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101.
Full instrumental rationality and perfect institutions are two cornerstoneassumptions underlying neoclassical models. However, in the real world, thesetwo assumptions never hold, especially not in developing countries. In thispaper, we develop a game theoretical model to investigate if relaxations inthe full instrumental rationality and perfect institutions premise can explainthe conflicts that have been occurring between the various principals in theNarok district in Kenya with regard to land tenure and use. 相似文献
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刘海霞 《南通纺织职业技术学院学报》2013,13(2):98-100
作为大学文化建设的重要窗口,南通纺织职业技术学院文博馆肩负着文化传承、发展与创新的重大责任。为充分彰显其文化教育功能和文化品牌效应,应进一步加强内涵与外延建设,以科研为动力,积极探索文博馆的运行机制。 相似文献
105.
Jun-Qiu Jiang Kun Wang Xue-Xuan Peng Qing-Liang Zhao Yun-Shu Zhang Xiu-Dong Zhou 《哈尔滨工业大学学报(英文版)》2013,20(4):1-6
This paper compared the degradation efficiency of sludge organic matters and electric-production by two typical microbial fuel cells——dual-chamber microbial fuel cell(DMFC)and single chamber air cathode microbial fuel cell(SAMFC),and the variations of sludge protein,polysaccharide and ammonia nitrogen within the systems were also investigated.The results showed that the concentration of sludge soluble chemical oxygen demand,protein and carbohydrate of DMFC are higher than these of SAMFC during the systems operation,while DMFC can achieve a better ammonia nitrogen removal than SAMFC.Under the same operation condition,the stable voltage output of DMFC and SAMFC is 0.61 V and 0.37 V;the maximum power density of DMFC and SAMFC is 2.79 W/m3and 1.25 W/m3;TCOD removal efficiency of DMFC and SAMFC is 34.14%and 28.63%for 12 d,respectively.Meanwhile,DMFC has a higher coulomb efficiency than SAMFC,but both are less than5%.The results showed that DMFC present a better performance on sludge degradation and electric-production. 相似文献
106.
以靖远黄河大桥这一五跨连续刚构箱梁桥为工程背景,运用当量截面法计算靖远桥的剪力滞系数。分析其简化计算,将结果与ANSYS分析结果进行比较。 相似文献
107.
23 highly hypnotizable undergraduates (Harvard Group Scale of Hypnotic Susceptibility) underwent 2 specially constructed 7-item hypnotic inductions. Over the 14 items, the main finding was of a relationship between E. R. Hilgard's (1973, 1977, 1979) "hidden observer" effect and 2 aspects of hypnotic age regression. Ss reporting a hidden observer experienced duality during regression to age 5, in which they were aware of being both adult and child. When asked to write a complex sentence, most did so, usually without spelling errors. The Ss not reporting this effect experienced quasi-lateral age regression in which they had the exclusive feeling of being 5 yrs old, with no sense of an adult identity. Most of these Ss were unable to write the same complex sentence when requested to during age regression. The study replicated Hilgard's finding of the hidden observer phenomenon in terms of its incidence and obtained similar verbal reports from Ss experiencing it. At the same time, the results suggest that a neodissociation account of hypnosis may need some modifications to accommodate these additional findings. (27 ref) (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
108.
HSV-tk基因/GCV系统治疗肿瘤的旁观者效应与缝隙连接关系的研究 总被引:1,自引:0,他引:1
目的 探讨单纯疱疹病毒胸苷激酶(HSV-tk)基因/丙氧鸟苷(GCV)系统杀伤肿瘤细胞时旁观者效应与细胞间缝隙连接的关系。方法 用PA317细胞包装STK质粒(逆转录病毒载体介导的HSV-tk基因),形成假逆转录病毒颗粒,转染有缝隙连接的大鼠胶质瘤细胞C6和无缝隙连接的入宫颈癌细胞 Hela,制成 C6 tk+和 Helatk+细胞,将不同比例的C6和 C6 tk+、Hela和 Hela tk+细胞混合,每种比例8孔,培养 24h后 4孔加入含0.5μg/mlGCV的培养基,4孔作对照,6d后用MTT法测量细胞存活率。在两个培养皿中放入周围粘有33mm高滤纸的载玻片,分别接种 C6、C6 tk+细胞。细胞 80%汇合后将载玻片互换,并加入含0.5μg/ml GCV的培养基,6d后观察细胞形态。结果C6细胞组存在旁观者效应,Heal细胞组不存在旁观者效应。培养皿中tk+细胞大部分被杀死,tk-细胞无变化。结论HSV-tk基因/GCV系统杀伤肿瘤细胞时旁观者效应与细胞间缝隙连接有关。 相似文献
109.
This paper simulates a kind of new sub-50 nm n-type double gate MOS nanotransistors by solving coupled Poisson-Schrödinger equations in a self-consistent manner with a finite element method, and presents a systematic simulation-based study on quantum-mechanical effects, gate leakage current of FinFETs. The simulation results indicate that the deviation from the classical model becomes more important as the gate oxide, gate length and Fin channel width becomes thinner and the Fin channel doping increases. Gate tunneling current density reduces with the body thickness decreasing. Excessive scaling increases the gate current below Fin thickness of 5 nm. The gate current can be dramatically reduced beyond 1017 cm−3 with the Fin body doping increasing. In order to understand the influence of electron confinement, quantum mechanical simulation results are also compared with the results from the classical approach. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure. 相似文献
110.