+催化合成乙酸苄酯

采用金属醇盐水解法制备了稀土固体超强酸S2 O2-8/Sb2O3/La3 催化剂,并用Hammett,IR,DTA/TGA,XRD等手段对催化剂进行了表征.以稀土固体超强酸S2O2-8/Sb2O3/La3 为催化剂、乙酸和苯甲醇为原料,在微波辐射下合成了乙酸苄酯.考察了催化剂制备条件及合成条件对酯化率的影响,催化剂最佳制备条件:用1.5 mol/L的(NH4)2S2O8和2.71%La(NO3)3混合溶液浸渍前体氧化物Sb2O3,经110℃烘干,于500℃焙烧3 h.最佳合成条件:n(苄醇):n(乙酸)=2:1,催化剂用量0.6 g,辐射时间25 min,微波功率528W,酯化率93.8%.用IR、1H NMR等手段对产物进行了确证.     

Barrier and porous anodic oxides on InSb

Anodizing of InSb at 5 mA cm⁻² in sodium tungstate electrolyte is shown to produce barrier-type amorphous oxide at relatively low voltages, to about 40 V, and porous-type amorphous oxide at increased voltages. The barrier-type amorphous oxide, consisting of units of In₂O₃ and Sb₂O₃, distributed relatively uniformly throughout the film, develops at a formation ratio of 2.2 ± 0.2 nm V⁻¹. The outer 15–20% of the film also contains tungsten species. The relatively high efficiency of barrier film growth reduces significantly with transition to porous oxide, which is associated additionally with generation of oxygen at the film surface. The final oxide, at 65 V, comprises pores, of typical diameter 80 nm, orientated approximately normal to the substrate and extending from a barrier region to the film surface.     

Sb-coated mesophase graphite powder as anode material for lithium-ion batteries

Antimony-coated mesophase graphite powder (MGP) composites are developed as an alternate anode material for Li-ion batteries using an argon atmosphere pyrolysis technique. The specific discharge capacity and cycle life of the Sb-MGP composites are studied. The Sb loading of the Sb-MGP has a significant effect on the composite performance. The Sb-MGP samples demonstrate improved lithium storage capacity. The Sb loading on MGP is optimized experimentally to obtain the maximum reversible capacity for composite electrodes. The reaction processes of lithium intercalation/de-intercalation in MGP and alloying of lithium/Sb are identified by cyclic voltammetry. ICP and EDS measurements confirm the presence of Sb in the MGP matrix. Differential scanning calorimetry (DSC) scans of lithium intercalated anodes show that Sb loading on the MGP material reduces the thermal stability of the anode.