Characterization of amorphous Ni-Si binary alloy films by flash evaporation

We previously reported on an extremely small temperature coefficient of resistivity (TCR) of thin amorphous Ni-Si film resistors fabricated by new flash evaporating method, which have a wide range of resistivity.¹ In the present paper, we describe the structural and chemical properties of these films for the purpose of clarifying the cause of resistive change of films resulting from heat treatment. X-ray diffraction patterns show that Ni-Si films with greater than 20 wt.% Si remains predominantly amorphous after heat treatment. Changes in composition and binding energy of the films resulting from heat treatment are measured by means of XPS. Electrical characteristics are also investigated as a function of Si concentration and temperature. The resistance variations resulting from heat treatment are found to originate from a structural change. The activation energy needed for this change is obtained by analyzing the extent of change during isothermal heating and found to vary from 1 eV to 2.5 eV with increasing Si content from 20 wt.% to 80 wt.%.     

ZL111铝合金表面Ni-Cr-Al激光熔覆层中的非晶组织

利用５ｋＷＣＯ２激光器激光熔覆铝合金表面的Ｎｉ－Ｃｒ－Ａｌ涂层,ＳＥＭ与ＴＥＭ分析结果表明,在激光熔覆层中存在有非晶组织,非晶组织呈空间扭曲薄片或杉叶状,它们分别存在于熔覆层颗粒间白色网状组织与颗粒中     

定向金刚石膜的合成及机理探索

采用热丝化学汽相淀积 (CVD) ,未用别的辅助措施 ,合成了 (10 0 )晶面的金刚石膜。结合CVD金刚石成核的微观过程 ,探讨了定向金刚石膜的形成机理。发现和研究了表面扩散对CVD金刚石成核的重要影响。     

一种能有效抑制背光照影响的非晶硅薄膜晶体管

提出了一种能有效抑制背光照影响的非晶硅薄膜晶体管结构。详细地分析了源、漏电极接触区和沟通区内载流子的输运特性。论述了在背光照射下,这种结构的ＴＦＴ能有铲抑制关态电流上升的机理。研究了有源层ａ－Ｓｉ：Ｈ膜层厚度对ＴＦＴ关态电流和开态电流的影响。检测辽种结构ＴＦＴ在暗态和背照射下的静态特性。     

用单片法测量不同工况下非晶合金带材的工频磁性能*

阐述了软磁材料磁性能测量使用的单片测试方法,包括电流法和H-coil法。采用单片H-coil法对不同工况下非晶合金带材的工频磁性能进行测试,对比正弦工况与谐波工况条件下的磁性能变化差异。     

非晶态Fe_(75)Cr_5P_(13)C_7合金粉末的耐蚀性研究

非晶合金性能的研究主要集中在磁性和机械性能方面,相比之下耐腐蚀等化学性能的研究较少。本文讨论的耐蚀非晶态Fe_(75)Cr_5P_(13)C_7合金粉末是采用工艺简单,成本低廉的内旋转溶液方法制的。在粉末中加入适量的粘结剂,压制成型,得到块体材料,研究其耐蚀性能。     

铁基非晶合金局部晶化过程中的矫顽力拐折现象

本文研究了铁基非晶合金在局部晶化过程中矫顽力的变化,观察到等温退火时矫顽力的拐折现象,并用析出相粒子由单畴转变为多畴加以说明.计算得到的理论曲线与实验曲线的特征相符.     

Au-Si非晶态合金的恒温相变

用电阻测定及X射线衍射法研究了共晶成分Au-Si合金快速凝固箔带在等温时效时的相变过程,提出了由非晶态至平衡态的四阶段转变顺序,分析了各亚稳相的结构和电子浓度特征,说明在等温时效过程中亦可生成Hume-Rothery电子化合物及尺寸因素化合物。     

20.1%‐efficient crystalline silicon solar cell with amorphous silicon rear‐surface passivation

We have developed a crystalline silicon solar cell with amorphous silicon (a‐Si:H) rear‐surface passivation based on a simple process. The a‐Si:H layer is deposited at 225°C by plasma‐enhanced chemical vapor deposition. An aluminum grid is evaporated onto the a‐Si:H‐passivated rear. The base contacts are formed by COSIMA (contact formation to a‐Si:H passivated wafers by means of annealing) when subsequently depositing the front silicon nitride layer at 325°C. The a‐Si:H underneath the aluminum fingers dissolves completely within the aluminum and an ohmic contact to the base is formed. This contacting scheme results in a very low contact resistance of 3.5 ±0.2 mΩ cm² on low‐resistivity (0.5 Ω cm) p‐type silicon, which is below that obtained for conventional Al/Si contacts. We achieve an independently confirmed energy conversion efficiency of 20.1% under one‐sun standard testing conditions for a 4 cm² large cell. Measurements of the internal quantum efficiency show an improved rear surface passivation compared with reference cells with a silicon nitride rear passivation. Copyright © 2005 John Wiley & Sons, Ltd.