Strain from modified interface compositions in InGaAs/InP superlattices

Thin strained regions have been inserted at the interfaces of lattice-matched InGaAs/lnP superlattices to assess growth conditions for tailoring of localized compositional changes and for studying As-P intermixing behavior during heterojunction growth. Also, precise growth rates of binary composition layers were determined from specially designed superlattices using strained layers of common anion compounds inserted periodically into InP and GaAs. Growth rates of fractional monolayers are found to be identical to thick layer growth rates. When thin InAs, GaAs, GaP, ALAs, or AIP layers were inserted at the InGaAs/lnP heterojunctions, the measured strain at either one or both interfaces was equal to the strain predicted from the growth rate x time product. Excess strain seen in some cases is due to a change in As-P intermixing and this component can be separated from the predicted strain. Insertion of Ga-compounds at the InP-grown-on-InGaAs interface causes interface roughening which degrades the superlattice. For all other compositions the thin, highly strained regions are not detrimental to the crystalline quality of the periodic structure.     

煤化工石脑油作为乙烯裂解原料的技术分析

由物性分析可知,煤化工石脑油中易裂解的链烷烃含量高(90%(w)),环烷烃、芳烃含量较低,芳烃潜含量低;结合860~900℃下裂解气/液相产物收率对比可知,煤化工石脑油为优质裂解原料,适宜在高温(900℃)下进行裂解;随着裂解温度升高,裂解液相收率降低,液相中芳烃含量提高,裂解液相以C_5~205℃组分为主(75%(w)),苯、甲苯、二甲苯合计占70%(w)以上。与炼厂拔头油、石脑油相比,煤化工石脑油价格低、产量将逐年增加,裂解乙烯、三烯收率高而液相产物收率略低,因此,煤化工石脑油作为乙烯企业原料结构的合理补充,将是解决乙烯原料短缺和提升煤炭资源深加工经济效益的新路径。     

Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N₂O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried ammonia using nitrogen (N₂) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface. Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N₂O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations in the range of 4×10¹⁶ cm⁻³ to 4×10¹⁸ cm⁻³ as measured by Hall effect. The observed carrier concentration increased with increasing N₂O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B exciton emission an exciton bound to a shallow donor. With increasing N₂O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons. These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius and electronegativity arguments.     

Study of indium droplets formation on the InxGa1−xN films by single crystal x-ray diffraction

Indium droplet formation during the epitaxial growth of In_xGa_1−xN films is a serious problem for achieving high quality films with high indium mole fraction. In this paper, we studied the formation of indium droplets on the In_xGa_1−xN films grown by metalorganic chemical vapor deposition (MOCVD) using single crystal x-ray diffraction. It is found that the indium (101) peak in the x-ray diffraction spectra can be utilized as a quantitative measure to determine the amounts of indium droplets on the film. It is shown by monitoring the indium diffraction peak that the density of indium droplets increases at lower growth temperature. To suppress these indium droplets, a modulation growth technique is used. Indium droplet formation in the modulation growth is investigated and it is revealed in our study that the indium droplets problem has been partially relieved by the modulation growth technique.     

聚乙二醇二甲醚的物化性质

收集整理了聚乙二醇二甲醚的各项物化性质数据,并给出若干图表,可供天然气净化厂、城市煤气净化厂、石油化工厂、炼油厂、合成氨厂等有关气体净化的设计、科研和生产管理人员使用。     

大港油田官109-1断块稠油油藏碱/表面活性剂吞吐采油技术

大港油田官109-1断块稠油油藏的油井由于井筒、近井地带发生原油有机沉积,储层原油流动性差,采用多种方法都不能正常生产。为此研制了一种碱性解堵液,用于油井化学吞吐。该解堵液为复配碱和抗硬剂等添加剂的10%两性木质素表面活性剂溶液,能使玻璃片表面由亲油变强亲水,在石英上的接触角为6°(稀释至1/2和1/4浓度时为11°和12°),与羊大站原油间的界面张力为1.75×10-3~3.18×10-3mN/m。该解堵液与黏度1~50 Pa.s的不同区块稠油按体积比1∶1混合形成的乳状液,60℃、175 s-1黏度为2~6 mPa.s,在配液水矿化度高达6000mg/L以上或钙镁离子浓度高达250 mg/L时,该解堵液仍能保持对稠油的乳化降黏能力。该解堵液从实验岩心中驱出的原油量比地层水多75%,驱出液为乳状液。通过一个井例介绍了化学吞吐工艺:先用一种降黏解堵液对油井进行预处理,清洗油管、炮眼及近井地带,再注入碱性解堵液(该井例中为500 m3),注入时间约15小时,然后开井生产。2000年2月至2002年6月在16口新投产井实施化学吞吐(第一轮次),15口井有效,其中2口井先后转注水,其余13口井到2005年底仍继续产油。图1表6参5。     

改性不饱和聚脂先期防砂工艺技术在临盘油田的应用

介绍了一种应用于油气田油水井先期防砂的新型化学溶液防砂技术。简要分析了其固砂机理和工艺过程。室内试验和临盘油田102井次现场应用表明,该防砂技术安全可靠,施工成功率100％,现场施工简便易行且有效期长,经济效益和社会效益显著,值得推广应用。     

井下注剂用小直径管起下装置的研制

针对目前国内小直径管井下注剂设备配套工具不完整,不能满足现场使用要求的情况,研制了井下注剂用小直径管起下装置。该装置采用可正反向旋转的液马达驱动主轴的方案,通过同步齿轮带动链条,夹紧机构使链条上的夹块夹住小直径管,由液压系统实现整个操作与控制,从而使装置上下运动。井场模拟试验表明,井下注剂用小直径管起下装置可完全满足小直径管起下作业的要求,且可避免小直径管管体的变形和损坏。     

铝钛共渗钢的研制与工业应用

介绍了开发的铝钛共渗工艺及其特点,该工艺可根据需要调整渗剂配方,实现渗钛或铝钛共渗.研究了一种封闭剂,重点解决了渗剂高温氧化烧结问题,使渗层质量优良、性能稳定.描述了铝钛共渗层的特征和焊接性能及耐腐蚀效果.在中国石化扬子石油化工股份有限公司炼油厂的应用表明,铝钛共渗钢具有良好的抗低温H2S腐蚀的能力,并具有优良的耐冲刷、耐磨蚀性能.     

化学事故危害评估

根据化学事故危害的主要影响因素对化学事故进行危害评估,考查了危害纵深、人员杀伤率、危害地域估算、爆炸燃烧事故危害等内容。