高压玻璃钢管道的研制及在油田中的应用

本文介绍了高压玻璃钢管道的特性及在我国油田的应用情况。     

高温预析出对Al-Zn-Mg系铝合金时效硬化和应力腐蚀的影响

研究了高温固溶后降温处理工艺对中强可使预析出LC52和7039铝合金的组织、时效硬化和应力腐蚀的影响。金相观察发现,高温预析出可优先在晶界处产生,并提高随后时效状态下晶界析出相的不连续分布程度,温度降低到一定程度晶内和晶界产生大量析出。合金拉伸性能和应力腐蚀结果表明,预析出在保持强度和塑性的同时,可提高抗应力腐蚀性能。而预析出温度降低,合金强度呈下降趋势。     

A continuum-based modeling of MEMS devices for estimating their resonant frequencies

A continuum-based modeling of coupled electrostatics-structure interactions is presented for the frequency computations of MEMS devices. The present general formulation of electrostatics accounting for free space is validated first by specializing it to one-dimensional uniform motion of conducting surfaces and comparing the resulting electrostatics to conventional lumped models. The general coupled electrostatics-structure interactions are then applied for the prediction of resonant frequencies of MEMS devices due to bias-voltage changes and temperature variations. Comparisons of predicted resonant frequencies obtained by the present coupled electrostatics-structure interaction models with experimental results available in the literature demonstrate that the proposed continuum-based interaction modeling yields high-confidence predictions of resonant frequencies of MEMS devices.     

Simulation of Strength Distribution in Ground Ceramics by Incorporating Residual Stress Effect

Strength of ground ceramics may be affected by residual stress as well as surface flaws induced by grinding. Strength prediction for ground ceramics is convenient for mechanical design of ceramic components. In this article, a numerical procedure based on fracture mechanics was proposed to estimate strength distribution of ground ceramics by considering grinding-induced residual stress. Bending strength and residual stress of ground ceramics were measured for three grinding-conditions. By comparison of simulated results with experimental ones, it was revealed that strength characteristics in experiments were well simulated by using the proposed procedure.     

Epidemiology of Trauma and Posttraumatic Stress Disorder in Mexico.

Prevalence rates of trauma and posttraumatic stress disorder (PTSD) were estimated from a probability sample of 2,509 adults from 4 cities in Mexico. PTSD was assessed according to Diagnostic and Statistical Manual of Mental Disorders (American Psychiatric Association, 1994) criteria using the Composite International Diagnostic Interview (CIDI; WHO, 1997). Lifetime prevalence of exposure and PTSD were 76% and 11.2%, respectively. Risk for PTSD was highest in Oaxaca (the poorest city), persons of lower socioeconomic status, and women. Conditional risk for PTSD was highest following sexual violence, but nonsexual violence and traumatic bereavement had greater overall impact because of their frequency. Of lifetime cases, 62% became chronic; only 42% received medical or professional care. The research demonstrates the importance of expanding the epidemiologic research base on trauma to include developing countries around the world. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Holographic polymer‐dispersed liquid crystal fabrication under electric field

The transmission mode of holographic polymer‐dispersed liquid crystals (HPDLCs) was developed an under electric field. It is reported that orientation of LC molecules under an electric field induces orientation of oligomer molecules giving rise to low off‐state diffraction and small grating shrinkage. Copyright © 2005 Society of Chemical Industry     

Electrical conductivity of ferroelectric sodium vanadate,rubidium vanadate,cesium vanadate and their solid solutions

The d.c. electrical conductivity of sodium vanadate, rubidium vanadate, cesium vanadate and their solid solutions sodium-rubidium vanadate and sodium-cesium vanadate were studied by a two-probe method in the temperature range covering their transition points. The electrical conductivity shows sharp change at the phase transition temperature of these materials. In NaVO₃, RbVO₃ and CsVO₃, increase in d.c. conductivity is observed in the ferroelectric region while nonlinearities are observed above transition temperatures. In solid solutions, the activation energy in the paraelectric state is higher than that in the ferroelectric state and depends upon sodium concentration.     

川西低渗气藏单井地应力计算方法综合研究

四川盆地新场气田是一个低孔低渗的裂缝性砂岩气田，储层物性差，自然产能低，需经压裂后才能投产，压裂后气井增加的产能与压裂的效果密切相关。提前认识储层当前地应力的特征，有助于压裂设计时确定裂缝产状、缝长、缝宽等参数，减少储层水力压裂改造的盲目性，降低中、低渗透油气田开发的风险。通过大量测井资料的计算，确定了新场气田储层地应力的大小和方向，并综合采用微地震测量、岩石声发射资料、古地磁等岩心测试资料和水力压裂等多种方法进行交互验证，各种方法求得的地应力特征十分相近，说明利用测井资料求取储集层地应力原理简单，计算结果符合实际的地应力特征，是一种低风险研究计算储层地应力特征的方法，可以用于指导低渗透油气田的井网部署和储层的单井压裂改造。     

The solution of the inverse problem of gravitational potential using a set of measurements of different field elements

A numerical solution of the inverse problem of the gravitational field at a single point is obtained using six field elements for a point, a spherical cap, a differential spherical sector and a vertical segment. In the system of six equations obtained, the unknowns are the mass of the body, the depth of its center, and the second, third, and fourth degree moments. The accuracy of the solution of this system is ten times higher than when using three field elements. __________ Translated from Izmeritel’naya Tekhnika, No. 5, pp. 3–8, May, 2007.     

Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.