A new monitoring system for piping systems in fossil fired power plants

A CEC-funded project has been performed to tackle the problem of producing an advanced Life Monitoring System (LMS) which would calculate the creep and fatigue damage experienced by high temperature pipework components. Four areas were identified where existing Life Monitoring System technology could be improved:

1. 1. the inclusion of creep relaxation

2. 2. the inclusion of external loads on components

3. 3. a more accurate method of calculating thermal stresses due to temperature transients

4. 4. the inclusion of high cycle fatigue terms.

The creep relaxation problem was solved using stress reduction factors in an analytical in-elastic stress calculation. The stress reduction factors were produced for a number of common geometries and materials by means of non-linear finite element analysis. External loads were catered for by producing influence coefficients from in-elastic analysis of the particular piping system and using them to calculate bending moments at critical positions on the pipework from load and displacement measurements made at the convenient points at the pipework. The thermal stress problem was solved by producing a completely new solution based on Green's Function and Fast Fourier transforms. This allowed the thermal stress in a complex component to be calculated from simple non-intrusive thermocouple measurements made on the outside of the component. The high-cycle fatigue problem was dealt with precalculating the fatigue damage associated with standard transients and adding this damage to cumulative total when a transient occurred.

The site testing provided good practical experience and showed up problems which would not otherwise have been detected.     

CF/ABS树脂复合材料制备工艺对导电性能的影响及对屏蔽性能的理论预测

本文研究了使用溶剂法、密炼机和开炼机混炼碳纤维填充ABS树脂复合材料的导电性能,得到了纤维填充量与复合材料电阻率的关系,对其导电机理进行了分析.通过比较,发现纤维长径比是决定复合材料导电性能的重要因素,其它如纤维在基体中的分布也对复合材料导电性能有影响.最后对复合材料的屏蔽性能进行了理论计算.     

Microwave Communication to Moving Parts Inside Machines

Cables to moving parts on a linear actuator in production machines, such as pick-and-place machines, are a source of unreliability owing to the possible breaking of a cable. They further reduce the positioning precision of the actuator owing to additional forces. Slotted waveguide systems for rail vehicles based on 2.4 GHz transmission frequency are well known, but transmitters/receivers and waveguides are bulky. The paper reports on the reduction in size of the equipment, adapted to 5.8 GHz using a commercial off-the-shelf RadioLan communication module. Further, the efficient termination of the wave-guide and a new way to reduce standing-wave effects is also discussed.     

聚合物降解产物伤害与糖甙键特异酶破胶技术

综述了钻井，完井，尤其是水力压裂作业中产生的多糖类聚合物伤害和应用糖甙键特异酶破胶，解除多糖类聚合物伤害的技术。第一节报道了聚合物降解产物造成的伤害，指出冻胶破胶液粘度低并不代表压裂液已从充填裂缝中充分返排，氧化破胶剂和普通酶破胶剂不能使多糖类聚合物充分降解，产生的大分子量，水不溶的降解产物可对地层造成伤害，消除伤害的办法是采用对糖甙键有特异性的各种水解酶作压裂液破胶剂或伤害地层处理剂。第二节报道了各种聚合物（纤维素，瓜尔胶，淀粉）糖甙键特异酶降解聚合物的机理。第三节报道了糖甙键特异酶（主要针对瓜尔胶）的应用性能测试及结果，包括岩心流动实验，含糖量和分子量测定，传导性测试。第四节介绍了糖甙键特异酶消除聚合物伤害和用作压裂液破胶剂的现场应用，包括选井原则，实施工艺要点及3个典型井例。     

半导体量子点最低导带态的量子限制效应

采用最新计算方法和半导体体材料传统量子计算结果,系统研究了14种半导体(Si,Ge,Sn,AlSb,GaP,GaAs,GaSb,InP,InAs,InSb,ZnS,ZnSe,ZnTe,CdTe)的立方量子点,得到了最低导带态的量子限制效应结果,我们把量子点对尺寸的依赖关系分为三类并详细讨论了它们的差别。     

储层敏感性快速预测软件在大港油田的研究与应用

在储层特征分析，室内实验，机理研究的基础上，利用人工神经BP网络建立预测模型，并编制了预测储层5种敏感性的软件，该软件受人为因素干扰小，所需参数少，准确度高，综合符合率大于80％现场应用结果表明，该技术能为制定保护油气层技术措施提供较可靠的依据，能提高油田滚动开发效益，改善老油田的开发效果，该软件对BP算法进行了改进，（1）从两方面入手使网络摆脱平坦区，一是对输入数据进行归一化处理，使O1的取值在[0,1]之间，二是一旦网络陷入平坦区域，局部极小，使连接权值Wkj,Wji和阈值Qk,Qj同时缩小一个因子，λ＞1，可使Ok(1-Ok)脱离零值，离开平坦区；（2）加速收敛，方法有自动调整学习因子，添加动量项以及对权值进行批处理，用BP算法预测储层潜在敏感性，首先应确定影响储层敏感性的主要因素，然后根据这些因素有针对性地收集有关资料并进行处理，再根据敏感性预测的要求，设计相应的网络结构进行训练，最后对训练好的网络进行.检验。     

大庆油田套损井打通道加固技术

介绍了大庆油田近几年在套损井打通道加固技术方面取得的技术进步，在磨铣打通道技术上主要对钻铣工具的结构进行了优化设计及合理及合金刀块的优选组合，提高了磨铣效率，缩短了施工周期；在爆炸打通道技术中设计了安全隔爆装置，提高了施工的安全性，使爆炸扩径技术得到完善；Φ106mm密封加固技术的研制成功，取代了Φ100mm密封加固技术，为套损井修复后的完井工艺提供有效的技术支持，提出了大庆油田目前在套损井打通道加固方面存在的难题，结合国外在套损井打通道加固方面技术的新发展，对现有技术的局限性进行了分析，提出了今后技术攻关的方向。     

Structural and electronic properties of CuInSe2

Structural investigation on monocrystalline CuInSe₂ samples has been made. From the single crystal results, the space group of CuInSe₂ was confirmed to be Iˉ42d and the crystal solidification direction was investigated. Compositional uniformity of the ingots was established by EPMA and it was found that the indium concentration was greater than that for copper. Systematic annealing experiments were carried out in vacuum at different temperatures (as low as 160° C) and for different times. Large variation in resistivity was observed after the annealing treatment. P-type samples were found to convert to n-type after the heat-treatments.     

Suggestions for the quantitative X-ray microanalysis of thin sections of frozen-dried and embedded biological tissues

When a microregion in a thin section of frozen-dried and embedded tissue is analysed by the conventional electron-probe X-ray continuum-normalization method, the measured quantity is in mmol of element per kg of embedded specimen. As each microregion contains an unknown amount of embedding medium, this quantity generally lies indeterminately somewhere within the wide range between mmol of element per kg of hydrated tissue and mmol of element per kg of dehydrated tissue. However, if a ‘tag’ element is incorporated in the embedding medium, the contribution of the medium to the local continuum count in each probed field should be measurable, and the X-ray data may then unambiguously yield mmol of element per kg of dehydrated tissue. This result should not be affected by shrinkage on freeze-drying or by incomplete replacement of water by embedding medium. The same X-ray data can additionally provide estimates of mmol of element per unit volume, mmol of element per kg of hydrated tissue and local dry-mass fraction. However, these estimates are subject to errors due to tissue shrinkage, incomplete replacement of water and beam damage.     

Study of impurity induced modifications in amorphous N-type (GeSe3·5)100−x Bi x using high pressure technique

The technique of high pressure is utilized to study the carrier transport behaviour in doped and undoped bulk amorphous (GeSe_3·5)_100−x Bi _x (x=0, 2, 4, 10) down to liquid nitrogen temperature to observe impurity induced modifications in amorphous semiconductors. It is observed that pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x=4, 10) semiconductors are markedly different. Results are discussed in view of the incorporation behaviour of the bismuth impurity.