宝钢不锈钢冷轧厂光平整液废水处理系统

介绍了一套完全崭新的工艺用于热镀锌机组排放的光整液及碳钢连退机组排放的平整液废水处理系统。该工艺采用均质调节池—pH中和罐—溶气气浮—冷却塔—EGSB—MBR装置。该工艺流程很好地解决了钢铁行业冷轧厂的光平整液废水处理这一大难题。     

以系统的理念,有效防治建筑裂渗病害

分析了导致建筑渗、漏、裂质量问题的主要原因;指出建筑渗、漏、裂问题很大程度上与业界过于依赖以物理屏障将水隔绝或封堵的技术理念有很大关系;提出要以系统的理念处理好建筑的渗、漏、裂质量问题.     

Dopant segregation in SOI Schottky-barrier MOSFETs

We present experimental results on silicon-on-insulator Schottky-barrier MOSFETs with fully silicided NiSi source and drain contacts. Dopant segregation during silicidation was used to improve the device characteristics: on-currents, significantly higher than without dopant segregation as well as an almost ideal off-state are demonstrated in n-type as well as p-type SB-MOSFETs. Temperature dependent measurements show that the effective Schottky-barrier height in devices with segregation can be strongly lowered. In addition, we investigate the dopant segregation technique with simulations. Comparing simulations with experiments it turns out that the spatial extend of the segregation layer is on the few nanometer scale which is necessary for ultimately scaled devices. Furthermore, the use of ultrathin-body SOI in combination with ultrathin gate oxides results in an even further increased transmission through the Schottky barriers and consequently leads to strongly improved device characteristics. As a result, the dopant segregation technique greatly relaxes the requirement of low Schottky-barrier silicides for high performance transistor devices.     

裸眼3D显示液晶光栅贴合控制参数设计与实现

文章根据视差液晶光栅立体显示原理和莫尔条纹形成规律．提出了一种视差液晶光栅贴合控制参数的设计规则及工艺指导方式。通过对实际产品立体效果的影响分析。得出了设计控制的关键因素：贴合间隙的厚度和光栅与显示屏之间贴合允许最大倾斜角度,根据贴合允许的最大倾斜角度推导出了贴合对位标记垂直方向上的最大允许误差。实验验证和量产实践表明,文中提出的理论和方法能很好地应用于裸眼3D显示液晶光栅贴合控制的设计与量产工艺控制。     

CF4预处理后热生长薄栅氧漏电流及势垒研究

嵌入式Flash Memory要求低的工作电压．采用反应离子刻蚀技术，用CF4气体在低功率下对硅片做预处理，再热生长薄氧化层，从而在氧化层中引入F，降低氧化层势垒:势垒高度从3.05eV降低到2.5eV，隧穿电流增加，从而可以在低压下提高Flash Memory的编程效率．     

Endo/Lysosome‐Escapable Delivery Depot for Improving BBB Transcytosis and Neuron Targeted Therapy of Alzheimer's Disease

The effective treatment of Alzheimer's disease (AD) is hindered due to the hard blood–brain barrier (BBB) penetration and non‐selective distribution of drugs in the brain. Moreover, the complicated pathological mechanism of AD involves various pathway dysfunctions that limit the effectiveness of a single therapeutic drug. Herein, a dendrigraft poly‐l ‐lysines (DGL)‐based siRNA and D peptide (Dp) loaded nanoparticle is designed that could target and penetrate through the BBB, enter the brain parenchyma, and further accumulate at the AD lesion. In this system, T7 peptide, which specifically targets transferrin receptors on the BBB, is linked to DGL via acid‐cleavable long polyethylene glycol (PEG) to achieve high internalization, quick escape from endo/lysosome, and effective transcytosis. Then, the Tet1, which specifically targets diseased neurons, is modified onto DGL by short PEG. After being exposed, Tet1 could drive the nanoparticles to the AD lesion and release the drugs. As a result, the production of β amyloid plaques (Aβ) is inhibited. Neurotoxicity induced by Aβ plaques and tau proten phosphorylation (p‐tau) tangle is also alleviated, and the cognition of AD mice is significantly improved. Overall, this system programmatically targets BBB and neurons, thus, significantly enhances the intracephalic drug accumulation and AD treatment efficacy.     

AlInGaN量子阱垒层材料的优化

采用k·p方法理论,考虑了极化电场和自由载流子重新分布等因素,通过薛定谔方程和泊松方程自洽求解得到InGaN/AlInGaN,InGaN/GaN,InGaN/InGaN,InGaN/AlGaN量子阱导带和价带的能带结构,并由此计算了不同量子阱结构的自发发射谱.分析对比发现AlInGaN材料特有的自发极化和压电极化效应在阱垒界面处形成的极化电荷对量子阱发光特性有重要的影响.以AlInGaN为垒,优化其中各元素的组分可以减小极化电场的影响,提高量子阱自发发射谱强度.同时,综合考虑了极化电荷和势垒高度的影响,提出了具体的优化方法,并给予了物理解释.     

量子阱材料折射率低偏振相关性研究

分析了阱宽、垒高和应变对量子阱材料TE模和TM模折射率的影响,并剖析了其中的物理机理.研究表明:对于量子限制效应带来的量子阱折射率偏振相关性,阱宽越小或垒高越高,折射率偏振相关性越大.压应变增大时,折射率偏振相关性增大,张应变可以克服量子限制效应带来的折射率偏振影响.对于不同阱宽和垒高的量子阱,均存在合适的张应变量使折射率偏振相关性最小,且阱宽越小或垒高越高所需的张应变量越大.根据以上分析,提出量子阱材料折射率低偏振相关设计方法,并据此设计出C波段(1 530～1 565 nm)内折射率低偏振相关(小于0.03)的量子阱材料In0.49Ga0.51As/In0.77Ga0.23As0.5P0.5.研究结果有助于优化设计光网络中关键器件.     

FPGA-based test bed for measurement of AM/AM and AM/PM distortion and modeling memory effects in RF PAs

Using a field-programmable gate array (FPGA) development board, a digital signal processor (DSP) builder, and the phase-to-amplitude conversion principle, a low-cost system for measuring the amplitude-to-amplitude (AM/AM) and amplitude-to-phase (AM/PM) distortion curves of radio frequency (RF) power amplifiers (PAs) is presented. The state of the art based on the measurements and preliminary studies of AM/AM and AM/PM distortion curves is discussed. A full digital control of the test bed simulated/emulated in Matlab/Simulink is introduced to recalculate the known AM/AM and AM/PM measurements stored as look-up table (LUT). Finally, the low-cost system comprises the memory polynomial model (MPM) that involves the nonlinearity order and memory effects of real PAs.     

Highly reliable hybrid nano-stratified moisture barrier for encapsulating flexible OLEDs

Herein, a novel thin-film encapsulation for flexible organic light-emitting diodes (FOLEDs) is proposed, and its long-term reliability in tensile stress conditions was tested. The hybrid nano-stratified moisture barrier consists of 2.5 dyads of an Al₂O₃/ZnO nano-stratified structure and a S-H nanocomposite organic layer. The nano-stratified structure is prepared by low-temperature atomic layer deposition and the S-H nanocomposite by spin-coating at a thickness of 30 and 120 nm, respectively. An optical transmittance of 89.05% was measured with the 2.5-dyad hybrid nano-stratified moisture barrier with a total thickness of 330 nm. A low water vapor transmission rate (WVTR) of 1.91 × 10⁻⁵ g/m²day was recorded based on an electrical Ca test at 30 °C and 90% R.H. without losing its properties after a bending test. With this highly reliable hybrid nano-stratified moisture barrier, FOLEDs were successfully encapsulated. After 30 days under conditions of 30 °C and 90% R.H. with tensile stress, the J-V-L performances of the FOLEDs were comparable to those of the initial state without dark spots. These results suggest that this hybrid nano-stratified moisture barrier is an excellent method for encapsulating FOLEDs.