High Gd Concentration GaGdN Grown at Low Temperatures

GaGdN layers were grown at temperatures below 300°C by radio-frequency plasma-assisted molecular beam epitaxy on sapphire substrates. GaGdN samples with high Gd concentration as high as 12.5% were obtained by lowering the growth temperature. X-ray diffraction results showed no obvious secondary phase, which means that the phase separation can be suppressed by the growth at low temperatures. All samples, including those grown at room temperature, showed ferromagnetic characteristics. Photoluminescence emission was observed, though spectra exhibit broad and sharp luminescence bands related to many kinds of defects. It is suggested that electrons coming from defects, especially, nitrogen vacancy, stabilize ferromagnetism, and that the carrier-induced ferromagnetism occurs in the low-temperature-growth GaGdN.     

阶梯教室、图书馆的结构设计

结合阶梯大教室的结构布置设计和预应力混凝土技术的运用，阐述该类结构的合理布置和预应力梁设计方法。     

Microscale and mesoscale discrete models for dynamic fracture of structures built of brittle material

In this work we present the discrete models for dynamic fracture of structures built of brittle materials. The models construction is based on Voronoi cell representation of the heterogeneous structure, with the beam lattice network used to model the cohesive and compressive forces between the neighboring cells. Each lattice component is a geometrically exact shear deformable beam which can describe large rigid body motion and the most salient fracture mechanisms. The latter can be represented through the corresponding form of the beam constitutive equations, which are derived either at microscale with random distribution of material properties or at a mesoscale with average deterministic values. The proposed models are also placed within the framework of dynamics, where special attention is paid to constructing the lattice network mass matrix as well as the corresponding time-stepping schemes. Numerical simulations of compression and bending tests is given to illustrate the models performance.     

Determination of the Coordinates of the Center of a Gaussian Beam by Means of a Matrix Photodetector Using a Weighting Method

A weighting algorithm to determine the coordinates of the center of a Gaussian laser beam projected onto a matrix photodetector is considered. The influence of the internal noise of the photodetector, the maximum brightness of the signal at the beam maximum, and the beam radius on the precision of the algorithm is investigated. Recommendations on image processing are presented.     

Polarity control of GaN epilayers grown on ZnO templates

We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH₃ is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH₃ pre-exposure helps form a Zn₃N₂ layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar.     

激光二极管线阵光束变换研究

推导出激光二极管线阵光束通过透镜系统的光强分布表达式，分析了出射光束的传输特性，设计一种凹柱透镜的光束变换系统得到一维均匀光强分布。此外，给出扩展角宽度的计算公式。     

Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As Grown on InP

We have studied properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). A large MCD peak whose intensity is larger than 500 mdeg for (InGaMn)As was observed. This peak intensity was about three times larger than that of typical (GaMn)As films. Relatively high Curie temperature of 83 K of [(In_0.53Ga_0.47)_0.88Mn_0.12]As was observed by Hall measurements. The carrier concentration of [(In_0.53Ga_0.47)_0.88Mn_0.12]As was estimated to be more than 1.0 × 10²¹ cm^–3 by using the Curie–Weiss fitting of the Hall coefficient R _H, indicating that more than 40% of Mn atoms are activated. This means that (InGaMn)As has a higher activation ratio of Mn as acceptors than (GaMn)As.     

辐射剂量对环氧树脂电子束固化行为的影响

分析了电子束剂量对环氧树脂体系辐射固化行为的影响规律。研究结果表明，电子束辐射过程中，温度由树脂辐射体系表面向内部逐渐降低，随着辐射剂量提高，树脂体系温度上升，辐射表面与内部的温度梯度加大，高辐射剂量下的温度变化缓慢。树脂辐射固化层厚度以及在相同厚度的固化程度均随辐射剂量增加，但增幅逐渐变小，树脂辐射固化度沿固化深度会加速下降。     

填充等离子体波纹波导色散曲线计算软件的设计

从一种正弦波纹波导慢波结构的色散方程理论推导出发,设计了在不同结构参数、有无电子注以及填充不同等离子体浓度的情况下,计算其色散曲线的专用软件.该软件除了具有传统的数值计算功能外,提供了一个较为友好的图形用户界面.该界面直接显示该波纹波导的结构图,同时用户可以通过该界面很方便地修改各主要参数,比较不同情况下得到的色散曲线,以获得优化的参数选择.