光通信用Er3+∶Yb3+共掺玻璃波导放大器

介绍了Er^3 :Yb^3 共掺玻璃波导放大器（EDWA）的原理、结构、制备及其优势与局限，同时还介绍了多种基于EDWA的集成放大器件以及它们在城域网／接入网，CATV等光通信领域的应用。     

高功率激光通过多级和多程脉冲放大器的传输特性

采用脉冲序列模型和薄片模型,对任意空间和时间分布波形的激光通过任意增益分布多级和多程脉冲放大系统的传输特性作了详细研究。     

掺铒光纤放大器的动态增益均衡

波分复用系统对掺铒光纤放大器增益的动态平坦提出了严格的要求，为此人们设计了各种动态增益均衡器以实现EDFA的增益谱的平坦化。现有的各种动态增益均衡技术分静态和动态两种。我们讨论了几种不同类型的动态增益均衡方法，详细并举例分析几种典型的动态增益均衡器基本结构、工作原理、适用范围及其优缺点。最后对未来动态增益均衡器的发展作了展望。     

EVM simulation and analysis in digital transmitter

The error vector magnitude (EVM) is extensively applied as a metric for digital transmitter signal quality compliance in modern communication systems. This article is focused on the effects of local oscillator (LO) phase noise and nonlinear distortion of power amplifier on EVM. This article contributes to below aspects. First, the relationships between EVM and two effects, LO phase noise and nonlinear distortion of power amplifier, are derived and expressed. Second, to simplify the expression, the third-order intermodulation distortion (IMD3) is used to calculate the EVM. Then, an expression for the EVM is derived based on the digital transmitter model that considers local oscillator phase noise and nonlinear distortion of power amplifier. Finally, the math formula of bit error rate (BER) versus EVM is given which can be easier and more useful to predict BER, according to analysis of the relationship between EVM and signal to noise rate (SNR), inspired by the works of Rishad, Md. Shahriar and AHM, 2006. Simulations are carried out to display the performance of EVM based on these relationships.     

Thermal behavior Spice study of 6H-SiC NMOS transistors

Silicon carbide is a material that is undergoing major advances associated with a broad scope in the field of electronics. The main properties of silicon carbide such as its high thermal conductivity and high band gap make it a material suitable for use in high-temperature and high-power applications. In this Spice study, the thermal behavior of 6H-SiC NMOS transistors is analyzed through their conductance and transconductance changes with temperature in the range −200 to 700 °C. The performances in two basic applications, current mirrors and differential amplifiers, are compared to similar circuits with silicon transistors. The results show that the 6H-SiC NMOS transistors can be used up to 700 °C, while those based on silicon transistors are limited to around 160 °C.     

Design approach for high‐bandwidth low‐power three‐stage operational amplifiers

A new design approach to optimize the frequency compensation network of three‐stage operational amplifiers (op‐amps) is presented. The proposed criterion is aimed at maximizing the bandwidth of well‐established three‐stage op‐amps using Nested‐Miller Compensation with feedforward tranconductance stage and nulling resistor (NMCFNR). As shown by design examples in a commercial 0.35‐µm CMOS technology, the proposed approach allows the amplifier bandwidth to be enhanced significantly with respect to that resulting from using existing design strategies for NMCFNR op‐amps. It is also demonstrated that NMCFNR op‐amps, designed according to the proposed method, even guarantee larger values of the gain‐bandwidth product than three‐stage amplifiers using more complicated frequency compensation techniques, such as AC boosting compensation or damping‐factor control frequency compensation. Copyright © 2010 John Wiley & Sons, Ltd.     

Power‐efficient analog design based on the class AB super source follower

A class AB version of the conventional super source follower (SSF) is described. The circuit greatly increases slew rate (SR) and current efficiency, maintaining the low distortion and low output resistance of the SSF. Class AB operation is achieved without extra power dissipation or supply requirements, and without bandwidth or noise degradation. The circuit can advantageously replace the SSF in a wide variety of analog systems, opening a new research line in analog design. To illustrate the widespread application of this cell, a class AB differential unity‐gain buffer, a class AB differential current mirror and two class AB differential transconductors are designed, fabricated in a 0.5µm CMOS technology and tested. Measurement results using a dual supply of ±1.65V show that the proposed class AB version of the SSF improves SR by a factor 21.5 and increases bandwidth by 10%, keeping noise level, input range, power consumption, and supply requirements unaltered. The fabricated class AB current mirror features a THD at 100 kHz of ? 62dB for signal currents 20 times larger than the bias current. The fabricated transconductors feature an IM3 at 1 MHz of ? 56.6dB for output currents more than 13 times larger than the bias currents. Copyright © 2011 John Wiley & Sons, Ltd.     

L波段EDFA的优化设计和实验验证

基于Giles模型,对L波段掺Er光纤放大器(EDFA)的特性进行了数值模拟,分析了采用高掺杂Er纤放大器输出性能的改善。根据数值分析的结果进行了优化设计,使用9m长的高掺杂Er光纤进行了实验研究。实验结果表明．在泵浦功率为100mw时,小信号增益在10dB以上,噪声指数小于6dB。     

受激喇曼散射对有级联掺铒光纤放大器波分复用系统的影响

本文研究了受激喇曼散射(SRS)对有级联掺铒光纤放大器(EDFA)的波分复用系统若干性能的影响.根据通信系统几率的特性,建立了SRS对通信系统误码率影响的理论模型,分析了它对输入光功率、信道数、信道间隔以及放大器个数和放大器间距的影响及相应限制.研究表明,合理采用较少的放大器数和较小的输入光功率,有利于保证系统的性能指标,降低系统造价,提高系统性价比;由最小误码率来综合确定合理的信道间隔和信道容量;通过合理的设置放大器及系统参数,可以使受激喇曼散射的影响减至最小,从而实现性能良好的长距离、大容量通信.     

一种采用新型复合沟道GaN HEMTs低噪声分布式放大器

设计研制了一种新型的低噪声分布式放大器,采用了栅长为1μm的低噪声复合沟道Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMT (CC-HEMT). 给出了低噪声分布式放大器的仿真和测试结果. 测试结果显示低噪声分布式放大器在2~10GHz频率范围内,输入和输出端口驻波比均小于2.0,相关增益大于7.0dB,带内增益波纹小于1dB . 在2~6GHz频率范围内,噪声系数小于5dB;在2~10GHz频率范围内,噪声系数小于6.5dB; 测试结果与仿真结果较吻合.