Low-temperature processing of antimony-implanted silicon

It is shown for the first time that antimony-implanted silicon produces the highest electrical activation (90%) with low resistivity (<200 ohms/square) following low-temperature processing. Thus, annealing at 650°C produces the best results for antimony, whereas for arsenic, it is necessary to anneal at temperatures above 1000°C to get optimum results. Silicon was implanted with antimony at 12 keV and 40 keV and doses of 8.5×10¹⁴ cm⁻² and 4×10¹⁴ cm⁻², respectively, and arsenic at equivalent energies and doses. The electrical data from both implants are compared in order to identify the process conditions require to obtain optimum results. It is demonstrated that annealing below 800°C produces electrical profiles with no measurable diffusion of the antimony, but higher temperature anneals produce significant diffusional broadening.     

Radiation damage and annealing behaviour in Be+-implanted pure Ga(Al)Sb layers

Implantation of Be⁺ ions into GaAISb epilayers is used to realize thep ⁺ layer of the Ga_0.96Al_0.04Sb p⁺/Ga_0.96Al_0.04Sbn ⁻ /GaSbn ⁺ (1.55 /Μm) avalanche photodetector whose performances are detailed in Ref. (1). The GaAISb layers are grown using liquid phase epitaxy (LPE); the quality of these as-grown layers is shown through photoluminescence and channeling measurements. The last part of this paper is devoted to the damaging level in the Be⁺-implanted layers. Some annealing techniques are presented as a mean of restoration of the implanted layers. It is clear from the results that the Be⁺ ion implantation leads to a low damage level in this III-V compound.     

Ge2Sb2Te5的电化学特性及化学机械抛光

从电化学角度研究了Ge2Sb2Te5薄膜在化学机械抛光液中的作用，以及不同的pH值和H2O2浓度下的电化学特性. 采用Solartron SI1287电化学设备测试了Ge2Sb2Te5薄膜在溶液中的开路电位和动电位扫描. 开路电位结果表明：Ge2Sb2Te5在pH值为10的抛光液中表现出钝化行为；而抛光液的pH值为11时，开始向活化转变；当pH值为12时，薄膜处于活化状态. 在动电位扫描过程中，不同的pH值和H2O2浓度下，薄膜的扫描曲线形状相似，表明薄膜腐蚀具有相同的反应机理. 自制碱性抛光液，对Ge2Sb2Te5薄膜进行化学机械抛光，用SEM和EDS对抛光后的结构进行分析. 结果表明，通过CMP实现了Ge2Sb2Te5填充结构.     

FAAS法连续测定电解锰阳极板中银和锑

在电解法制锰时，阳极板中微量元素直接影响板的使用寿命和导电性能，其中主要有银和锑。文中用硝酸和酒石酸的混合酸处理样品￣［１］，在不过滤的情况下直接测定，方法快速简便。通过试样分析及方法检验，结果满意。银和锑的加标回收率分别达１０５％，９８％；标准偏差分别为０．００５６，０．００１３；相对标准偏差分别为２．１％，３．３８％。     

钛酸酯偶联剂在LDPE填充体系中的应用

研究了钛酸酯偶联剂处理ＣａＣＯ３、Ｓｂ２Ｏ３填料表面微观的结构变化及对ＬＤＰＥ／ＣａＣｏ３、ＬＤＰＥ／Ｓｂ２Ｏ３体系性能的影响。结果表明，提高了ＬＤＰＥ／ＣａＣＯ３体系的断裂伸长率，具有较好的加工流动性；改善了ＬＤＰＥ／Ｓｂ２Ｏ３体系的阻燃性及冲击性能。     

应用双道原子荧光光度计同时测定水中砷和锑

氢化物发生原子荧光光度法同时测定水中砷和锑,在优化实验条件下,砷和锑的检出限可分别达到:As:0.020μg/L,Sb:0.041μg/L。     

SO2-4/Sb2O3/SiO2复合固体超强酸催化合成乙酸异戊酯

以乙酸和异戊醇为原料,固体超强酸SO2-4/Sb2O3/SiO2作催化剂,催化合成乙酸异戊酯.考察了醇酸比、催化剂用量、反应温度与反应时间对酯化反应的影响.结果表明,乙酸异戊酯的最佳合成条件为:n(异戊醇) ∶n(乙酸)=1.4 ∶1,催化剂用量为1.2 g,反应时间4 h,反应温度108～112 ℃,在此条件下酯化率可达95.7%.并用IR手段对产品进行了确证.     

Study of Ge2Sb2Te5 Film for Nonvolatile Memory Medium

The amorphous Ge2Sb2Te5 film with stoichiometric compositions was deposited by co-sputtering of separate Ge, Sb, and Te targets on SiO2/Si (100) wafer in ultrahigh vacuum magnetron sputtering apparatus. The crystallization behavior of amorphous Ge2Sb2Te5 film was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and differential scanning calorimetry (DSC). With an increase of annealing temperature, the amorphous Ge2Sb2Te5 film undergoes a two-step crystallization process that it first crystallizes in face-centered-cubic (fcc) crystal structure and finally fcc structure changes to hexagonal (hex) structure. Activation energy values of 3.636±0.137 and 1.579±0.005 eV correspond to the crystallization and structural transformation processes, respectively. From annealing temperature dependence of the film resistivity, it is determined that the first steep decrease of the resistivity corresponds to crystallization while the second one is primarily caused by structural transformation from     

Phase Equilibria of the Sn-Sb Binary System

Sn-Sb alloys are important high-temperature solders. However, inconsistencies are found in the available phase diagrams, and some phase boundaries in the Sn-Sb system have not been determined. Sn-Sb alloys were prepared, equilibrated at 160°C to 300°C, and the equilibrium phases and their compositions were determined. The β-SnSb phase has a very wide compositional homogeneity range, and its composition varies from Sn-47.0at.%Sb to Sn-62.8at.%Sb. There is no order–disorder transformation of the β-SnSb phase. There are three peritectic reactions in the Sn-Sb system, L + Sb = β-SnSb, L + β-SnSb = Sn₃Sb₂, and L + Sn₃Sb₂ = Sn, and their temperatures are 424°C, 323°C, and 243°C, respectively. Thermodynamic models of the Sn-Sb binary system were developed using the CALPHAD approach based on the experimental results of this study and the data in the literature. The calculated phase diagram and thermodynamic properties are in good agreement with the experimental determinations.     

Sb变质Mg-6Al-1Zn-0.7Si镁合金的组织和性能

研究了Sb变质Mg-6Al-1Zn-0.7Si镁合金的凝固行为、铸态组织及力学性能。研究结果表明:Mg-6Al-1Zn-0.7Si合金的铸态组织主要由初生!-Mg、M17Al12和Mg2Si相组成,其中Mg2Si相的汉字状形态非常明显,且比较粗大。而添加0.4%Sb变质后,合金组织中的Mg2Si相变得相对细小,从而使合金的拉伸性能以及抗蠕变性能得到提高。此外,添加0.4%Sb对Mg-6Al-1Zn-0.7Si合金凝固过程中的相变类型没有影响,并且对合金的相变峰值温度、开始转变温度和凝固温度范围的影响也不大。