紫外激光双波段高反射镜的研制

通过非线性光学频率变换的方式,1 064 nm YAG激光可获得355 nm、266 nm波长的激光。在此系统中工作的反射镜必须同时满足两个波段的高反射。根据薄膜设计理论选择合适的镀膜材料,采用电子束离子辅助沉积工艺,经过参数优化和反复试验,在石英基片上制备了355 nm反射率为97.9%,266 nm反射率为96.8%的双波段反射镜,且在紫外波段355 nm的激光损伤阈值为1.76J/cm2,266 nm为1.12 J/cm2。测试结果表明,此反射镜的各项性能满足使用要求。     

Circuit related issues due to radiation in hostile environments

Various types of radiation in hostile environments cause transient and permanent changes in the devices used in complex integrated circuits. The failure of a particular IC is a function not only of the basic material and device parameter changes but also of the circuit environment in which the device is located. Circuit techniques have been developed which minimize the detrimental effects of radiation on certain types of circuits. In other cases, circuit techniques are not very effective in minimizing radiation effects. This work discusses selected issues related to the interactions between device radiation effects and circuit performance or circuit failure in a hostile radiation environment. This is not meant to be a comprehensive study of circuit effects but rather several examples are selected to illustrate the issues involved in designing circuits to operate in hostile radiation environments.     

Comparison of the effects of ionizing radiation at twelve dose rates from 0.0015 to 100 rad(Si)/s

Evidence is presented that two competing failure mechanisms exist in the Si-SiO₂ system with one mechanism dominating at low dose rates and the other at high. Much lower dose failures than expected were discovered at low dose rates (<0.1 rad(Si)/s) and very low dose rates (∼0.001 rad(Si)/s) in commercial SGS 4007 CMOS devices. These failure doses plotted versus dose rate have a bell-shaped curve, rather than the expected straight line (decreasing with increasing dose rate), indicating that a different failure mechanism is dominant at low dose rates than at high.     

Radiation studies with accelerator generated fast neutrons

Electronic devices are tested, on occasion, to determine their resistance to exposure to fast neutron fluences in the 10¹²-to 10¹⁴-n/cm² range. Usually these tests utilize neutrons from a nuclear reactor. Reactor neutron fluences frequently carry unwanted admixtures of gamma rays and of slow neutrons. These conditions have led us to develop an accelerator based neutron source which is largely free of unwanted radiations. In the present paper we examine the effects of gamma rays and of slow neutrons upon electronic devices, we describe our neutron source, and we review various forms of fast neutron dosimetry we use. The results we obtain suggest that our source should be considered as a fast neutron standard.     

Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses

The possible physical mechanism of the anomalous recovery effect in SiGe bipolar transistors is described. The qualitative analysis of saturated oxide trapped charge and interface trap densities at very high total doses as a function of dose rate affords an explain of decreasing excess base current and increasing current gain during further low dose rate irradiation.     

氮化镓干法刻蚀研究进展

对比了RIE,ECR,ICP等几种GaN干法刻蚀方法的特点.回顾了GaN干法刻蚀领域的研究进展.以ICP刻蚀GaN和AlGaN材料为例,通过工艺参数的优化,得到了高刻蚀速率和理想的选择比及形貌.在优化后的刻蚀工艺条件下GaN材料刻蚀速率达到340nm/min,侧墙倾斜度大于80°且刻蚀表面均方根粗糙度小于3nm.对引起干法刻蚀损伤的因素进行了讨论,并介绍了几种减小刻蚀损伤的方法.     

基于压电元件的Lamb波模式调制方法

Lamb波损伤监测技术是近年来结构健康监测研究的热点之一。由于Lamb波传播过程中存在频散及多模效应,监测过程中结构响应信号十分复杂,给信号处理和分析带来困难。根据压电元件激励与传感模型,对Lamb波模式调制及选择方法进行了分析研究,给出了基于压电元件的选择性模式激励与接收原理,实现对期望模式的激发和采集,简化响应信号及后续处理。在铝板结构上的实验研究验证了方法的有效性。     

Considerations for the development of radiation resistant devices and VLSI circuits

The impact of radiation on Very Large Scale Integration (VLSI) silicon technology is discussed with a focus on Complimentary Metal-Oxide Semiconductor (CMOS). Effects of total dose, transient radiation, single event phenomena, and neutron fluence on devices and circuits are presented. General approaches to mitigating radiation effects are put forth. With proper considerations, VLSI CMOS can be enhanced to achieve several orders-of-magnitude increase in radiation tolerance.     

温度对双光子光折变介质中光伏孤子特性的影响

具有双光子光折变效应的光折变介质温度的变化对光伏孤子性质具有影响。通过光伏空间孤子的演化方程得到的亮和暗光伏空间孤子解与温度相关,在室温范围内,双光子光折变介质中空间孤子的光强和强度半峰全宽(FWHM)均受温度影响。随着介质温度的升高,双光子光折变介质支持光强较小的光伏空间孤子;在较大光强情况下,双光子光折变介质支持强度半峰全宽较小的光伏空间孤子;在小光强情况下,双光子光折变介质支持强度半峰全宽较大的光伏空间孤子。即可以通过控制光折变介质的温度来控制介质中光伏孤子的空间形态,从而在光折变介质中形成稳定的光伏空间孤子。