某自动机身管衬套断裂分析

针对某转膛自动机身管衬套定位键断裂的问题,通过分析其工作原理和断裂表现,并考虑到转膛体衬套、身管以及炮箱对身管衬套的影响,给出身管衬套定位键断裂的原因。在对身管衬套进行一定简化与假设的基础上,建立身管衬套的三维模型,采用有限元分析方法计算身管衬套的强度,找出需加强的薄弱部分并对身管衬套的结构进行修改,再进行有限元分析。对比理论分析与试验,结果表明修改后的身管衬套可满足要求。     

3,3-二叠氮甲基氧丁环与3-叠氮甲基-3-甲基氧丁环均聚物的嵌段共聚物热分解机理及非等温裂解动力学分析

3,3-二叠氮甲基氧丁环与3-叠氮甲基-3-甲基氧丁环均聚物的嵌段共聚物(BAMO-AM-MO)是一种含能黏合剂,为了解其受热分解机理及分解动力学情况,采用DSC法、TG-DTG法、固相原位池-FTIR联用技术和DSC-TG-MS联用技术探讨了BAMO-AMMO的热分解过程及机理.研究结果表明,BAMO-AMMO受热分...     

发射药强度模拟实验方法

为检验发射药的撞击强度,建立了一种新型的模拟实验装置,用来模拟发射药在自动武器或火炮膛内高温、高压的发射环境,计算分析了实验装置的膛压和影响发射药速度的因素,得出了具有一定价值的结论。     

自动武器协同设计中模型结构一致性保持及映射技术研究

针对目前大型CAD软件的协同支持工具协作功能有限,分发模型数据量过大,无法实现高效响应设计问题,结合自动武器快速协同设计的实时性需求,在可配置可复用的模块参数化设计方法的基础上,建立了基于网络协同的自动武器三维模型数据结构一致性保持及映射机制.利用与平台无关的结构化信息描述手段描述特征模型和三维建模参数化造型数据及相关...     

Traps as interaction sites for hyperfine mixing: The origin of magnetoconductance in organic light-emitting diodes

The origin of magnetoconductance (MC) in organic light-emitting diodes under bipolar injection conditions was investigated using devices containing pristine Super-Yellow poly(phenylene vinylene) (SY-PPV) or SY-PPV:phenyl-C61-butyric acid methyl ester (PCBM) (x wt%) blends as the active layers. In pristine SY-PPV device, it was found that the low-field component of MC was always larger than the high-field component. Additionally, the low-field component increased and then saturated with increasing the electrical stressing time, whereas the high-field component remained unchanged. These behaviors were analyzed using empirical formula (containing a Lorentzian and a non-Lorentzian function), which suggested that the dominant mechanism in the MC response was hyperfine mixing between single and triplet polaron pairs that occurred on trap sites. The specific role of these traps, providing interaction sites for hyperfine mixing, was confirmed by controlling the lifetime of the trapped polaron-pairs states by doping the active layer with PCBM.     

钽抛光及抛光机理的探究

为拓宽CMP技术应用领域,研究了中国工程物理研究院机械制造工艺研究所提供的钽片的抛光,打破过去以机械加工为主的加工手段,采用提高化学作用的方法,加入螯合剂、有机碱、活性剂等助剂,对钽进行抛光.结果发现,钽表面的粗糙度较小,表面状态良好,说明增强化学作用可以提高抛钽效果.对钽的CMP机理做了分析与推测,为钽CMP进一步研究奠定了基础.     

Comparison of the effects of ionizing radiation at twelve dose rates from 0.0015 to 100 rad(Si)/s

Evidence is presented that two competing failure mechanisms exist in the Si-SiO₂ system with one mechanism dominating at low dose rates and the other at high. Much lower dose failures than expected were discovered at low dose rates (<0.1 rad(Si)/s) and very low dose rates (∼0.001 rad(Si)/s) in commercial SGS 4007 CMOS devices. These failure doses plotted versus dose rate have a bell-shaped curve, rather than the expected straight line (decreasing with increasing dose rate), indicating that a different failure mechanism is dominant at low dose rates than at high.     

On the structure of low-temperature PECVD silicon dioxide films

It is demonstrated that the results of refractive index, infra-red absorption and electron spin resonance measurements on low temperature PECVD silicon dioxide films are con-sistent with a network structure composed of densified, amorphous SiO₂ and micro-scopes. The density of the amorphous SiO₂ is suggested to be greater than that of un-densified SiO₂ by about 10%. Approximately 5% of the deposited film volume is argued to consist of micropores High temperature annealing relaxes the dense state of the amorphous SiO₂ and collapses the volume occupied by the micropores.     

ZnO薄膜材料的发光特性

回顾了最近几年对 Zn O薄膜材料发光特性的研究进展 ,介绍了用不同方法制备 Zn O薄膜的自发辐射和受激辐射发光特性。     

ICP-induced defects in GaN characterized by capacitance analysis

The defects induced by inductively coupled plasma reactive ion etching (ICP-RIE) on a Si-doped gallium nitride (GaN:Si) surface have been analyzed. According to the capacitance analysis, the interfacial states density after the ICP-etching process may be higher than 5.4 × 10¹² eV⁻¹ cm⁻², compared to around 1.5 × 10¹¹ eV⁻¹ cm⁻² of non-ICP-treated samples. After the ICP-etching process, three kinds of interfacial states density are observed and characterized at different annealing parameters. After the annealing process, the ICP-induced defects could be reduced more than one order of magnitude in both N₂ and H₂ ambient. The H₂ ambient shows a better behavior in removing ICP-induced defects at a temperature around 500 °C, and the interfacial states density around 2.2 × 10¹¹ eV⁻¹ cm⁻²can be achieved. At a temperature higher than 600 °C, the N₂ ambient provides a much more stable interfacial states behavior than the H₂ ambient.