Design of pseudo-ternary and quaternary alloys by superlattices consisting of (zn,cd)(s,se) binary ii–vi compounds

Theoretical design of pseudo-ternary and quaternary alloys by superlattice structures consisting of (Zn,Cd)(S,Se) binary II–VI compounds has been studied. For pseudo-ternary ZnCdS and ZnCdSe alloys, the superlattices with two layers in a cycle, i.e., ZnS/CdS and ZnSe/CdSe are considered, and for pseudo-quaternary ZnCdSSe alloy, the two superlattice structures with more than two layers in a cycle are considered. In order to design and evaluate these superlattices, the expression for the equilibrium in-plane lattice constant of these superlattices has been derived by minimizing the total elastic strain energy in the cycle. The combinations of layer thicknesses in a cycle and the effective bandgap of these superlattices have been calculated while the elastic strain effect was included. The usefulness of these superlattice structures has been evaluated.     

Benzobisthiazole as Weak Donor for Improved Photovoltaic Performance: Microwave Conductivity Technique Assisted Molecular Engineering

New donor–acceptor‐type copolymers comprised of benzobisthiazole (BBTz) as a weak donor rather than acceptor are proposed. This approach can simultaneously lead to deepening the HOMO and LUMO of the polymers with moderate energy offset against fullerene derivatives in bulk heterojunction organic photovoltaics. As a proof‐of‐concept, BBTz‐based random copolymers conjugated with typical electron acceptors: thienopyrroledione (TPD) and benzothiadiazole (BT) based on density functional theory calculations are synthesized. Laser‐flash and Xe‐flash time‐resolved microwave conductivity (TRMC) evaluations of polymer:[6,6]‐phenyl C₆₁ butyric acid methyl ester (PCBM) blends are conducted to screen the feasibility of the copolymers, leading to optimization of processing conditions for photovoltaic device application. According to the TMRC results, alternating BBTz‐BT copolymers are designed, exhibiting extended photoabsorption up to ca. 750 nm, deep HOMO (–5.5 to –5.7 eV), good miscibility with PCBM, and inherent crystalline nature. Moreover, the maximized PCE of 3.8%, the top‐class among BBTz‐based polymers reported so far, is realized in an inverted cell using TiO_x and MoO_x as the buffer layers. This study opens up opportunities to create low‐bandgap polymers with deep HOMO, and shows how the device‐less TRMC evaluation is of help for decision‐making on judicious molecular design.     

Modulating Blue Phosphorene by Synergetic Codoping: Indirect to Direct Gap Transition and Strong Bandgap Bowing

The structural and electronic properties of synergistically modified blue phosphorene (BP) is investigated. The inversion and threefold rotational symmetries of BP are broken. The codoping of group IV and VI impurities can turn monolayer BP into direct bandgap semiconductors. The underlying physical mechanism is that group IV and VI impurities tailor the valence band maximum and conduction band minimum, respectively, and move them to Γ. All the bandgaps of monolayer, nanoribbons, and quantum dots of BP can be modulated in a wide range, and the strong bandgap bowing is found. In addition, the Coulomb interactions between the screened impurities are revealed. Lower formation energies indicate the fabricating practicability of synergeticly modified BP. Spin–orbit coupling (SOC) can also be tuned by the introduction of impurities.     

高精度带隙基准电压源的实现

提出了一种高精度带隙基准电压源电路 ,通过补偿其输出电压所经过的三极管的基极电流获得精确的镜像电流源 .设计得到了在 - 2 0～ +80℃温度范围内温度系数为 3e - 6 /℃和 - 85 d B的电源电压抑制比的带隙基准电压源电路 .该电路采用台积电 (TSMC) 0 .35 μm、3.3V/ 5 V、5 V电源电压、2层多晶硅 4层金属 (2 P4 M)、CMOS工艺生产制造 ,芯片中基准电压源电路面积大小为 0 .6 5 4 mm× 0 .340 mm,功耗为 5 .2 m W.     

基于全固光子带隙光纤的传感器的特性研究

为了实现对基于全固光子带隙光纤（AS-PBF）的传感器的特性研究,采用了双锥型模式干涉仪的结构,使用熔接机在一根AS-PBF上间隔一段距离制作两个锥形光纤,制备出一种基于双锥型模式干涉的特种光纤传感器。与传统单模光纤或折射率传导的光子晶体不同,AS-PBF的纤芯有效折射率较低,而包层有效折射率较高。通过理论分析和实验验证,测量研究了这种光纤结构对温度和轴向应力的响应。实验结果表明,温度灵敏度和轴向应力灵敏度分别为~63pm/oC和~-1.74nm/ N。与长周期光栅、布拉格光栅相比,基于全固带隙光纤的双锥型模式干涉传感器具有制备简单、结构紧凑等优势,在光纤传感领域具有广泛的应用前景。     

一种用于新型非致冷红外焦平面阵列读出电路的基准电流源

设计了一种用于新型非制冷红外焦平面阵列读出电路的低温漂、无电阻基准电流源。首先通过二阶补偿的无电阻带隙基准电路得到基准电压$V_{_{REF}}$,然后将其接到一个NMOS输出管上;通过调节$V_{_{REF}}$使得该输出管工作在零温漂区,最终产生一个与温度无关的基准电流$I_{_{REF}}$。在CSMC 0.5$upmu$m CMOS工艺条件下,采用spectre软件进行了模拟验证。测试结果表明,在0℃ $sim$ 120℃的温度变化范围内,输出电流的波动小于4$upmu$A;当电源电压为3.3V时,整个电路的功耗仅为0.94mW。     

宽禁带半导体材料技术

宽禁带半导体材料是一种新型材料,具有禁带宽度大、击穿电场高、热导率高等特点,非常适合于制作抗辐射、高频、大功率和高密度集成电子器件;利用其特有的禁带宽度,还可以制作蓝光、绿光、紫外光器件和光探测器件,能够适应更为苛刻的生存和工作环境。在宽禁带半导体材料中,具有代表性的是碳化硅(SiC)、氮化镓(GaN)、氮化铝(AlN)、金刚石以及氧化锌(ZnO),综合叙述了这些材料的特性、发展现状和趋势;并介绍了SiC、GaN、ZnO材料的应用情况和代表性器件的研究进展。     

空芯光子带隙光纤在甲烷检测中的应用

以多段级联的空芯光子带隙光纤(PBF)作为气体传感探头,以谐波检测技术作为信号处理方法,构建了一种新型全光纤甲烷监测系统。分析了甲烷在空芯内的扩散特性,实现了传感气室的优化设计。实验结果证实了该传感头用于甲烷检测的可行性。     

一个1.2伏CMOS0.13微米工艺19.2毫瓦10位30兆采样率流水线模数转换器

A 10-bit 30-MS/s pipelined analog-to-digital converter (ADC) is presented. For the sake of lower power and area, the pipelined stages are scaled in current and area, and op amps are shared between the successive stages. The ADC is realized in the 0.13-μ m 1-poly 8-copper mixed signal CMOS process operating at 1.2-V supply voltage. Design approaches are discussed to overcome the challenges associated with this choice of process and supply voltage, such as limited dynamic range, poor analog characteristic devices, the limited linearity of analog switches and the embedded sub-1-V bandgap voltage reference. Measured results show that the ADC achieves 55.1-dB signal-to-noise and distortion ratio, 67.5-dB spurious free dynamic range and 19.2-mW power under conditions of 30 MSPS and 10.7-MHz input signal. The FoM is 0.33 pJ/step. The peak integral and differential nonlinearities are 1.13 LSB and 0.77 LSB, respectively. The ADC core area is 0.94 mm².