Two Modified Semicircle Control Charts for Detecting Process Improvement

A semicircle control chart can be used in detecting both increases and decreases in the mean and/or variance. In this paper, we propose two modified semicircle charts for detecting a reduction in the process variance, a.k.a. process improvement. Each of these modified semicircle charts, namely, SC1 and SC2 has two limits, defined by the inner and outer semicircles. A process improvement is detected by the SC1 scheme if a point is plotted inside the smallest semicircle, or if two successive points are plotted between the inner and outer semicircles and by the SC2 scheme if a point plots inside the smallest semicircle or if two of three successive points plot between the inner and outer semicircles. It will be shown that the two modified semicircle charts have superior average run length (ARL) performances to the basic semicircle chart in the detection of process improvement. The ARL study is conducted by means of a simulation.     

Comparison of Particle Size Distributions Measured Using Different Techniques

In this article, particle size distributions (PSDs) measured by different techniques, including image analysis (IA), laser diffraction (LD), ultrasonic attenuation spectroscopy (UAS), and focused-beam reflectance measurement (FBRM), are compared for spherical glass beads and nonspherical silica flakes. It is shown that particle shape strongly affects the results obtained by different techniques. For spheres, the PSDs obtained by IA, LD, and UAS agree well. There is no consistent result among different particle measurement techniques for nonspherical particles. The conversion between PSDs obtained by IA, LD, and UAS has been based on particle shape factors. Caution must be exercised when a measured chord length distribution (CLD) is used to indicate the PSD during a process because the CLD result obtained by FBRM is complex, depending not only on the PSD, but also on particle optical properties and shape.     

适用于H.264视频解码器的VLD设计

设计了一种适合于H-264的变字长解码器，根据码流特点进行模块划分，减少硬件开销；采用并行结构解NAL包，解码效率高；采用了桶形移位器，进行并行解码，每个时钟解一个码字。采用Verilog语言进行设计、仿真，并通过了FPGA验证，可以在FPGA上实时解码标准清晰度的H．264视频。用0．18μm CMOS工艺库作综合，电路规模为1．6万门左右，最高频率能够达到150MHz。     

岩质高边坡治理初探

岩质高边坡，因其缺乏生物赖以生存的环境，既使经过传统的加固措施，却因暴露于地表，受到风吹、日晒、雨淋等各种破坏性侵蚀作用，表层岩石很容易降低强度，发生剥蚀脱落，降低边坡稳定性，危及工程的安全性．针对岩质高边坡的特点，探讨了岩质高边坡的治理措施，介绍了一些新的边坡治理技术．高边坡治理既要注重稳定性，还要考虑生态环境问题，景观设计应成为边坡治理中的一部分．     

关于双缝干涉条纹在几种不同情况下的讨论

本文以杨氏双缝干涉实验为基础，讨论了在实验装置的几种变化情况下干涉条纹的变化。     

Experimental study on upward bubble velocity and pierce length distributions in a water model of copper converter

The upward bubble velocity and the pierce length distributions in a sectional water model of the copper converter in Guixi Smelter in Jiangxi, China, were measured using a two-contact electro-resistivity probe. In the case of using a single tuyere, the bubble velocity distribution along longitudinal direction was similar to that derived from Guassian function. Beyond the center of the longitudinal range, the bubble pierce length exhibited a sudden increase. The upward bubble velocity at a specified location could go up to meters per second. Its probability at a fixed location obeys a lognormal function; the bubble pierce length there varies bellow a few centimeters. In the case of using multi-tuyeres, the upward bubble velocity was roughly uniform right above the tuyeres and showed a slow decrease beyond this region. The bubble pierce length within both of these two regions was roughly uniform. Its average value in the former region, however, was found to be somewhat lower than that in the later.     

电子储存环的红外边缘辐射

介绍了电子储存环中偏转磁铁入口和出口处的非均匀磁场产生的辐射——边缘辐射，给出了零边缘长度、有限边缘长度、有限直线节长度条件下的辐射通量和亮度分布，通过与常规同步辐射场的比较，充分说明了边缘辐射是一种优良的红外同步辐射光源。     

光纤余长的概念及其实例解析

本文对光纤余长的概念作了完整的阐述,给出了光纤余长的明确定义,阐明了光纤余长的物理意义。借助于松管层绞式光缆典型结构,对光纤余长作了实例解析,提出了新的物理模型,分析了数学等式的物理意义,得出了较全面的、更加符合实际的光纤余长计算公式,对光缆的结构设计、生产制造及工程应用具有一定指导意义。     

降温替代法在改线施工中的应用

在线路升高改造中，由于线路局部升高，将引起线长的变化，因此需计算导线和地线的应力来进行线长调整，否则可能导致该耐张段应力增加。为此提出了一种试算方法——降温替代法，并通过实例详细说明了该方法的计算过程。     

大电流真空电弧特性的研究与分析

本文分析并介绍了大电流时纵向磁场，触头开距，触头半径等对电弧特性的影响，可为高压大容量直空断路器设计提供参考。