氟掺杂对非晶硅薄膜特性的影响

采用电容结构研究了氟(F,Flourine)掺杂非晶薄膜漏电、击穿以及温度特性。结果表明,氟掺杂钝化了非晶膜中的缺陷和悬挂键,使非晶薄膜漏电降低两个数量级,同时使击穿电压升高。掺杂非晶薄膜的漏电与温度呈指数增长,增长系数为0.0375 K^-1,击穿电压随温度线性减小,系数为0.012 V·K^-1。     

板状Fe-基大块非晶合金的制备及其断裂韧性测定

采用电弧熔炼母合金、普通铜模吸铸工艺 ,制备出尺寸规格为 2 0mm× 10mm× 1mm的板状Fe -Co -Zr -Mo -W -B系Fe -基大块非晶合金。经DTA检测 ,所制备的Fe -基非晶合金具有明显的玻璃转变温度和较宽的过冷液相区 (Tg=884K ,ΔTx≥ 6 0K)。采用压痕试验法测定了该板状Fe -基大块非晶合金的断裂韧性 ,其铸态断裂韧性在 1.6MPa·m1/ 2 量级。     

退火工艺对钨丝/锆基非晶合金复合材料动态力学性能及断裂模式的影响

研究了体积含量为60％的钨丝/锆基复合材料在经过退火处理后,材料的应力-应变响应和动态断裂特征以及断口形貌。利用Hopkingson压杆冲击加载装置和扫描电镜(SEM)以及X射线衍射仪(XRD),对Φ5mm×5mm的圆柱形试样进行了相关研究。研究表明,钨丝体积含量为60％的钨丝/锆基复合材料在经过退火处理后,非晶基体出现了明显的晶化现象;材料在退火后动态压缩强度比退火前有明显降低;退火后非晶基体断口形貌由退火前的完全的脉络花样转变为河流花样和脉络花样混合模式;经过动态冲击后,钨丝的断裂模式在退火前后变化大。     

20.1%‐efficient crystalline silicon solar cell with amorphous silicon rear‐surface passivation

We have developed a crystalline silicon solar cell with amorphous silicon (a‐Si:H) rear‐surface passivation based on a simple process. The a‐Si:H layer is deposited at 225°C by plasma‐enhanced chemical vapor deposition. An aluminum grid is evaporated onto the a‐Si:H‐passivated rear. The base contacts are formed by COSIMA (contact formation to a‐Si:H passivated wafers by means of annealing) when subsequently depositing the front silicon nitride layer at 325°C. The a‐Si:H underneath the aluminum fingers dissolves completely within the aluminum and an ohmic contact to the base is formed. This contacting scheme results in a very low contact resistance of 3.5 ±0.2 mΩ cm² on low‐resistivity (0.5 Ω cm) p‐type silicon, which is below that obtained for conventional Al/Si contacts. We achieve an independently confirmed energy conversion efficiency of 20.1% under one‐sun standard testing conditions for a 4 cm² large cell. Measurements of the internal quantum efficiency show an improved rear surface passivation compared with reference cells with a silicon nitride rear passivation. Copyright © 2005 John Wiley & Sons, Ltd.     

改善块体金属玻璃室温脆性的研究进展

块体金属玻璃有许多优良的性能,如高强度、高硬度、高比强度、好的耐腐蚀抗力以及优良的软磁性能等。然而,近乎于零的室温塑性应变严重限制了其作为结构材料的实际应用。总结了近年来改善块体金属玻璃室温脆性的最新研究进展,并对这些方法的优缺点进行了分析。     

Temperature influence on performance degradation of hydrogenated amorphous silicon solar cells irradiated with protons

This paper reports temperature influence on radiation degradation of hydrogenated amorphous silicon (a‐Si : H) solar cells. Degradation behaviors of a‐Si : H solar cells irradiated with protons at 331 K are compared with that at 298 K (room temperature). Variations with time in the post‐irradiation electrical properties are also investigated. It is found that the radiation degradation of the electrical properties at 331 K is significantly smaller than that at room temperature. Also, all the electrical properties (short‐circuit current, open‐circuit voltage, output maximum, and fill factor) recover with time after irradiation even at room temperature. The characteristic time of thermal annealing of short‐circuit current is larger as the temperature is higher. These results indicate that temperature during irradiation and elapsed time from irradiation to measurement is an important parameter for radiation degradation of a‐Si : H solar cells. Therefore, these parameters should be controlled in conducting the ground radiation tests. Copyright © 2012 John Wiley & Sons, Ltd.     

离子减薄诱发的Zr65Al7.5Ni10Cu17.5块状非晶晶化相的相变

用透射电子显微镜研究了锆基块状非晶合金晶化行为，对分别经双喷电解减薄加离子减薄和单纯双喷电解减薄制备的电镜样品进行观察分析，发现离子减薄会导致该合金晶化亚稳相的转变。     

Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region

We present a new approach based on the multi-trench technique to improve the electrical performances, which are the fill factor and the electrical efficiency. The key idea behind this approach is to introduce a new multi-trench region in the intrinsic layer, in order to modulate the total resistance of the solar cell. Based on 2-D numerical investigation and optimization of amorphous SiGe double-junction (a-Si:H/a-SiGe:H) thin film solar cells, in the present paper numerical models of electrical and optical parameters are developed to explain the impact of the multi-trench technique on the improvement of the double-junction solar cell electrical behavior for high performance photovoltaic applications. In this context, electrical characteristics of the proposed design are analyzed and compared with conventional amorphous silicon double-junction thin-film solar cells.     

用单片法测量不同工况下非晶合金带材的工频磁性能*

阐述了软磁材料磁性能测量使用的单片测试方法,包括电流法和H-coil法。采用单片H-coil法对不同工况下非晶合金带材的工频磁性能进行测试,对比正弦工况与谐波工况条件下的磁性能变化差异。