裂纹对石墨烯拉伸力学性能影响的数值仿真

为研究裂纹对石墨烯力学性能的影响,以锯齿型石墨烯为研究对象,基于分子动力学方法,采用Tersoff势函数分析裂纹长度对石墨烯拉伸力学性能的影响以及含有裂纹的石墨烯在不同应变率下的拉伸变形破坏过程.结果表明,裂纹长度的增加大大减小石墨烯的抗拉强度和抗拉应变,对弹性模量有一定影响;裂纹降低石墨烯的抗拉应变对应变率的敏感性,但对于含有裂纹的石墨烯,仍可以增大加载速率来提高石墨烯的抗拉性能.     

避雷器接地电阻的测量与预测方法

介绍了避雷器三极法测量接地电阻的接线、测量原理及测量电压的选取,根据测得的历史数据建立了基于回归分析的接地电阻变化趋势预测模型,并通过标准离差检验证明了该预测模型可用于实际接地电阻的预测。实践表明,该测量与预测方法切实可行,能在一定程度上避免因接地电阻超标而引发的雷击事故。     

液压支架工作状态模糊识别系统研究

针对目前综采工作面液压支架压力监测系统只能监测综采工作面压力,不能对液压支架工作状态进行识别的问题,设计了一种液压支架工作状态模糊识别系统。该系统可对现有的综采工作面液压支架压力监测系统监测到的压力数据进行模糊识别,根据模糊识别输出值即可判断液压支架的5种工作状态,即降架、移架、升架、增阻、卸压保持;当液压支架处于增阻工作状态且增阻时间过长时,该系统可及时通知液压支架操作工增大液压支架压力,辅助实现顶煤破碎。测试结果验证了该系统的可行性。     

Influence of base resistance on extracting thermal resistance for SiGe HBTs

In this article, the influence of base resistance on extracting thermal resistance for SiGe heterojunction bipolar transistors is studied and an improved approach for determining the junction temperature and thermal resistance is presented. The proposed method for extracting thermal resistance is based on the temperature sensitivity of the base–emitter (B–E) voltage when the device is biased with a fixed emitter current density. This approach not only takes into account the self‐heating during the different ambient temperature measurement but also revises the empirical equation of B–E voltage due to the influence of base resistance during the power dissipation increment measurement. Results are obtained for devices with different emitter lengths and fingers. Compared with the conventional method, the thermal resistance is about up to 15% improvement for the device with 0.3 × 1.9 μm² emitter area and 13.8% for the device with 0.3 × 13.9 μm² emitter area. The accurate thermal resistance implemented in HICUM model has resulted in better fit for transistor output characteristics. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2012.     

Ultrasonic crack characterization via a constrained inversion algorithm

The Kirchhoff approximation is used to show that the time domain impulse response of an isolated flat crack can be given a simple geometrical interpretation in terms of the derivative of a projected length function. For an elliptical crack, this derivative can be obtained explicitly to yield the two edge-diffracted waves which originate from the flashpoints of the crack. An explicit coordinate invariant expression is obtained from this elliptical crack solution which relates the time difference, t, between the arrival of these edge-diffracted waves and the crack size and orientation. Previously, we have proposed that this expression, together with t measurements in different scattering directions, could be used in a regression analysis as the basis for performing a constrained inversion of crack scattering data (i.e., where we attempt to obtain the best equivalent flat elliptical crack that fits the scattering measurements). Here we will demonstrate some results of applying the proposed algorithm using noisy synthetic data. The sensitivity of the results to both, number of measurements and transducer orientation, will be discussed.     

AN EXPERIMENTAL-NUMERICAL METHOD FOR MEASURING CRACK PROPAGATING VELOCITIES UNDER STRESS WAVE LOADING

An experimental-numerical method for measuring dynamic crack propagating velocities under stress wave loading is established in this paper. The experiments of the three-point bend specimen are done on the improved Hopkinson bar. Deflection of loading point, dynamic load and instantaneous crack length are measured, then crack propagating velocities are calculated. Experiments on 40Cr steel show that the results given by this method have a good agreement with that obtained by the resistance fracture gage method. Therefore this method is feasible for measuring crack propagating velocities under high loading rate and will have wide application.     

耐腐蚀摩托艇ADC12-0.5La铝合金微观组织及制备

为改善ADC12铝合金的耐腐蚀性能,通过超声熔铸法制备ADC12-0.5La铝合金,并利用光学显微镜、扫描电镜、能谱分析仪、硬度计、浸泡腐蚀试验和电化学工作站研究了T6热处理和稀土La改性对ADC12铝合金的微观组织、硬度和耐腐蚀性能的影响。结果表明,T6态ADC12-0.5La铝合金微观组织明显细化,α-Al尺寸减小,形貌变圆整,共晶Si相和AlFeMnSi相细化为短棒状。相比于ADC12铝合金,T6态ADC12-0.5La铝合金硬度达到117.7HV,提高了26.8%,腐蚀电流密度降低了10.7%,腐蚀电位上升了64.4%,腐蚀速率降低了54.4%,腐蚀表面平坦且光滑,表现为较轻微的晶间腐蚀。T6态ADC12-0.5La铝合金提高了腐蚀电位,Al-La-Cu稀土相阻碍了电子移动,铝合金的耐腐蚀性能得到大幅度提高。     

Characterization of blasted austenitic stainless steel and its corrosion resistance

It is known that the corrosion resistance of stainless steel is deteriorated by blasting, but the reason for this deterioration is not clear. A blasted austenitic stainless steel plate (JIS-SUS304) has been characterized with comparison to the scraped and non-blasted specimens. The surface roughness of the blasted specimen is larger than that of materials finished with #180 paper. A martensite phase is formed in the surface layer of both blasted and scraped specimens. Compressive residual stress is generated in the blasted specimen and the maximum residual stress is formed at 50–100 μm from the surface. The corrosion potentials of the blasted specimen and subsequently solution treated specimen are lower than that of the non-blasted specimen. The passivation current densities of the blasted specimens are higher those of the non-blasted specimen. The blasted specimen and the subsequently solution treated specimen exhibit rust in 5% sodium chloride (NaCl) solution, while the non-blasted specimen and ground specimen do not rust in the solution. It is concluded that the deterioration of corrosion resistance of austenitic stainless steel through blasting is caused by the roughed morphology of the surface.     

应变速率对中碳低温贝氏体钢强塑性的影响

摘要：为探索低温贝氏体钢的断裂行为,研究应变速率对低温贝氏体钢TRIP效应的影响,采用不同应变速率的拉伸试验对低温贝氏体钢的强塑性进行研究。利用扫描电镜（SEM）、透射电镜（TEM）及X射线衍射（XRD）等试验方法对低温贝氏体钢的微观组织、断口形貌及裂纹走向进行表征。结果表明,随着应变速率的提高,试验钢的屈服强度由771MPa上升至806MPa,抗拉强度由1554MPa上升至1606MPa,断后伸长率由13.5%下降至9.0%。主要原因是高应变速率拉伸引发的绝热温升抑制了残余奥氏体的马氏体相变,对试验钢塑性造成负面影响。     

FORMATION OF MANGANESE SILICIDE THIN FILMS BY SOLID PHASE REACTION

1. IntroductionThe transition metal silicides have attraeted much attention because of their potentialapplicatiOIl in very large scale integration (VLSI) de.ice[1]. Near-noble metal silicides canbe used as Schottky al1d ohn1ic col1tacts in silicon-based d…