基于新型非制冷IRFPA读出电路的带隙基准源

设计了一种用于新型非制冷IRFPA读出电路的低温漂的低压带隙基准电路.提出了同时产生带隙基准电压源和基准电流源的技术,通过改进带隙基准电路中的带隙负载结构以及基准核心电路,基准电压和基准电流可以分别进行温度补偿.在0.5 μm CMOS N阱工艺条件下,采用spectre进行模拟验证.仿真结果表明,在3.3 V条件下,在-20℃～100℃范围内,带隙基准电压源和基准电流源的温度系数分别为35.6×10-6℃-1和37.8×10-6℃-1.当电源电压为3.3V时,整个电路的功耗仅为0.17mW.     

Design of pseudo-ternary and quaternary alloys by superlattices consisting of (zn,cd)(s,se) binary ii–vi compounds

Theoretical design of pseudo-ternary and quaternary alloys by superlattice structures consisting of (Zn,Cd)(S,Se) binary II–VI compounds has been studied. For pseudo-ternary ZnCdS and ZnCdSe alloys, the superlattices with two layers in a cycle, i.e., ZnS/CdS and ZnSe/CdSe are considered, and for pseudo-quaternary ZnCdSSe alloy, the two superlattice structures with more than two layers in a cycle are considered. In order to design and evaluate these superlattices, the expression for the equilibrium in-plane lattice constant of these superlattices has been derived by minimizing the total elastic strain energy in the cycle. The combinations of layer thicknesses in a cycle and the effective bandgap of these superlattices have been calculated while the elastic strain effect was included. The usefulness of these superlattice structures has been evaluated.     

Recent progress in high efficiency polymer solar cells by rational design and energy level tuning of low bandgap copolymers with various electron-withdrawing units

AbstractThis review collects recent five-year publications on low bandgap semiconducting polymers, which are composed of electron donor (D) and electron acceptor (A) units, exhibiting the power conversion efficiency (PCE) higher than 6%. When the photovoltaic performances of different types of D−A semiconducting copolymers are compared after the copolymers are classified into several categories according to the type of A-units, it is realized that diketopyrrolopyrrole (DPP)-based copolymers exhibit high J_SCs owing to low bandgaps and low V_OCs due to high-lying HOMO levels, while thienopyrroledione (TPD)-based copolymers exhibit high V_OCs due to their deep HOMO levels and low J_SCs because of wide bandgaps. Benzothiadiazole- and thienothiophene-based copolymers show intermediate values of V_OC and J_SC between DPP- and TPD-based ones. For further enhancement of photovoltaic performance, DPP-based copolymers may be designed to have deeper HOMO level with the minimum widening of bandgap while TPD-based polymers may be designed to have lower bandgap with the minimum rise of HOMO level. Hence, the energy level tuning must be considered so as to minimize the adverse effect.     

一个1.2伏CMOS0.13微米工艺19.2毫瓦10位30兆采样率流水线模数转换器

A 10-bit 30-MS/s pipelined analog-to-digital converter (ADC) is presented. For the sake of lower power and area, the pipelined stages are scaled in current and area, and op amps are shared between the successive stages. The ADC is realized in the 0.13-μ m 1-poly 8-copper mixed signal CMOS process operating at 1.2-V supply voltage. Design approaches are discussed to overcome the challenges associated with this choice of process and supply voltage, such as limited dynamic range, poor analog characteristic devices, the limited linearity of analog switches and the embedded sub-1-V bandgap voltage reference. Measured results show that the ADC achieves 55.1-dB signal-to-noise and distortion ratio, 67.5-dB spurious free dynamic range and 19.2-mW power under conditions of 30 MSPS and 10.7-MHz input signal. The FoM is 0.33 pJ/step. The peak integral and differential nonlinearities are 1.13 LSB and 0.77 LSB, respectively. The ADC core area is 0.94 mm².     

一种用于新型非致冷红外焦平面阵列读出电路的基准电流源

设计了一种用于新型非制冷红外焦平面阵列读出电路的低温漂、无电阻基准电流源。首先通过二阶补偿的无电阻带隙基准电路得到基准电压$V_{_{REF}}$,然后将其接到一个NMOS输出管上;通过调节$V_{_{REF}}$使得该输出管工作在零温漂区,最终产生一个与温度无关的基准电流$I_{_{REF}}$。在CSMC 0.5$upmu$m CMOS工艺条件下,采用spectre软件进行了模拟验证。测试结果表明,在0℃ $sim$ 120℃的温度变化范围内,输出电流的波动小于4$upmu$A;当电源电压为3.3V时,整个电路的功耗仅为0.94mW。     

空芯光子带隙光纤在甲烷检测中的应用

以多段级联的空芯光子带隙光纤(PBF)作为气体传感探头,以谐波检测技术作为信号处理方法,构建了一种新型全光纤甲烷监测系统。分析了甲烷在空芯内的扩散特性,实现了传感气室的优化设计。实验结果证实了该传感头用于甲烷检测的可行性。     

硼，氮共掺碳纳米管的第一性原理研究

小管径单壁碳纳米管因为曲率效应和局部效应的影响,有着不同的电学性能。传统的密度泛函计算并不能完全处理这些影响因素,但是杂化泛函计算却可以。我们通过HSE杂化泛函计算研究了（2,3）碳纳米管共掺杂不同浓度的氮,硼原子,发现了能隙和一些其他性质均随着掺杂成分的改变而发生振荡变化。我们的研究阐明了对小管径纳米管性质的认识。这对设计新型纳米电子设备有潜在作用。     

宽禁带半导体SiC功率器件发展现状及展望

碳化硅(SiC)是第三代半导体材料的典型代表,也是目前晶体生长技术和器件制造水平最成熟、应用最广泛的宽禁带半导体材料之一,是高温、高频、抗辐照、大功率应用场合下极为理想的半导体材料.文章结合美国国防先进研究计划局DARPA的高功率电子器件应用宽禁带技术HPE项目的发展,介绍了SiC功率器件的最新进展及其面临的挑战和发展前景.同时对我国宽禁带半导体SiC器件的研究现状及未来的发展方向做了概述与展望.     

Extending transmission bandwidth of air-core photonic bandgap fibers

Air-core photonic bandgap fibers offer many unique properties and are critical to many emerging applications. A notable property is the high nonlinear threshold which provides a foundation for applications at high peak powers. The strong interaction of light and air is also essential for a number of emerging applications, especially those based on nonlinear interactions and spectroscopy. For many of those applications, much wider transmission bandwidths are desired to accommodate a wider tuning range or the large number of optical wavelengths involved. Presently, air-core photonic bandgap fibers have a cladding of hexagonal lattice. The densely packed geometry of hexagonal stacking does not allow large nodes in the cladding, which would provide a further increase of photonic bandgaps. On the other hand, a photonic cladding with a square lattice can potentially provide much larger nodes and consequently wider bandgap. In this work, the potentials of much wider bandgap with square lattice cladding is theoretically studied and experimentally demonstrated.     

Junction-temperature estimation in AlGaInP light-emitting diodes using the luminescence spectra method

This study proposes a practical method to estimate the junction temperature of AlGaInP LEDs using the luminescence spectra method. The peak wavelength shift of LEDs is due to the energy band gap shrinking. The temperature dependence of the bandgap of AlGaInP LEDs is derived from those of the underlying binary compounds AlP, GaP, and InP. Based on this, a theoretical model for the dependence of the peak wavelength on junction temperature is developed. Experimental results on the junction temperature of AlGaInP red light-emitting diodes are presented. Excellent agreement between the theoretical and experimental temperature dependence of the peak wavelength is found.