The cover image is based on the Research Article V2O5/RGO/Pt nanocomposite on oxytetracycline degradation and pharmaceutical effluent detoxification by Mohan, H et al., DOI: 10.1002/jctb.6238 .
Wastewaters from the manufacture of pulp and paper have given rise to problems of excessive microbial growth in rivers over a number of years. This paper is the first in a series of four articles describing research undertaken by PIRA at four U.K. paper/board mills (one integrated with pulp production) over the period 1978–1980. This first paper briefly reviews the published literature on sewage fungus growth from pulp and paper mill discharges up to 1978, but mainly describes previously unpublished work undertaken by PIRA over the period 1965–1975. This introductory paper thus provides a state-of-the-art review of methods to control sewage fungus growth from pulp and paper mill effluents prior to commencement of the research described in the following three articles. 相似文献
Hot electron transport across graded compound semiconductor heterojunctions has been explored using a two-dimensional formulation of the self-consistent ensemble Monte Carlo method. The AlxGa1-xAs/GaAs heterojunction imbedded into a vertical field effect transistor with two ohmic contacts (source, drain) and two lateral Schottky gates has been used as an example. Lateral space charges modulated by the gates are shown to control ballistic injection of electrons over the heterojunction under steady state conditions. The transient response to a gate pulse is found to be determined by carrier transit from the heavily doped source contact region into the channel. A conceptual one-dimensional section model is used to explain the Monte Carlo results. 相似文献
Surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al2O3 layers on p-type CZ silicon wafers. Low surface recombination is achieved by means of field induced surface passivation due to a high density of negative charges stored at the interface. In comparison to a diffused back surface field, an external field source allows for higher band bending, that is, a better performance. While this process yields state of the art results, it is not suited for large-scale production. Preliminary results on an industrially viable, alternative process based on a pseudo-binary system containing Al2O3 are presented, too. With this process, surface recombination velocities of 500–1000 cm/s have been attained on mc-Si wafers. 相似文献