梯度折射率棒中传播的高斯光束轨迹解析解及其存在条件的讨论

本文提出光束轨迹方程的一般解，导出解析解的存在条件，推广了文献［１］的光线传播理论，文中以一特定梯度折射率棒为例，讨论了高斯光束在棒中的传播特性。     

微波电子回旋共振等离子体技术及其应用

微波电子回旋共振等离子体是淀积薄膜、微细加工和材料表面改性的一种重要手段。由于这种等离子体电离水平高,化学活性好,可以用来实现基片上薄膜的室温化学气相淀积和反应离子刻蚀,因此对于微电子学、光电子学和薄膜传感器件的发展,这种等离子体会具有重要的意义。此外,采用微波电子回旋共振等离子体原理,没有灯丝的离子源可以提高离子源的使用寿命,可以增加离子束的束流密度。可以确信,微波电子回旋共振等离子体的发展,将把离子源技术提高到一个新的水平。显然,这必将对材料表面改性工艺,包括离子注入掺杂等工艺的发展发挥作用。自从1985年以来,为了得到大容积等离子体而发展了微波电子回旋共振多磁极等离子体,这些技术在薄膜技术、微细加工以及材料表面改性中的应用前景是乐观的。我们将在本文中,介绍微波电子回旋共振等离子体的原理及其应用。     

A new surface characterization technique: RIMAPS (Rotated Image with Maximum Average Power Spectrum)

This work introduces a new imaging technique, Rotated Image with Maximum Average Power Spectrum (RIMAPS), for use in determining orientation and characteristics of surface topography. It consists of computing the maximum value of the averaged power spectrum, given by one step of the two‐dimensional Fourier transform, for each angle of rotation of a digitized image. The basic measurement science of this technique is described and different cases are studied. The characterization of simple geometrical figures explains the meaning of peaks and their angular positions given by RIMAPS analysis. A known surface pattern made on a sample of pure copper, mechanically ground, is used to study reproducibility, dependence on image quality and topography scale relative to pixel size and magnification. Samples of pure zinc, mechanically ground and chemically etched, were used to show the main features of RIMAPS analysis when characterizing a more complicated pattern on a real surface. All the studies performed under different conditions for observation and acquisition of images give strong evidence of the stability and robustness of RIMAPS as a technique for the characterization of topography.     

基于DFT插值的宽带波束形成器设计

本文提出一种基于DFT插值的宽带波束形成器设计方法。首先推导了具有频率不变波束图的连续线阵的灵敏度函数与离散线列阵加权系数之间的关系；接着给出了基于DFT插值的宽带波束形成器设计的两个步骤：（1）使用窄带波束形成器的设计方法计算在参考频率下基阵的加权系数；（2）根据参考频率下基阵的权系数与其它子带权系数之间的关系，利用DFT插值的方法求出其它子带的加权系数。最后，给出了一个设计实例说明本文方法的有效性。     

Effects of brefeldin-A on Golgi morphology in human cultured fibroblasts observed in three-dimensional stereo scanning electron microscopy

Brefeldin A (BFA) has been reported to cause disassembly of the Golgi. We have used three-dimensional (3-D) high-resolution scanning electron microscopy (HRSEM) to investigate these effects in human skin fibroblast cells. The spontaneous reassembly during prolonged exposure to BFA and some effects of forskolin were observed. A BFA concentration of 5μg/ml caused Golgi complexes to become vesicular, resulting in a progressive decrease in the size of the Golgi. Morphologic changes were visible within 2 min of BFA incubation, and by 30 min no identifiable Golgi could be found. Spontaneous reassembly of the Golgi apparatus upon the removal of the BFA or with continued long-term exposure with BFA could not be confirmed. Preliminary experiments with forskolin were not effective in reversing or inhibiting the effects of BFA in human fibroblast cells grown in culture. This inability for spontaneous reassembly and nonreversal by forskolin may reflect a differential effect of BFA in various cell types. HRSEM has proven to be useful for observing 3-D morphologic effects of BFA in Golgi.     

Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.     

A new precipitate phase in Al-4wt. % Cu thin-film interconnects

We report here the identification of a new precipitate phase in thin-film Al-4wt.%Cu metallization used for interconnects on integrated circuits. The phase is based on a trigonal distortion of a face centered cubic lattice. Computer simulation of electron diffraction intensities suggests that the basis structure is isomorphous with Al₂Ca but with a large and ordered population of vacancies on Cu sites. The reason for the formation of the new phase and its implications for electromigration reliability are discussed.     

New accurate two-noded shear-flexible curved beam elements

 There are two purposes of this work. One is to present two accurate two-noded finite elements which are derived from the potential energy principle and the Hellinger–Reissner functional principle respectively. The second is to show the successful application of the internal displacement parameters in developing a high-order related displacement-rotation interpolation field. Because the derived interpolation field is capable of accurately modeling deformation modes in extreme thin curved beams and nearly straight beams, both shear locking and membrane shocking are avoided. Several standard numerical tests display superior behaviors of the present elements. Received: 5 February 2002 / Accepted: 16 September 2002     

A hexane solution deposition of SnS2 films from tetrabutyltin via a solvothermal route at moderate temperature

SnS₂ films have been deposited on glass and alumina plate substrates by the reactions between an organotin precursor [tetrabuyltin, (CH₂CH₂CH₂CH₃)₄Sn] and carbon disulfide in n-hexane at the temperature range 180-200 °C for 10-40 h. The reaction system was oxygen free and applied at a moderate temperature. The films so prepared were characterized by techniques of X-ray diffraction, Scanning electron microscopy, Raman and Mössbauer spectroscopies. The films deposited on glass as well as on alumina plate have an average thickness of 30 μm, but have different rose-like morphologies, which are influenced by both the anisotropic growths of crystals and the different substrate structures. Photoluminescence measurements show that the films have an emission peak at approximately 590 nm.     

Defect structure of gold introduced by high-speed deformation

The effect of deformation speed on defect structures introduced into bulk gold specimens at 298 K has been investigated systematically over a wide range of strain rate from ′=10⁻² to 10⁶ s⁻¹. As strain rate increased, dislocation structure changed from heterogeneous distribution, so-called cell structure, to random distribution. Also, stacking fault tetrahedra (SFTs) were produced at anomalously high density by deformation at high strain rate. The anomalous production of SFTs observed at high strain rate is consistent with the characteristic microstructure induced by dislocation-free plastic deformation, which has been recently reported in deformation of gold thin foils. Thus, the results of the present study indicate that high-speed deformation induces an abnormal mechanism of plastic deformation, which falls beyond the scope of dislocation theory. Numerical analysis of dislocation structure and SFTs revealed that the transition point of variation of deformation mode is around the strain rate of 10³ s⁻¹.