平面式电容传感器阵列激励模式研究

由于非金属复合材料及其内部不同损伤具有不同介电特性,采用平面式电容传感器阵列可实现无损可视化检测。针对平面式阵列电极结构,研究不同激励模式对复合材料内部缺陷检测效果影响。提出单激励、双激励和奇偶激励3种激励模式,对比分析各种激励模式下传感器信号强度、探测深度等性能差异。结果表明:奇偶激励模式在信号测量和成像质量方面都优于前2种模式。同时也验证了基于电容敏感机理的平面电容传感器阵列对复合材料内部缺陷检测的可行性和有效性。     

二部图在用户-网站中的实证研究

通过分析用户浏览网站的访问日志,建立用户-网站的二部图。其次分别通过对用户和网站进行投影,构建出用户网和网站网。然后通过计算节点间的相似度来确定边的权值。最后计算了用户网和网站网进行了度分布、平均最短路径、平均群聚系数、点强度等拓扑参数以及时间间隔分布等人类动力学特性。证实了该网络是无标度网络,且具有"小世界"效应特性。     

基于安全关键件管理的内燃机车安全质量防控管理信息系统的开发和应用

从本单位内燃机车安全质量防控管理的角度出发,介绍了基于安全关键件管理的内燃机车安全质量防控管理信息系统开发的背景、总体架构、功能模块、关键技术和运行环境等,阐述了系统应用后带来的效果并对下一步的工作进行了展望.     

The "hidden observer" phenomenon in hypnosis: Some additional findings.

23 highly hypnotizable undergraduates (Harvard Group Scale of Hypnotic Susceptibility) underwent 2 specially constructed 7-item hypnotic inductions. Over the 14 items, the main finding was of a relationship between E. R. Hilgard's (1973, 1977, 1979) "hidden observer" effect and 2 aspects of hypnotic age regression. Ss reporting a hidden observer experienced duality during regression to age 5, in which they were aware of being both adult and child. When asked to write a complex sentence, most did so, usually without spelling errors. The Ss not reporting this effect experienced quasi-lateral age regression in which they had the exclusive feeling of being 5 yrs old, with no sense of an adult identity. Most of these Ss were unable to write the same complex sentence when requested to during age regression. The study replicated Hilgard's finding of the hidden observer phenomenon in terms of its incidence and obtained similar verbal reports from Ss experiencing it. At the same time, the results suggest that a neodissociation account of hypnosis may need some modifications to accommodate these additional findings. (27 ref) (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

HSV-tk基因/GCV系统治疗肿瘤的旁观者效应与缝隙连接关系的研究

目的 探讨单纯疱疹病毒胸苷激酶（HSV－tk）基因／丙氧鸟苷（GCV）系统杀伤肿瘤细胞时旁观者效应与细胞间缝隙连接的关系。方法 用PA317细胞包装STK质粒（逆转录病毒载体介导的HSV-tk基因），形成假逆转录病毒颗粒，转染有缝隙连接的大鼠胶质瘤细胞C6和无缝隙连接的入宫颈癌细胞 Hela，制成 C6 tk+和 Helatk+细胞，将不同比例的C6和 C6 tk+、Hela和 Hela tk+细胞混合，每种比例8孔，培养 24h后 4孔加入含0．5μg/mlGCV的培养基，4孔作对照，6d后用MTT法测量细胞存活率。在两个培养皿中放入周围粘有33mm高滤纸的载玻片，分别接种 C6、C6 tk+细胞。细胞 80%汇合后将载玻片互换，并加入含0．5μg/ml GCV的培养基，6d后观察细胞形态。结果C6细胞组存在旁观者效应，Heal细胞组不存在旁观者效应。培养皿中tk+细胞大部分被杀死,tk-细胞无变化。结论HSV-tk基因/GCV系统杀伤肿瘤细胞时旁观者效应与细胞间缝隙连接有关。     

Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study

This paper simulates a kind of new sub-50 nm n-type double gate MOS nanotransistors by solving coupled Poisson-Schrödinger equations in a self-consistent manner with a finite element method, and presents a systematic simulation-based study on quantum-mechanical effects, gate leakage current of FinFETs. The simulation results indicate that the deviation from the classical model becomes more important as the gate oxide, gate length and Fin channel width becomes thinner and the Fin channel doping increases. Gate tunneling current density reduces with the body thickness decreasing. Excessive scaling increases the gate current below Fin thickness of 5 nm. The gate current can be dramatically reduced beyond 10¹⁷ cm⁻³ with the Fin body doping increasing. In order to understand the influence of electron confinement, quantum mechanical simulation results are also compared with the results from the classical approach. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure.     

电力负荷参数记录与监控系统的开发与应用

介绍了电力负荷参数记录与监控系统的组成、原理、功能以及软、硬件的开发过程。该系统通过对用电单位的用电状况进行实时监测，为用电部门提供电网运行数据。对如何抑峰填谷、科学用电、提高用电管理水平等方面具有重要意义。系统投入运行后表明：系统运行安全可靠，功能强大，电力数据采集全面、准确，社会效益和经济效益显著。     

闽江口湿地遥感影像最佳景观观察尺度的选择

应用遥感和地理信息系统技术,对景观最佳观察尺度选择的方法进行了探讨;构建了“定量化景观指数粒度敏感区间,定性化尺度大小,定性与定量相结合决定最佳观察尺度值“的最佳景观观察尺度选择模式,并以ASTER遥感影像为数据源,应用该模式对闽江口湿地景观最佳观察尺度进行了研究,指出闽江口湿地的景观观察尺度应以50m和100m为主,最大尺度不应超过200m.     

微机械振动式陀螺仪寄生效应的处理

基于微机械陀螺仪的寄生效应产生原理,借助于陀螺仪的系统函数,分析了寄生效应对系统频率响应的影响.对频率响应实部和虚部的处理,可以得到寄生电容和寄生电阻等一些关键参数值.通过数字滤波的方法可以减少寄生效应的影响.     

氮化硅晶须的研究现状

介绍了晶须的生长机理、氮化硅晶须的制备方法以及影响其生长的因素。阐述了氮化硅晶须增强复合材料的现状,指出加强晶须的基础研究,改进制备技术和降低成本是今后的发展方向。