Morphology of Inductively Coupled Plasma Processed HgCdTe Surfaces

Inductively coupled plasma (ICP) processing has become the industrial processing standard for HgCdTe and its related II–VI compounds. In this study ICP processes were developed that allow several microns of HgCdTe to be plasma etched while maintaining a low root-mean-square (RMS) roughness, and even improving the surface roughness in the case of HgCdTe-on-Si. These ICP processes are superior to older electron cyclotron resonance (ECR) plasma etches. The resulting ICP plasma processed surfaces are oxygen and carbon free, have a good reflection high-energy electron diffraction (RHEED) pattern, and have only a small amount of mercury depletion, x = 0.22 to 0.47 (where x is the ratio of Cd to␣Hg), in the first 25 ? to 30 ? of the HgCdTe. Nanofeatures of the as-grown HgCdTe are retained during the process and are believed to be indicative of the fundamental defect mechanisms in the different HgCdTe etched surfaces. Results from these experiments strongly suggest that ICP plasma processes can be used to delineate pixels, etch vias, clean surfaces, and even produce epi-ready surfaces that would allow HgCdTe to become much more manufacturable, and perhaps allow the replacement of wet processing in HgCdTe.     

低缺陷密度和平整表面的硅基砷化镓外延

Device-quality GaAs thin films have been grown on miscut Ge-on-Si substrates by metal-organic chemical vapor deposition. A method of two-step epitaxy of GaAs is performed to achieve a high-quality top-layer. The initial thin buffer layer at 360 ℃ is critical for the suppression of anti-phase boundaries and threading dislocations. The etch pit density ofGaAs epilayers by KOH etching could reach 2.25 × 10^5 cm^-2 and high-quality GaAs top epilayers are observed by transmission electron microscopy. The band-to-band photoluminescence property of GaAs epilayers on different substrates is also investigated and negative band shifts of several to tens of meVs are found because of tensile strains in the GaAs epilayers. To achieve a smooth surface, a polishing process is performed, followed by a second epitaxy of GaAs. The root-mean-square roughness of the GaAs surface could be less than 1 nm, which is comparable with that of homo-epitaxial GaAs. These low-defect and smooth GaAs epilayers on Si are desirable for GaAs-based devices on silicon substrates.     

弯曲悬臂梁静电执行器驱动特性的实验研究

研究了一种弯曲悬臂梁静电执行器。该悬臂梁一端固支 ,另一端自由翘离基底。在静电力作用下 ,悬臂梁粘连的位置和长度会改变 ,使得执行器的电压 位移特性严重依赖加载历史。研究了在不同电压加载方式下 ,悬臂梁粘连点、端部位移的变化 ,以及这种变化对驱动电压的影响。实验研究了悬臂梁在方波电压下的振动 ,并设计实验系统测量了吸下和弹起时间     

激光和CCD快速自动测量车身曲面的研究

根据光学三角测量原理提出一种应用激光和CCD光电子技术非接触车身曲面快速自动跟踪曲面轨迹的等距离随动测量方法。并对实际轿车模型作了实验测量。     

弯晶谱仪在X射线探测中的应用

为了对激光等离子体进行诊断,研制了聚焦型椭圆弯晶谱仪用来探测等离子体辐射的X射线.谱仪利用从椭圆一个焦点发射出的光线经椭圆面反射必汇聚于另一焦点的性质而研制,椭圆的离心率和焦距分别为0.9586mm及1350mm.在此采用氟化锂(200)(2d=0.4027nm)作为晶体分析器,其布拉格衍射角变化范围为30～67.5°,可探测波长范嗣为0.2～O.37nm.在"神光-Ⅱ"激光装置上进行了打靶实验,利用软X射线CCD相机作为摄谱器件,该谱仪获得了钛的类He共振线(w)、磁四级M2跃迁x线、互组合跃迁y线、禁戒谱线(z)以及类Li谱线(q).实验结果表明该谱仪的最高光谱分辨率(λ/△λ)可以达到1000以上,能够用于激光等离子体X射线光谱学研究.     

从明暗恢复形状问题中的一种分形约束方法探讨

本文提出一种由从明暗恢复自然景物表面三维形状的一种表面约束方法.该方法从传统约束条件的分形本质出发,克服了传统表面恢复方法造成恢复结果过分平滑而失真的缺点,并利用最大后验概率方法对物体表面高度函数进行Gibbs随机采样,从而得到待恢复表面三维形状的一个最佳实现.实验结果表明了本文方法的有效性.     

实体造型中一种等距曲面求交优化算法

主要针对实体造型系统中曲面求交，通过分析连续变化曲的等距曲面的特征信息，提取连续变化曲面不同瞬间交线环的相关性，并使用特征点来标识交线环的拓扑信息，将拓扑信息和跟踪法结合，设计了一种优化的等距曲面求交算法。     

大曲面检测技术研究

大曲面的检测对于三坐标测量机是一个难题,以电子经纬仪作为传感器的工业测量是一种新的方法,可以解决这个难题.这种测量属于非接触测量,因此被测工件的状态是不受约束的.另外一个优点是它可以在较大的测量范围内达到较高的测量精度.在本文中,检测了处于架设状态下的大曲面,同时研究了相关的检测技术.由于直接得到的测量结果是采样点的三维坐标,所以首先需要分析其坐标与被检测量之间的关系,根据曲面的特征,其坐标偏差的标准偏差值作为评价型面质量的参数;然后建立相应的检测系统.在建立的过程中,需要考虑检测精度和曲面与经纬仪的位置关系.检测结果表明,这些技术可以实现对大曲面的高精度检测,并且具有广泛的应用前景.     

基于解空间划分的工艺参数曲面压缩算法

为了使得工艺参数表能精确表征参数曲面并且足够简练,本文提出了一种基于参数表解空间划分的工艺参数曲面压缩算法,算法首先把参数表所有可能的子参数表按度数和是否相等划分成多个子参数表集合,然后找出每一个子参数表集合中密度和最大的子参数表组成一个新的子表集合S,最后从S中找出插值误差最小的子表.实验表明算法不仪提高了参数表的压缩速度,而且误差小,说明算法是有效的.     

基于曲量场空间的车牌定位与识别

提出了一种新的采用曲量场空间描述的车牌定位与识别算法.该算法首先在彩色车牌图像中进行亮度扫描,然后拟合渐变梯度向量,并以曲量子进行点阵描绘并消除彩色信息,最后以采样的曲量子群分别融合成车身、车牌及字符的曲量子空间,将融合的车牌、字符曲量子空间进行边缘曲量子的光滑衔接组成曲量场并提取场内曲量的空间数据及其曲量约束信息进行...