基于复数主成分分析的磁共振波谱信号衰减系数的自动校正

衰减系数的校正是磁共振波谱信号处理和分析过程中的一个关键难题。本文基于复数主成分分析，提出了一种自动的磁共振波谱衰减系数的校正方法，较成功地解决了这个难点问题。文中的模拟数据及其实现结果充分验证了该方法的有效性。     

实炉底节能连续式加热炉

轧钢生产使用实炉底连续式加热炉加热钢坯，炉内双纵滑管用耐热耐高温材料，无水冷，起到节约水、电的作用，达到节能增效的目的。     

电工实践教学改革与实践

电工实践教学是培养大学生电类工程能力的重要环节，本文介绍我们以培养人才为中心在电工实习基地建设；实践教学内容，方法和手段等方面进行的改革与实践。     

85W／90卡车手动变速箱油的研制

介绍８５Ｗ／９０卡车手动变速箱油的组分和添加剂，提出符合８５Ｗ／９０粘度级别的基础油，讨论影响８５Ｗ／９０卡车手动变速箱油性能的各种因素，给出符合８５Ｗ／９０卡车手动变速箱油规格的油品配方。     

Voigt线型及其精确快速算法

通过把上半复平面分为４个区，并在每一区利用不同近似，建立了一种精确快速计算Ｖｏｉｇｔ函数、修正的Ｖｏｉｇｔ函数和Ｖｏｉｇｔ函数偏导数的算法，其最大相对误差小于５×１０－４．该算法是Ｌｉｎｅ－ｂｙ－Ｌｉｎｅ大气透过率／辐射强度计算及其相关应用的有效算法．     

复射线展开法分析圆柱面对平面波散射的精度问题

讨论了用复射线展开法计算圆柱面对入射平面波散射时的计算误差特性，提出了控制其计算精度的复射线展开参数选择方法，证实了通过恰当选择展开参数可以有效地提升计算精度、实现误差控制。     

提高曲面近似展开精度的方法与实现

通过对不可展曲面近似展开精度的研究，提出了根据曲面曲率的大小对曲面自动进行网格划分，通过对综合展开误差数据场进行数据拟合来选取最优展开基点，基于空间曲面与其展开图间近似的等距变换关系进行展开样形的误差矫正等3种方法，这几种方法的实现在不同程度上有效地减小了曲面的近似展开误差，提高了曲面的近似展开精度。     

复合功能原理方案特征建模及其求解过程研究

研制了驱动、传动和分离等典型功能原理方案解的知识库，建立了复合功能产品原理解的特征模型，提出了复合功能原理求解的通用进`生平注解和接口匹配并行的策略，进而提出原理解接口特征的嵌套结构及其匹配进程，开发了一个复合功能产品原理方案求解的计算机支持平台，进行了实例验证。     

Posttraumatic stress in children and adolescents exposed to family violence: I. Overview and issues.

Exposure to child physical abuse and parents' domestic violence can subject youth to pervasive traumatic stress and can lead to posttraumatic stress disorder (PTSD). This article presents evolving conceptualizations in the burgeoning field of trauma related to family violence exposure and describes how the often repeating and ongoing nature of family violence exposure can complicate a PTSD diagnosis. In addition, recent literature indicates that children exposed to family violence may experience problems in multiple domains of functioning and may meet criteria for multiple disorders in addition to PTSD. Considerations salient to the recognition of traumatic stress in this population and that inform assessment and treatment planning are presented. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.