Carbon membrane bridged ZnSe and TiO2 nanotube arrays: Fabrication and promising application in photoelectrochemical water splitting

In this work, a cascade structure among ZnSe, carbon membrane and TiO₂ NTAs was constructed precisely. This carbon membrane bridged ZnSe and TiO₂ composite exhibits excellent H₂ evolution activity, the H₂ evolution rate of ZnSe/C/TiO₂ NTAs (866.76 μmol/cm²) is about 6.95 times higher than that of pure TiO₂ NTAs (124.64 μmol/cm²) after 200 min irradiation. The introduction of carbon membrane can greatly facilitate the electron transfer from ZnSe to TiO₂, ZnSe/C/TiO₂ ternary composite exhibits the highest transient photocurrent density (1.05 mA/cm²) and the lowest impedance (677.6 Ω) among all the samples. Besides, the contact between TiO₂ and electrolyte is improved after introducing carbon membrane, therefore C/TiO₂ NTAs shows more positive flat band potential of (1.86 V) compared with TiO₂ NTAs (0.50 V). It is also found that pure carbon powder can achieve H₂ production under visible light irradiation, its sensitization effect can further improve photocurrent density of the composite under 500 nm light radiation, the electrons produced in carbon film can inject into TiO₂, and holes from TiO₂ can quickly transfer to carbon film, leading to excellent H₂ evolution efficiency.     

TEM characterization of self-organized CdSe/ZnSe quantum dots

CdSe quantum dots (QDs) grown on ZnSe were investigated by various transmission electron microscopy (TEM) techniques including diffraction contrast imaging, high-resolution and analytical transmission electron microscopy both of plan-view as well as cross-section specimens. The size of the QDs ranges from about 5–50 nm, where from the contrast features in plan-view imaging two classes can be differentiated. In the features of the smaller dots there is no inner fine structure resolvable. The larger ones exhibit contrast features of fourfold symmetry as expected for pyramid-like islands. Corresponding simulations of diffraction contrast images of truncated CdSe pyramids with the edges of the basal plane orientated parallel to <100> are in relatively good agreement with this assumption. In TEM diffraction contrast imaging of cross-section samples the locations of the quantum dots are visualized by additional dark contrast features. The QDs have a distinct larger extension in growth direction compared to the almost uniformly thick CdSe wetting layer. The presence of the CdSe QDs was also confirmed by energy-dispersive X-ray spectroscopy.     

Williamson-Hall analysis in evaluation of lattice strain and the density of lattice dislocation for nanometer scaled ZnSe and ZnSe:Cu particles

Undoped and Cu-doped ZnSe nanoparticle (NPs) were prepared and grown hydrothermally in aqueous media assisted by microwave irradiation (MWIR) at different synthesis conditions of pH and MWIR times. In the mentioned process, sodium hydroxide (NaBH₄), used for preparing selenium ions source with dissolving it and selenium powder in deionized water. To investigate the structural aspects and nanoparticles morphology, X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used. According to the results of XRD, no displacement was seen in the position of XRD peaks of ZnSe nanoparticles by altering the pH and microwave irradiation time. XRD analysis demonstrated cubic zinc blende NPs and TEM images indicated round shape morphology of them. Depending to the microwave irradiation time, upon the XRD outputs, the size of the synthesized NPs were in the range of 1.54–2.18 nm. In this research, for samples synthesized at different pHs (= 8, 10.2, 11.2 and 12.2), at two microwave irradiation time of 0 and 6 min, and also at the presence of Cu-dopant (with the contents of 0, 0.1,0.75 and 1.5%), structural characteristics such as dislocation density(δ), lattice strain(ε), size of nanoparticles (D) and full width at half maximum (FWHM:β_hkl) have been evaluated upon the Scherrer and Williamson-Hall methods, in which undoped and ZnSe:Cu 0.1% synthesized at pH = 11.2 have the best crystalline quality; such results for the optimum samples, introduce them as promising materials in optoelectronic devices. The results of structural features obtained from Scherrer and Williamson-Hall approaches are highly intercorrelated and show the same trends with the variation of synthesis conditions.     

ZnSe/CoSe/NCDPH composites as anode materials for lithium ion batteries with high capacity and long cycle

In this paper, dopamine hydrochloride (DPH) is introduced to synthesize ZIF-8@ZIF-67@DPH in the preparation of ZIF-8@ZIF-67. ZnSe/CoSe/NC_DPH (N-doped carbon) composites are calcined in a high-temperature inert atmosphere with ZIF-8@ZIF-67@DPH as the precursor, selenium powder as the selenium source. ZnSe/CoSe/NC_DPH has high discharge specific capacity, good cycle stability and outstanding rate performance. The first discharge capacity of ZnSe/CoSe/NC_DPH is 1616.6 mAh g⁻¹ at the current density of 0.1 A g⁻¹, and the reversible capacity remains at 1214.2 mAh g⁻¹ after 100 cycles, the reversible capacity is 416.7 mAh g⁻¹ after 1000 cycles at 1 A g⁻¹. Therefore, ZnSe/CoSe/NC_DPH composites provide a new step for the research and synthesis of new stable, high-capacity, and safe high-performance lithium ion batteries. The bimetallic selenide composites not only have bimetallic active sites, but also can form synergistic effect between different metal phases, which can effectively reduce the capacity attenuation caused by volume expansion and reactive stress enrichment during lithium storage of metal oxide anode materials. Meanwhile, N-doped carbon can improve the conductivity and provide more active sites to store lithium, thus improving its lithium storage capacity.     

One-pot room temperature synthesis of biopolymer-capped ZnSe nanoparticles

The synthesis of monodispersed, starch-capped ZnSe nanoparticles via a facile, “green” and environmentally benign route at room temperature is being reported. The nanoparticles exhibited strong quantum confinement effect with respect to the bulk ZnSe. The transmission electron microscopy (TEM) image indicated that the particles were well dispersed and spherical in shape. The X-ray diffraction (XRD) analysis showed that the ZnSe nanoparticles were of the wurtzite structure, with average particle diameter of about 3.50 nm. The Fourier transform infrared (FT-IR) spectrum confirmed the presence of starch as passivating agent.     

Cd-free buffer layers for CIGS solar cells prepared by a dry process

ZnSe buffer layers for Cu(ln,Ga)Se₂/buffer/ZnO solar cells have been prepared by metal organic chemical vapor deposition (MOCVD). Using photoassisted MOCVD, deposition temperatures down to 265°C are possible. It is shown that deposition temperatures well below 300°C are essential as well as deposition times not much longer than 3 min. Higher temperatures and longer deposition times lead to absorber degradation. With optimized buffer deposition efficiencies of 11% have been obtained on CIGS absorbers from the Siemens pilot production line.     

脉冲激光烧蚀沉积ZnSe薄膜的研究

用 2 48nm的KrF准分子脉冲激光烧蚀ZnSe靶材沉积ZnSe薄膜。靶采用多晶ZnSe片 ,衬底采用抛光GaAs(10 0 )。衬底预处理采用化学刻蚀和高温处理。原子力显微镜 (AFM )观察显示在GaAs(10 0 )沉积的ZnSe薄膜的平均粗糙度为 3～ 4nm。X射线衍射 (XRD)结果表明ZnSe薄膜 (4 0 0 )峰的半高宽 (FWHM)为 0 4°～ 0 5°。对激光烧蚀团束的四极质谱分析表明烧蚀团束主要由Zn ,Se和 2Se组成 ,并由此推断ZnSe薄膜的二维生长模式。     

蓝绿光半导体光电子器件的研究与发展现状

综述了CaN和ZnSe两大系列半导体光电子器件的研究与发展现状,重点讨论了材料的生长方法,给出了器件发展的最高水平。     

ZnSe单晶薄膜生长控制和掺杂控制

为研制ZnSe基蓝绿色半导体激光器,必须能够对组成激光器的各单元材料实现精确控制生长,包括材料的晶体质量、掺杂浓度和生长速度等。ZnSe是制备蓝绿激光器的基础材料,本文报道利用MBE技术对ZnSe材料进行生长控制和掺杂控制的初步研究结果。     

Atomistic tight-binding computations of the electronic properties of ZnSe/ZnS core/shell nanocrystals under applied electric field

The effect of applied electric field on the electronic properties of spherical ZnSe/ZnS core/shell nanocrystals of experimentally relevant size is investigated by the atomistic tight-binding theory. Using this model, the calculations show that a range of electronic properties, including the single-particle spectra, atomistic characters, charge densities, excitonic energies, ground-state coulomb energies, overlaps of the electron and hole wave functions and oscillation strengths, all depend on the strengths of the applied electric field. The spatial distributions of the electron and hole wave functions are induced by the applied electric field. The analysis demonstrates a clear manipulation of the electronic properties of ZnSe/ZnS core/shell nanocrystals by introducing and varying the applied electric field strengths. According to the comprehensive investigations, I suppose that these atomistic computations will be of prospective help for experimental works concentrated on the new optoelectronic devices based on the applied electric field.