单片机在监控同步电动机运行功率因数中的应用

介绍如何利用单片机自动控制同步电动机运行时的功率因数。     

弱激发氩离子激光的振荡频率特性

通过改变激光器的相对激发,观察到了氩离子激光器振荡频率的演变特性。用模竞争效应对实验现象进行了理论解释。     

拟动力实验中的数值积分方法

拟动力实验方法是目前最新的抗震实验方法，它克服了振动台实验中承载力不足、拟静力实验中无法真实模拟地震过程的缺点．本文详细论述了拟动力实验中的数值积分方法，其中包括：显式方法，隐式方法以及采用于结构技术时所需的特殊教值积分方法，并对这些方法的适用范围作了介绍．     

叶绿素衍生物─CPD_4在人血清中的激发和发射荧光谱

叶绿素衍生物４号（ＣＰＤ４）是一种新型中药光敏剂，本文研究了不同浓度的ＣＰＤ４分别在含１０％不同血型人血清的生理盐水中以及纯生理盐水中的激发和发射荧光光谱，并对结果进行了分析，结论对ＣＰＤ４在光动力诊断恶性肿瘤的临床应用具有一定的指导意义．     

小型全内腔脉冲Ar~＋激光管的研制

介绍一种小型全内腔脉冲Ａｒ＋激光管的设计和结构。并对不同阴极，放电管直径，激励电压及Ａｒ气压等对输出功率及激光管寿命的影响作了一系列的实验，试制出结构简单，使用方便，价格便宜的有一定实用价值的小型全内脏脉冲Ａｒ＋激光管。     

Rapid determination of chlorophylls in vegetable oils by laser-based fluorometry

The presence of chlorophylls in vegetable oils is considered undesirable due to their adverse effects on oxidative deterioration, bleachability and hydrogenation. The usual methods for determination of chlorophylls in vegetable oils are absorption spectrophotometry, fluorometry and liquid chromatography using fluorescence detectors. This paper outlines a fluorometric method using a laser as the excitation source. The chlorophylls in crude palm oil, rapeseed oil, soya bean oil and olive oil were determined directly by laser-based fluorometry using (a) a helium-neon laser (632-8 nm, 5 mW) as the excitation source and an optical-multichannel analyser (OMA) with an intensified diode array as the detector, and (b) a helium-neon laser and a photomultiplier tube as the detector. The method is especially suitable for the detection of chlorophylls in crude palm oil since no pre-extraction step is required. The levels of chlorophylls measured in vegetable oils using the laser technique was also compared against values obtained by conventional spectrophotometric methods. The simplicity and rapid quantification of laser based fluorometry suggest that this technique can be readily applied to the detection or a wide variety of fluorescing species in vegetable oils.     

Electron-Impact Cross Sections for Dipole- and Spin-Allowed Excitations of Hydrogen,Helium, and Lithium

Electron-impact excitation cross sections are presented for the dipole- and spin allowed transitions from the ground states to the np ²P states for hydrogen and lithium, and to the 1snp ¹P states for helium, n = 2 through 10. Two scaling formulas developed earlier by Kim [Phys. Rev. A 64, 032713 (2001)] for plane-wave Born cross sections are used. The scaled Born cross sections are in excellent agreement with available theoretical and experimental data.     

对市毛纺二厂中南楼倒塌的分析研究

本市第二毛纺厂中南楼是一幢三层四跨的纯框架结构，它在1976年7月28日的唐山地震中，结构遭受了严重的破坏．后经过加固，在同年的11月15日的宁河地震作用下，房屋全部倒塌，笔者利用平面杆系模型，对其结构进行弹塑性分析，以期得到影响该房屋倒塌的因素。     

Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wells

The optical emission characteristics of biaxially compressed InAs _x P_{1− x} /InP strained single quantum well (QW) structures, with nominal compositionx=0.67, have been investigated using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. The highly strained QWs exhibit intense and narrow PL in the 0.9–1.5 μm wavelength range, similar to the lattice-matched InGaAs(P)/InP system. The 20 K PLE spectra exhibit well-resolved features attributed ton=1 heavy hole (E1H1) and light hole (E1L1) transitions in the 1.0–1.5 μm wavelength range. In addition, features attributed to transitions betweenn=2 electrons and heavy holes (E2H2), and betweenn=1 electrons and unconfined holes (E1Hf), were observed. The energy splitting between the heavy-hole and light-hole bands was found to be a sensitive measure of the band offsets in the system. The best prediction of this splitting was obtained for a valence band offset of δE _V ∼0.25δE _G . This value of band offset was in agreement with the energy position of the E1Hf transition. The observed transition energies were also compared with the results of a finite square well model, taking into account the effects of strain, and the results offer further support for the band offset assignment. This study indicates that the InAsP system may be advantageous for application in strained-layer optoelectronic devices operating in the 1.3–1.6 μm wavelength range.     

基于新型高速高集成度单片机C8051F060的智能功率柜

简要介绍了智能励磁功率柜的概念及C8051F060单片机的特点 ,详细论述了基于C8051F060的智能励磁功率柜的结构、原理以及与CAN总线通信的实现方法。该控制方案系统集成度高、硬件简单、工作可靠 ,具有很好的推广价值