四方相BaTiO3薄膜的自组装制备与表征

以(NH₄)₂TiF₆、 Ba(NO₃)₂ 和H₃BO₃为主要原料, 采用自组装单层膜(SAMs)技术, 以三氯十八烷基硅烷(octadecyl-trichloro-silane, OTS)为模版, 在玻璃基片上制备了四方相钛酸钡晶态薄膜. 改性基板的亲水性测定与原子力显微镜（AFM）测试表明, 紫外光照射使基板由疏水转变为亲水, 能够对OTS-SAM起到修饰作用. 金相显微镜观察结果显示,OTS单分子膜指导沉积的薄膜样品表面均匀, 表明OTSSAM对钛酸钡薄膜的沉积具有诱导作用; X射线衍射（XRD）与扫描电镜（SEM）表征显示, 空气中600℃下保温2h实现了薄膜由非晶态向四方相BaTiO₃晶态薄膜的转化过程, 制备的钛酸钡薄膜在基板表面呈纳米线状生长, 线长约在500～1000nm之间, 相互连接的晶粒大小约为100nm. 文章同时对自组装单层膜和钛酸钡薄膜的形成机理进行了探讨.     

超电容器复合活性炭电极的制备及性能研究

用高比表面积活性炭作为原料,酚醛树脂为粘结剂,在120℃高温下粘结成型制备系列超电容器用固体活性炭电极,改变酚醛树脂添加量考察不同炭化温度对复合活性炭电极炭化收率的影响。实验发现,随着炭化温度的提高,复合活性炭电极的炭化收率呈逐渐降低的趋势,炭化温度高于800℃时复合活性炭电极比电容量下降。酚醛树脂掺杂量多时收率降低。另外在酚醛树脂中加入固化剂可提高其炭化收率。不同组成的复合活性炭电极中,微孔活性炭含量大,则比电容量高。     

Formation of C49-TiSi2 in flash memories: a nucleation controlled phenomenon?

The formation of Ti silicides has been examined in flash memories with 0.25 μm linewidth by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. It has been observed that, after the first rapid thermal process and the selective metal etch, there is no silicide on the source and on a majority of drain contacts while C49-TiSi₂ is found on the gate. A pre-amorphisation implant increases drastically the formation of C49-TiSi₂ in the drain zone while modifications of annealing conditions have little impact. These results indicate that the formation of C49-TiSi₂ is most likely controlled by nucleation and that this nucleation is sensitive to both the width and the length of the reaction zone. The formation of a Ti rich silicide may play an important role in this nucleation by decreasing the driving force for the formation of C49-TiSi₂. Curiously enough, the formation of C49-TiSi₂ appears thus as a major concern for the salicide process in flash memories.     

藻类水华形成机理的模糊Petri网优化建模研究

在对湖库藻类水华形成机理深入研究的基础上,构建了描述藻类水华形成过程的Petri网机理模型,考虑影响藻类水华形成关键因子的综合作用机理,根据实验分析结论,通过构建模糊隶属度函数对Petri网机理模型中的库所信度进行模糊化处理,并采用粒子群算法对机理模型中涉及的权重进行优化率定,同时通过神经网络对机理模型库所信度进行自适应学习,实现了对藻类水华形成过程的机理建模和对藻类水华暴发的预测.     

<Emphasis Type="Italic">Ab Initio</Emphasis> Studies of Hydrogen Defects in CdTe

Using first-principles calculations based on density functional theory, we have investigated the nature of H defects in CdTe. The formation energy calculations indicate that the ground state position of the H inside the CdTe lattice depends on charge state: the lowest energy position for H⁰ and H⁺ is at the bond center site, while H⁻ prefers the tetrahedral interstitial site with Cd nearest neighbors (T_Cd). We find that H in CdTe acts as an amphoteric impurity. In p-type samples, H is in a positive charge state, acting as a donor to neutralize the free holes in the valence band, and in n-type samples H acquires an electron, compensating the donors in the sample.     

基于动态逆的队形保持控制器设计

研究了无人机之间存在气动耦合的编队飞行系统模型。对模型运用时标分离原则将其划分为快变和慢变两个子系统,并且快变子系统的输出作为慢变子系统的输入参与控制。两个子系统分别用动态逆设计控制器,并在慢回路用干扰观测器补偿逆误差和模型的不确定性。通过仿真说明所设计的紧密队形保持动态逆控制器是非常有效的。     

Junction Stability in Ion-Implanted Mercury Cadmium Telluride

Ion implantation into HgCdTe results in the production of Hg interstitials, which can be subsequently driven into the HgCdTe by an annealing process. This diffusive drive-in of the Hg interstitials fills vacancies and kicks out group I impurities and results in the formation of an n–p junction. In this work we report on the production of interstitials during baking subsequent to the ion implantation process. Various concentrations of metal vacancies were first introduced into mid-wavelength infrared (MWIR, 3 μm to 5 μm) HgCdTe by annealing under tellurium-saturated conditions at various temperatures. Baking subsequent to planar implantation of boron produced n–p junctions whose depths were measured by defect etching. The results were modeled using a simple diffusion limited model from a fixed surface concentration. The surface concentration was allowed to decrease exponentially to zero after a time, found to be of the order of ∼80 h to 150 h. Exhaustion of the interstitials sources produced by the implantation was nearly complete after ∼400 h. The total number of mercury interstitials produced was approximately 50% of the implant dosage.     

无人机自主编队飞行控制的技术问题

从未来无人机的性能需求出发,详细描述了无人机编队飞行的功能特点和核心技术。根据无人机的任务要求,将编队飞行分为作战编队、侦察编队和混合协同编队,同时研究了编队飞行控制的关键技术,并对无人机编队重构技术进行了探讨和分析。