火焰原子吸收光谱法测定硅粉中的铜

介绍了用火焰原子吸收法测定工业硅粉中微量铜的具体方法和过程，同时也给出了最佳实验条件。实验中采用新的样品处理方法，得到了令人满意的结果。其中样品回收率为99．8％—104．0%，相对标准偏差为0．31％—0.38％。本方法在实际应用过程中，简单、快速、     

红外吸收法测硅铁中的超低硫

应用高频红外碳硫仪,建立了硅铁合金中超低硫测定方法,对选择适当的测定条件如助熔剂、分析时间等进行了探讨,最佳测定条件:最大工作电流为400～480 mA;载气纯度为99.99%;陶瓷坩埚需经1 100℃灼烧2 h后,可使空白降至最小;硫元素最短分析时间为40 s,比较水平为5.00.     

High temperature field effect hydrogen and hydrocarbon gas sensors based on SiC MOS devices

The growing need for reliable, efficient, high temperature hydrogen and hydrocarbon monitoring has fueled research into novel structures for gas sensing. Metal oxide semiconductor (MOS) devices employing a catalytic metal layer have emerged as one of the leading sensing platforms for such applications, owing to their high sensitivity and inherent capability for signal amplification. The limited operating temperature of such devices employing silicon as the semiconductor has led research efforts to focus on replacing them with devices based on silicon carbide (SiC). More recently, MOS devices having different oxide layers exhibiting improved sensing performance have emerged. Considering the amount of research that has been carried out in this area in recent times, it is important to elucidate the new findings and the gas interaction mechanisms that have been ascribed to such devices, and bring together several theories proposed by different research groups. In this paper we first highlight the needs which have driven research into SiC based field effect hydrogen and hydrocarbon sensors, illustrate the various structures being investigated, and describe the device evolution and current status. We provide several sensing examples of devices that make use of different oxide layers and demonstrate how their electrical properties change in the presence of the gases, as well as presenting the hydrogen gas interaction mechanisms of these sensors.     

High responsivity silicon MOS phototransistors

We describe a metal-oxide silicon (MOS) phototransistor that relies on a novel lateral doping scheme that creates a p-i-n junction configuration for light detection. This is essentially a hybrid device with the horizontal structure of a p-i-n diode and the vertical structure of a MOS field-effect transistor. The lateral p-i-n diode detects light whereas the gate can be used to change the current flowing through the device; making it appear as a MOSFET. This feature makes it easy to integrate it with other conventional MOSFETs on a CMOS process flow. The device shows high optical responsivities that persist to wavelengths in the near-ultraviolet region. The fabrication of the device as well as its electrical and optical characteristics is described.     

DRIE based technology for 3D silicon barcodes fabrication

Microworld barcoding has become a promising tool for cell biology. Individual and subpopulation cell tracking is of great interest to evaluate cell behaviour. Nowadays, many micrometer and even nanometer size silicon structures can be fabricated using microelectronics techniques. In this work we report for first time the development of 3D barcodes based on silicon substrate. The proposed silicon micromachining technology based on deep reactive ion etching (DRIE) allows to obtain micrometer-sized cylindrical structures with vertical etch profile that defines a bit = 1 and non-vertical etch profile that defines a bit = 0. Although this technology will allow more than 15 bits representation, only 4-8 bits are necessary for cell labelling. The results of this work show that DRIE has become a versatile technique to produce high aspect 3D biocompatible silicon-based barcodes structures for cell studies.     

德州仪器率先获得Netflix高清认证 为Android设备带来全新流媒体功能

日前,德州仪器(TI)宣布获得Netflix Silicon Reference Implementation(SRI)认证,率先成为其可通过Android实现Netflix高清应用的合作伙伴。TI OMAPTM 4平台具有M-ShieldTM安全技术,可充分满足Netflix对移动流媒体内容的     

一种实用的数控可控硅触发电

介绍一种采用石英晶体振荡器作计数脉冲振荡源,用光电耦合器将触发电路和主电路进行隔离的数控可控硅触发电路。该电路具有可靠性和控制精度高,抗干扰能力强等特点。     

A silicon transconductance light emitting device (TRANSLED)

A novel multi-terminal silicon light emitting device (TRANSLED) is described where both the light intensity and spatial light pattern of the device are controlled by an insulated MOS gate voltage. This presents a major advantage over two terminals Si-LEDs, which require direct modulation of the relatively high avalanche current. It is found that, depending on the bias conditions, the light intensity is either a linear or a quadratic function of the applied gate voltage. The nonlinear relationship facilitates new applications such as the mixing of electrical input signals and modulating the optical output signal, which cannot readily be achieved with two terminal Si-LEDs, since they exhibit a linear relationship between diode avalanche current and light intensity. Furthermore, the control gate voltage can also modulate the emission pattern of the light emitting regions, for example, changing the TRANSLED from an optical line source to two point sources.     

High-pressure plastic flow in silicon: A first-principles theoretical study

Summary Microindentation experiments have recently shown that silicon can exhibit plastic flow when subjected to high pressure. Assuming that under these conditions the relevant reference structure is the -Sn high-pressure phase of silicon, we apply the magic-strain concept to explore the space of configurations that could describe the observed behavior. We use first-principles total-energy calculations (including full relaxation of the atomic basis for every structure) to evaluate the relevance of strained configurations. Using this approach, we were able to identify a low-energy path that corresponds to planar flow of the atoms. The atomic configurations along this path provide insight into possible microscopic motions under high pressure that may be relevant to plastic flow in silicon.