Epitaxial growth of GaN on (0001) Al<Subscript>2</Subscript>O<Subscript>3</Subscript> via solution-cast seed layer formation process using Ga(mDTC)<Subscript>3</Subscript>

This paper reports an alternative method for the growth of GaN epitaxial layer on (0001) Al₂O₃ substrate by hot-wall vapor phase epitaxy technique. Tris (N,N-dimethyldithiocarbamato)-gallium (III), Ga(mDTC)₃ was introduced as a precursor material for the seed layer formation in the growth of GaN. Optimal growth conditions with seed layers formed by the Ga(mDTC)₃ concentration of 0.047 mol/L were identified: Growth temperature was found to be 850 °C, and optimal distance between the reactant outlet and substrate was determined to be 12.5 cm. Characterization results showed that this growth method produce high-crystallinity GaN epitaxial layers at a relatively lower growth temperature compared to the existing growth techniques and simplify the growth process.     

Response surface methodology applied for Orange II photocatalytic degradation in TiO2 aqueous suspensions

BACKGROUND: Heterogeneous photocatalysis is influenced by a number of parameters involving synergistic effects; hence, an experimental strategy design that considers interactions between the main variables is needed. The response surface methodology was applied for the investigation of photodegradation of 20 mg L^?1 Orange II in aqueous solutions and for optimization of color removal efficiency. Preliminary studies were performed to identify the parameters to be selected for optimization. RESULTS: The input variables considered for experimental design were: solution initial pH, oxidizing agent (H₂O₂) initial concentration and UV‐A irradiation time. The multivariate experimental design allowed the development of a quadratic response surface model to be used for the prediction of color removal efficiency over the full range of the experimental region. Under the optimum conditions established in the region of experimentation (pH = 6.9, [H₂O₂]₀ = 183 mg L^?1 and t = 32 min), a 100% color removal efficiency was obtained in experiments. CONCLUSIONS: It was found that the variables considered have important effects on color removal efficiency. The results demonstrate that the use of experimental design strategy is indispensable for successful investigation and adequate modeling of the process because the interdependence of the reaction parameters cannot be neglected. Copyright © 2008 Society of Chemical Industry     

Structural modelling of coprecipitated VTiO catalysts

A statistical study of the particle shape and size of pure V₂O₅ and TiO₂, and samples of coprecipitated V₂O₅---TiO₂ catalysts with different V/Ti ratios, has been performed. They were also characterized by XRD, EDAX, SEM and XPS. The results showed that pure vanadium pentoxide is compose by large square or needle-shaped particles, while pure titanium dioxide has small and rounded ones. VTiO samples presented an area and shape, depending on the V/Ti ratio.

These results and the spectroscopical characterization conducted to a particle model of the catalysts. Those VOTi samples with high V/Ti ratio would have large V₂O₅ crystals acting as support of a V/TiO₂ solid solution. In contrast, those samples with a low V/Ti ratio, would have the solid solution supporting vanadium pentoxide crystals.     

Al2O3—TiB2陶瓷刀具材料的高温氧化及其对刀具耐磨性能的影响

研究了Ａｌ２Ｏ３－ＴｉＢ２陶瓷刀具材料在１０００℃下的氧化行为，用ＸＲＤ、ＳＥＭ分析了氧化后的相组成及显微结构。结果表明：Ａｌ２Ｏ３－ＴｉＢ２陶瓷材料在１０００℃空气中氧化增重符合抛物线规律；随ＴｉＢ２含量的增加，该材料的抗氧化能力下降。     

2－重自补图论（Ⅲ）──计数理论

文中解决了２－重自补图的计数问题，获得了具有ｐ个顶点的２－重自补图的数目是其中Ｚ（Ａ）表示置换群Ａ的圈指标，Ｓ￣（２）＿ｐ表示ｐ次对称群的对群．     

Phase relations in the system ln-CulnS2

By DTA and x-ray diffraction the phase relations in the pseudobinary system In-CuInS₂ have been investigated. CuInS₂ hs a melting point of 1090&#x00B0; C and within this system there is a broad region of liquid immiscibility. A four phase invariant reaction exists at 633&#x00B0; C which is of the form: L₂ = L₁+ CuInS₂ + InS.     

Precipitation behavior of σ phase in fusion zone of dissimilar stainless steel welds during multi-pass GTAW process

The purpose of this study is to investigate the precipitation characteristics of σ phase in the fusion zone of stainless steel welds at various welding passes during a tungsten are welding (GTAW) process. The morphology, quantity, and chemical composition of the δ-ferrite and σ phase were analyzed using optical microscopy (OM), a ferritscope (FS), a X-ray diffractometer (XRD), scanning electron microscopy (SEM), an electron probe micro-analyzer (EPMA), and a wavelength dispersive spectrometer (WDS), respectively. Massive δ-ferrite was observed in the fusion zone of the first pass welds during welding of dissimilar stainless steels. The σ phase precipitated at the inner δ-ferrite particles and decreased δ-ferrite content during the third pass welding. The σ and δ phases can be stabilized by Si element, which promoted the phase transformation of σ→ϱ+λ₂ in the fusion zone of the third pass welds. It was found that the σ phase was a Fe−Cr−Si intermetallic compound found in the fusion zone of the third pass welds during multi-pass welding.     

The determinants of heat-shock element-directed lacZ expression in Saccharomyces cerevisiae.

Heat-shock induction of heat-shock protein genes is due to a specific promoter element (the heat-shock element, HSE). This study used lacZ under HSE control (HSE-lacZ) to characterize HSE activity in Saccharomyces cerevisiae cells of different physiological states and differing genetic backgrounds. In batch fermentations HSE-lacZ induction by heat shock was maximal in exponential growth, and showed marked decline with the approach to stationary phase. Expression in the absence of heat shock was unaffected by growth phase, indicating that the growth-dependent expression of many yeast heat-shock genes uses promoter elements in addition to the HSE. Heat-induced expression was strongly influenced by the temperature at which cultures were grown. While basal, uninduced expression was constant during growth at different temperatures to 30 degrees C, induction by transfer to 39 degrees C was reduced by increases in growth temperature as low as 18-24 degrees C. Maximal HSE-lacZ induction (30- to 50-fold) was in cultures grown at low temperatures (18-24 degrees C), then heat shocked at 39 degrees C. Ethanol was a poor inducer. Mutations having little effect on HSE-lacZ expression included a respiratory petite; ubi4 (which inactivates the poly-ubiquitin gene); also ubc4 and ubc5 (which each inactivate one of the ubiquitin ligases involved in degradation of aberrant protein). pep4-3 increased both basal and induced beta-galactosidase about two-fold, probably because of slower turnover of this enzyme in pep4-3 strains.