应对第三代红外焦平面技术挑战的HgCdTe分子束外延

叙述了围绕第三代红外焦平面的需求所进行的HgCdTe分子束外延的一些研究结果.75mm HgCdTe薄膜材料的组分均匀性良好,80K下截止波长偏差为0.1μm.对所观察到的HgCdTe表面缺陷成核机制进行了分析讨论,获得的75mm HgCdTe材料平均表面缺陷密度低于300cm-2.研究发现As的表面黏附系数很低,对生长温度十分敏感,在170℃下约为1×10-4.计算表明,As在HgCdTe中的激活能为19.5meV,且随(Na∑Nd)1/3的增大呈线性下降关系,反比系数为3.1×10-5meV·cm.实验发现Hg饱和蒸汽压下,对应不同的温度240,380,440℃,As在HgCdTe中的扩散系数分别为(1.0±0.9)×10-16,(8±3)×10-15,(1.5±0.9)×10-13cm2/s.采用分子束外延生长的HgCdTe材料已用于红外焦平面探测器件的研制,文中报道了一些初步结果.     

基于局部梯度的神经网络非均匀性校正算法

为了解决传统神经网络算法在用于红外焦平面阵列(Infrared Focal Plane Array,IRFPA)非均匀性校正(Non-Uniformity Correction,NUC)时所面临的边缘模糊、收敛速度慢等问题,通过引入图像局部梯度特性对该算法进行了改进。通过用局部梯度相似度信息构造权值函数来对区域进行加权滤波,可以保留图像边缘信息。在迭代运算中,将梯度幅值加权的自适应参数规整因子加入了误差损失函数,并引入梯度幅值相关的自适应步长用以代替传统的固定步长,从而进一步提升了算法的校正效果和收敛速度。然后对算法的性能曲线和校正结果进行了分析。结果表明,与传统算法相比,改进的神经网络校正算法取得了更好的校正效果,其校正误差稳定低于前者,实现了有效抑制边缘模糊和提升收敛速度的目标。     

基于斜平面平滑优化的半全局立体匹配

基于斜平面平滑的半全局匹配算法虽然能很好地处理深度不连续区域,减少视差断裂现象,具有很好的视差平滑效果.但此方法计算量大,并且若输入的左右图像对不是理想校正的,最终得到的视差图中可能会出现黑色小方块.针对上述问题,本文提出了一种基于斜平面平滑优化的双目立体视觉算法,优化了视差斜平面拟合过程,提高了斜平面平滑的运算速度;另,通过对初始视差图中无效的视差值进行临近插值填充,很好地解决了视差图中的方块现象;同时考虑到同一分割块内的像素梯度值应比较接近,对图像分割时用到的能量函数增加梯度项,使分割区域更加合理.实验结果表明,本文算法能取得更好的视差图,主观效果得到改善,运算速度提高约40%.     

光刻胶段差对光刻图形的影响与改善

TFT光刻制程中,光刻胶段差使光胶在同一个光刻平面上,各区域的光刻程度不同,严重影响着光刻图形的质量。文章从光刻胶段差对光刻图形影响的原因进行分析,根据光强在投影光刻机光刻系统中焦点附近与光刻胶内部的变化特点,推导并计算出光刻胶段差区域内光强变化量为零时,光刻系统中光刻平面所应处于的位置,同时结合当前光刻系统焦平面的位置,计算出光刻平面的调整量,并以该调整量对当前光刻平面进行调整。结果表明:对于极限分辨率为2.41μm的投影光刻机,要使厚0.52μm的光刻胶段差内光强变化量为零,光刻平面调整量为9.434 42μm,且对光刻平面调整后10μm后,在DICD(Develop Inspection Critical Dimension)变化量较小的情况下,可显著改善沟道长为2.5μm的GOA(gate drive on array)区域的光刻胶残留。     

考虑红外焦平面器件非线性响应的一种非均匀性校正方法

针对红外焦平面阵列的非线性响应特性,提出了一种考虑非线性响应的“曲线—直线”校正方法,并给出了校正的计算公式.仿真实验结果说明此方法具有精度高,计算量小的优点,需要存储的参数少,易于硬件实现.     

透射式固态电光扫描器设计

针对红外成像系统常用光机扫描器的不足,提出了没有机械运动部件的全固态电光扫描器设计方法,给出了几种透射式固态电光扫描器结构,主要包括扫描列阵、耦合波导和控制电路三个部分.工作原理是：通过控制电路顺序控制各扫描单元光信号的传输,再通过耦合波导将光信号耦合到探测器上实现扫描成像.扫描列阵将完整图像分割成图像单元,耦合波导将空间位置不同的图像单元耦合到红外焦平面探测器上,控制电路用来控制扫描列阵各图像单元的工作状态.这种扫描器体积小、重量轻、结构紧凑,采用与红外焦平面探测器制作工艺相似的半导体制作工艺,具有与探测器集成的技术基础,控制起来更加方便.     

硅基红外焦平面阵列技术的新进展(Ⅱ)

主要介绍以硅为衬底的ＰｂＳ、ＰｂＳｅ、ＰｂＴｅ、ＰｂＳｎＳｅ、ＨｇＣｄＴｅ、ＩｎＳｂ等红外探测器焦平面阵列的新进展。     

Simulation of HgTe/CdTe interdiffusion using fundamental point defect mechanisms

A numerical model for interdiffusion in HgTe/CdTe systems based on fundamental point defect mechanisms has been developed. The model includes continuity equations for the flux of Hg and Cd on substitutional sites, cation vacancies, and Hg and Cd interstitials. Interdiffusion is modeled by simulating the coupled diffusion and interaction of these species. The Hg vacancy concentration used in the model was fit to measured hole data as a function of annealing temperature, Hg pressure, and composition. The Cd and Hg interstitial diffusion coefficients and concentrations were determined as a function of temperature and composition from low temperature Hg and Cd self-diffusion data. With this model, interdiffusion is simulated over a range of initial and annealing conditions. At high temperatures and/or Te saturated conditions, interdiffusion is dominated by diffusion via a vacancy mechanism. Interdiffusion is controlled by the flux of Cd interstitials at lower temperatures and/or higher Hg pressures.     

Progress in CdZnTe substrate producibility and critical drivers of IRFPA yield originating with CdZnTe substrates

With the goal of maximizing the yield of infrared focal plane arrays (IRFPAs), Santa Barbara Research Center’s (SBRC) Infrared Materials Producibility Program (IRMP) has focused on assessing and improving the quality, yield, and throughput of CdZnTe substrates. A baseline detector lot was fabricated to identify the critical drivers of IRFPA yield coming from the substrates and to evaluate the quality and yield of the current vendor base for CdZnTe substrates. Substrate induced defects and impurities that can potentially affect device performance and operability were carefully mapped out in detail on 44 × 67 mm² size substrates, received from IRMP substrate vendors as well as SBRC. This paper will report on the correlations found between this substrate characterization data base and the IRFPA level defect distributions. Key results from these correlation studies are: (1) extended defects found on the substrates with the Nakagawa etch correlated well with responsivity reduction in the final IRFPA; (2) cross-hatch patterns that were evident in the responsivity map correlated well with similar features seen by x-ray topography on LPE double layers; and (3) a possible correlation of device performance (leakage current at 78K) with copper and lithium impurities in the substrate. Recent initiatives toward improving the quality and yield of the substrate growth process have focused on improving purity in the pre-growth charge preparation, modification of growth parameters to reduce defects and scaling up of the vertical Bridgman growth process from its current 67 mm diameter boule size to 92 mm diameter boules. Promising initial results from the large diameter boule growth process will be shown. The 92 mm diameter CdZnTe boule (6 kg charge) shows two predominant single crystal grains encompassing 75% of boule volume. Defect characterization of boules grown under baseline and modified conditions is discussed.     

射频平面阵列目标位置控制系统的研究

阵列式射频仿真技术开始用于论证大型设备在复杂电磁环境下的效能评估试验,常规单一试验中心的球面阵列已难以适应此类试验,迫切需要构造一种新型阵列系统来完成新的试验,为此提出采用射频平面阵列式目标位置控制方案.设计并制作了平面阵列结构,论述了目标位置控制系统的阵列馈电方案以及软件模块,重点阐述了精位控制算法和粗位控制原理.提出四元组合成方案实现精位控制,并推导了四元组合成位置的角闪烁方程.最后在微波暗室内测试了典型频段下该系统的辐射信号合成角位置精度,结果表明该阵列系统在X波段的角位置模拟精度可达1 mrad,能够用于大型设备的效能评估试验.