Symmetry properties and bifurcation analysis of a class of periodically forced chemical reactors

In this work, we discuss how periodic forcing may induce symmetry properties into mathematical models of chemical reactors. We define a class of reactors subjected to discontinuous periodic forcing, and show that all the reactors belonging to this class have spatio-temporal symmetry. This symmetry and its influence on the possible bifurcation scenarios are discussed. The bifurcation analysis is carried out with suitable discrete systems that exploit a property of the Poincaré map. In fact, it is shown that the spatio-temporal symmetry induced by the forcing makes the Poincaré map of the continuous system an iterate of another map. On this basis, a technique to implement parameter continuation methods is proposed. With such a technique, it is also possible to characterize symmetric and nonsymmetric regimes and unstable limit sets otherwise undetected with “bruteforce” approaches. Examples for reverseflow reactors and networks of n-reactors with periodically switched feed and discharge positions are presented.     

Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N₂O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried ammonia using nitrogen (N₂) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface. Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N₂O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations in the range of 4×10¹⁶ cm⁻³ to 4×10¹⁸ cm⁻³ as measured by Hall effect. The observed carrier concentration increased with increasing N₂O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B exciton emission an exciton bound to a shallow donor. With increasing N₂O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons. These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius and electronegativity arguments.     

江垭大坝10号坝段裂缝加固处理

湖南省江垭大坝10号坝段由于温度变化影响及该坝段坝型狭高,出现了两条内裂缝和不密实混凝土所构成的渗水通道.经过前期勘探后,在采取了有效的安全监测措施下,运用了化学灌浆和超细水泥灌浆进行了加固处理,灌区混凝土体疏松区与裂缝得到了有效充填,混凝土体完整性得到了很大改善,经压水试验检查完全满足预期要求,达到了加固处理的目的.     

光学活性物质的工业生产方法

本文介绍了光学８活性牺牲垢几种工业规模的生产方法及最新的进展，分析了各种方法的特点及存在的问题。     

溶胶－凝胶二氧化硅驻极体薄膜的物理化学改性

实验研究了由溶胶－凝胶法制备二氧化硅驻极体薄膜的工艺。用红外透射谱、扫描电子显微镜以及驻极体等温表面电位测量和热刺激放电等实验考察了热处理和化学表面修正两个关键工艺对溶胶－凝胶二氧化硅样品驻极体性能的影响。结果表明经过高温条件下一定时间的热处理和化学表面修正，可以制备出性能优良的驻极体薄膜     

含油废水处理

在水量水质调查的基础上，本文提出了以出水回用为目的的含油废水隔油调节沉淀－混凝沉淀－砂滤处理工艺，动态模型试验表明，废水中油和ＣＯＤ的去除率分别达到９５％和９０％，出水浊度低于２，此水质完全可回用于有关生产车间。     

In Situ FTIR Study of the Formation of an Organosilane Layer at the Silica/Solution Interface

An FTIR experiment especially designed to study the growth of an organosilane layer at the interface between a solution and a flat silica surface is presented. High sensitivity is achieved by using the attenuated total reflection (ATR) technique in a liquid flow cell. The ATR crystal, either silicon or germanium, is covered with a very thin silica layer. Chemical reactions of a mono-and a di-hydrolyzable silane with the silica substrate have been investigated. The grafting of a submonolayer of the first reagent has been monitored by following the C-H and SiO-H vibrations. The density of grafted molecules has been estimated and information on the nature of the chemical bonding has been achieved. Evidence for the chain-polymerization of the dihydrolyzable silane at the substrate/solution interface has been inferred from the appearance of a Si-O-Si absorption band.     

Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition

CdTe epilayers were grown directly on (100), (211), and (111) silicon substrates by metalorganic chemical vapor deposition (MOCVD). The crystallinity and the growth orientation of the CdTe film were dependent on the surface treatment of the Si substrate. The surface treatment consisted of exposure of the Si surface to diethyltelluride (DETe) at temperatures over 600°C prior to CdTe growth. Direct growth of CdTe on (100) Si produced polycrystalline films whereas (lll)B single crystals grew when Si was exposed to DETe prior to CdTe growth. On (211) Si, single crystal films with (133)A orientation was obtained when grown directly; but produced films with (211)A orientation when the Si surface was exposed to DETe. On the other hand, only (lll)A CdTe films were possible on (111) Si, both with and without Te source exposure, although twinning was increased after exposure. The results indicate that the exposure to a Te-source changes the initial growth stage significantly, except for the growth on (111) Si. We propose a model in which a Te atom replaces a Si atom that is bound to two Si atoms.     

30CrMnsi联接环断裂失效分析

对断裂的联接环进行了化学成分、机械性能、显微组织核验，指出回火工艺不当、锻造缺陷以及原材料化学成分不合格，是造成断裂事故的主要原因．在此基础上．提出了改进措施．     

专家系统在化工中的应用进展

本文综述了近年来专家系统在化工领域的应用状况，并指出今后的发展趋势。