铁路桥梁横向振动模拟及适应快速行车结构型式的研究

针对铁路提速后出现的上承式简支钢板梁桥跨中横向振幅过大的问题,以羊楼司桥(L=32m单跨上承式简支钢板梁桥)为例进行实桥检测和数值模拟,建立车辆、线路、桥梁三者的联合模型,考虑轮轨接触力,应用MSC/DYTRAN大型结构分析程序进行车线桥动力相互作用的仿真分析。研究揭示我国用量最多的C62型货车以70∽80km/h的速度空载通过时,该跨度的钢板梁桥发生横向谐振的机理。此外,用该方法对32m跨长的组合梁结构进行桥梁动力特性及列车走行性分析,表明该结构满足提速货车和高速电动旅客列车走行的要求。研究结果对我国高速铁路桥梁建设和既有桥梁的改造具有积极意义。     

旋转导向钻井偏心稳定器横向振动研究

旋转导向钻井偏心稳定器横向振动研究是国家863“可控(闭环)三维轨迹钻井技术”课题研究的部分内容。选取偏心稳定器的心轴作为研究对象,以偏心稳定器心轴连续梁系统的横向振动模型受力分析为基础,根据课题研究中所设计的心轴结构形式,建立了与实际情况较为接近的三铰支点的连续梁系统横向振动方程;并分析了偏心稳定器横向振动对钻井工具和钻具系统的影响,为合理进行心轴设计以及偏心稳定器样机在现场的正确使用和钻井参数的合理选择,提供了科学的理论依据和实用的计算方法。计算实例表明,当钻压范围选择在80~250kN时,215.9mm井眼钻进中的确存在19~20、61~63、162~163r/min前三阶横向共振转速区间,因此在选择钻井参数时应通过钻压与转速的配合,尽可能避开横向共振转速,以保证下部钻具组合系统及作业安全。     

The Transport Properties of Hot Electrons in a Xenon/Methane Mixture

The results are given of numerical solution of the Boltzmann equation in a binomial approximation in view of elastic and inelastic electron collisions in Xe+CH₄ mixtures and in pure methane. The electron energy distribution functions obtained are used to calculate the electron transport coefficients for E/N values of up to several Townsends, i.e., the drift velocity, mobility, average and characteristic energies, diffusion coefficient. The results of calculation for pure methane fit the available experimental data. A similarity rule is found for the electron transport coefficients in a Xe+CH₄ mixture with different concentrations of methane molecules, which enables one to determine the values of transport coefficients in a mixture with a minor (less than 30 percents) methane content.     

纳米加工和纳米电子器件

介绍了电子束曝光技术、EUV光刻技术和X射线光刻技术的进展;对各种纳米电子器件如单电子器件、共振隧穿器件和分子电子器件的研究现状及面临的主要挑战进行了讨论。     

Intermediate order in tetrahedrally coordinated silicon: evidence for chainlike objects

In this report, we describe the nature of intermediate order in silicon as determined by recent measurements on thin films using transmission electron microscopy (TEM) and Raman scattering. The TEM images show in addition to the expected continuous random network (CRN), the presence of highly ordered quasi-one-dimensional “chain-like objects” (CLO's) that are 1–2 nm wide and tens of nm long that meander and show some evidence of cross-linking with each other. The presence of these objects correlate to a Raman feature centered at 490 cm⁻¹ whose width is 35–40 cm⁻¹, and is used to quantify the heterogeneity in terms of the CLO and CRN (=475 cm⁻¹ scattering) concentrations. The 490 and 35 cm⁻¹ values are consistent with bond angle deviations approaching 0°, and thus reinforces an association with the CLOs. We find that in reference quality a-Si:H (made using pure SiH₄), the CLO concentration is about 5 vol%, while in state-of-the-art material using high H₂ levels of dilution during processing, it increases to about 15%. Increased stability of such material to light-soaking is thus not mediated by a direct volumetric replacement of poor with high-quality components. Rather, an important characteristic of intermediate order in silicon is the low-dimensional aspect of its order, which allows it to influence more total volume than which it is itself composed. Consistent with these and other recent findings, we propose a tensegrity model of amorphous silicon.     

铀表面初始氧化行为的电子能量损失谱研究

利用俄歇电子能谱仪获取了表面清洁的铀及其在氧化过程中的电子能量损失谱(EELS)，研究这些电子能量损失谱线显示：清洁表面铀的等离子损失的实验值与理论值较为符合；随着氧化程度的加剧，体等离子体(BP)、表面等离子体(SP)以及价带间跃迁所造成的电子能量损失峰发生了明显的连续偏移和强度的变化，表明室温下清洁表面铀暴露微量纯氧后，在铀表面上发生了U→UO→UO2初始氧化过程。同时，又采用了俄歇电子能谱(AES)和X射线光电子谱(XPS)对照分析了铀的初始氧化过程。     

一维ZnO纳米结构的电子场发射研究

在大量制备一维ZnO纳米结构的基础上,研究了这些纳米结构的场发射性能。对于四角状ZnO纳米结构,获得1.0m Ac/m2的电流密度只需要4.5V/μm的电场;对于线状Z nO纳米结构,获得1.0mAc/m 2的电流密度需要6.5V/μm的电场。由于其特殊的结构,四角状ZnO一维纳米结构在真空电子器件方面有很好的应用前景。     

Characterization of EBPVD micro-layer composites and simulation of its internal stress state

Based on the basic operating principal and the technology characteristic of electron beam physical vapor deposition(EBPVD) technique, EBPVD was used to prepare the micro-layer composites. The effect on the substrate preheating temperature was taken into accounts and the finite element analysis package ANSYS was used to simulate the internal stress field and the potential displacement changing tendency. The results show that one of the most important quality factors on the judgment of micro-layer composites is the adhesion between the substrate and the deposition layers as well as among the different deposition layers. Besides the existance of temperature gradient through the thickness of layers, the main reason for the internal stress in micro-layer composites is the mismatch of various properties of the layer and the substrate of different thermal expansions and crystal lattice types. With the increase of substrate preheating temperature, the inter-laminar shear stress also takes on a tendency of increase but the axial residual stress decrease.