透射型定时探测器

本文介绍了由微道板构成的透射型定时探测器,得到的飞行时间系统的时间分辨为280ps。并对进一步改善时间特性作了讨论。     

轻型钢结构吊车梁设计方法及节点构造

通过分折和研究单层门式刚架轻型钢结构厂房中的吊车梁设计，总结了轻型钢结构吊车梁的设计方法和节点连接构造，对合理设计吊车梁，降低用钢量提出了设计建议。     

冶金厂房钢吊车梁设计中一些问题的探讨

对双层翼缘板焊接工型钢吊车梁的某些受力特征、吊车梁的支座节点连接构造设计等进行了较详尽的分析,提出了满足冶金工业厂房大跨度、大吨位吊车梁系统受力和工艺要求的方法.     

Structure of soya glycinin and conglycinin gels

Gels of glycinin and conglycinin formed at various heating temperatures, in the absence and presence of 0.2M sodium chloride were characterised by transmission electron microscopy. In distilled water both proteins formed gels consisting of strands with a thickness of 10–15 nm. The strands of glycinin were very regular and cross sections of strands showed a hollow cylindrical structure. In the presence of sodium chloride, glycinin formed an aggregated gel structure at 85°C, but at 95°C an ordered strand structure was formed. Dissociation of the quaternary structure on heating and reassociation of subunits into regular strands were considered the most probable mechanisms for strand formation from glycinin. The aggregated structure at 85°C was interpreted as a transient state prior to dissociation. Conglycinin rich gels were less regular and more crosslinked than gels of glycinin. Also, the strands of conglycinin showed a complex mode of aggregation possibly in the form of double spirals. The addition of sodium chloride caused a denser and more aggregated structure at 75 and 85°C, but the effects were not as drastic as in the case of glycinin. Heating temperature had only minor effects on the gel structure in the range studied.     

浅谈先张法预应力空心梁板施工质量通病的分析和防治

通过对先张法预应力空心梁板施工时容易忽视和发生的几个质量通病产生原因的分析，并结合工程实际和工作体会，粗略探讨了防治这些质量通病的一些措施和方法。     

Scanning electron microscope electron detector with a radial type discrete dynode electron multiplier

A discrete dynode electron multiplier with radial flux of electrons was built and tested in the range of low‐voltage scanning electron microscopy as a backscattered electron detector of topographic contrast. The multiplier collects backscattered electron emitted in a specific range of take‐off angles and over the whole azimuth angular range enabling large solid collection angle. Multipliers with different dynode shapes were studied theoretically with the use of the software for particle optics and three assemblies were built and tested experimentally. The gain estimation, assessment of the type of detected electrons (secondary electron or backscattered electron), imaging the spatial collection efficiency and signal‐to‐noise measurements were performed.     

Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.     

Structure modification of rapidly solidified Al-11 wt% Si alloy by the addition of 2 wt% Fe

An investigation of the structure formation of as-cast Al-11 wt% Si (AlSi11) and Al-11 wt% Si-2 wt% Fe (AlSi11Fe2) rapidly solidified (RS) ribbons is performed. Ribbon samples are examined in detail using Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A nanoscale thickness layer of Si-precipitations, at both Al-grains boundary and oxide/Al-matrix interface, is found to be characteristic for “pure” AlSi11 ribbons. For Fe-doped ribbons, this layer comprises Fe-containing phase also, which appears to possess amorphous nature and is situated between the Si-grains and Al-matrix. A possible mechanism of altering the thermally activated volume diffusion of elements, due to the effect of Fe on the structure modification, is speculated based on the obtained results.     

High Gd Concentration GaGdN Grown at Low Temperatures

GaGdN layers were grown at temperatures below 300°C by radio-frequency plasma-assisted molecular beam epitaxy on sapphire substrates. GaGdN samples with high Gd concentration as high as 12.5% were obtained by lowering the growth temperature. X-ray diffraction results showed no obvious secondary phase, which means that the phase separation can be suppressed by the growth at low temperatures. All samples, including those grown at room temperature, showed ferromagnetic characteristics. Photoluminescence emission was observed, though spectra exhibit broad and sharp luminescence bands related to many kinds of defects. It is suggested that electrons coming from defects, especially, nitrogen vacancy, stabilize ferromagnetism, and that the carrier-induced ferromagnetism occurs in the low-temperature-growth GaGdN.     

Non-linear current–voltage characteristics related to native defects in SrTiO3 and ZnO bicrystals

SrTiO₃ and ZnO bicrystals with various types of boundaries were fabricated in order to examine their current–voltage characteristics across single grain boundaries. Their grain boundary structures were also investigated by high-resolution transmission electron microscopy. In Nb-doped SrTiO₃, electron transport behaviors depend on the type of boundaries. Random type boundaries exhibit highly non-linear current–voltage characteristics, while low angle boundaries show a slight non-linearity. On the contrary, undoped ZnO does not exhibit non-linear current–voltage characteristics in any type of boundaries including random ones. It is suggested that the differences observed in current–voltage properties between the two systems are mainly due to the difference in the accumulation behavior of acceptor-like native defects at grain boundaries. A clear non-linearity is obtained by means of Co-doping even for the highly coherent Σ1 boundary in a ZnO bicrystal. This is considered to result from the production of acceptor-like native defects by Co-doping.