控制CCL产量的几点分析

研究了如何在不进行设备改造的情况下,提高CCL产量的方法,指出了从四大工序入手是解决问题的关键。     

东方红浆砌石重力坝扬压力安全评价

东方红水库大坝是一座运行近40a的浆砌石重力坝，坝体裂缝、坝体渗漏及坝体碳化严重，扬压力有逐年增高的趋势。本文利用坝基扬压力测压管水位观测资料建立了测压管水位的统计模型，并结合现场渗漏实测流量资料建立了渗流反分析模型，详细分析了坝基的渗流性态和扬压力状态，并对其渗流性态做出安全评价。     

正压冲固基础海洋平台冰激振动动力响应

正压冲固基础海洋平台是一种新型平台桩基结构形式。采用三维有限元的数值分析方法,建立了正压冲固平台的三维有限元模型。基于冰激强迫振动理论提出动冰载荷的计算方法,根据海冰破碎长度和冰速确定冰载周期,冰强度限制的水平冰力作为冰力峰值,得到的动冰载荷用于正压冲固平台的动力响应分析,并依照规范计算了6倍桩径处刚性固定时的动力响应。三维有限元方法计算得到的动力响应大于6倍桩径刚性固定时的计算结果,结构安全性评估偏于安全。     

The Amygdala Modulates Hippocampus-Dependent Context Memory Formation and Stores Cue-Shock Associations.

Preexposing rats to the context facilitates subsequent contextual fear conditioning. This effect depends on the hippocampus (J. W. Rudy, R. M. Barrientos, & R. C. O'Reilly, 2002). The authors report that inactivating the basolateral region of the amygdala (BLA) by injecting muscimol, a GABAA agonist, before or after preexposure reduced this effect. In contrast, bilateral injections of anisomycin, a protein synthesis inhibitor, into BLA did not impair the consolidation of the context memory. However, when injected after fear conditioning, anisomycin impaired consolidation of both contextual and auditory-cue fear conditioning. Results are consistent with 2 ideas about the amygdala's contribution to memory: (a) It modulates memory formation in other regions of the brain, and (b) it is a storage site for cue-shock associations. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

A kinetic model for the acid-oxygen pressure leaching of Ni–Cu matte

A semi-empirical mathematical model for the acid-oxygen pressure leaching of Ni–Cu matte is presented, based on data from batch leaching experiments. The primary controlling factor in the leaching process is found to be galvanic inhibition of the more highly oxidized copper and nickel sulfide species by less oxidized species, particularly Ni alloy and Ni₃S₂. The leaching rate of many species is greatly reduced by the presence of one or both of these phases, and others will not commence leaching until neither is present. The mathematical model is based on first-order chemical reaction controlled rate expressions, as the reactions occurring are electrochemical in nature. Mass transfer effects are included only empirically. Some possibly diffusion-related phenomena are noted, although the model is not extended to incorporate these effects on a fundamental level. The model is verified and extended by the inclusion of several different factors that were tested experimentally. The effects of variations in O₂ flow rate and partial pressure, initial particle size, reaction pulp density and initial acid concentration were all studied, and included in the model. Variations in O₂ flow rate and partial pressure are found to affect the reaction rates via the dissolved oxygen concentration in the solution phase.     

LED生产过程中的质量控制

对LED封装过程可能出现的问题逐一指出，并提出解决的办法，着重介绍封装位置对LED发光亮度的影响。以期引起LED封装管理人员及工作人员的注意。     

结构-波浪-海床耦合系统中大圆筒结构的波压力响应

以沉入式大圆筒结构为对象，通过设计随机波浪水槽实验，测取了在单筒和连续筒两种结构型式、两种沉入深度和两种波谱输入下结构表面的动波压力分布。波面高度以及波压力历程均在领域进行分析。通过计算结构表面沿高程和沿环向的波压力谱及波压力传递函数，将单筒实测结果与基于线性绕射理论的解析解进行了比较，同时也详细对比了两种结构型式下的实测结果。文中汇报了在研究中获得的新发现及进行的相应分析，特别是在结构——波浪——海床动力相互作用下对波压力响应机理以及针对连续筒的研究，可为工程应用提供有价值的参考。     

聚四氟乙烯薄膜压敏胶粘带的研制

主要介绍了聚四氟乙烯薄膜和有机硅压敏胶制造压敏胶粘带的方法。     

Formation of C49-TiSi2 in flash memories: a nucleation controlled phenomenon?

The formation of Ti silicides has been examined in flash memories with 0.25 μm linewidth by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. It has been observed that, after the first rapid thermal process and the selective metal etch, there is no silicide on the source and on a majority of drain contacts while C49-TiSi₂ is found on the gate. A pre-amorphisation implant increases drastically the formation of C49-TiSi₂ in the drain zone while modifications of annealing conditions have little impact. These results indicate that the formation of C49-TiSi₂ is most likely controlled by nucleation and that this nucleation is sensitive to both the width and the length of the reaction zone. The formation of a Ti rich silicide may play an important role in this nucleation by decreasing the driving force for the formation of C49-TiSi₂. Curiously enough, the formation of C49-TiSi₂ appears thus as a major concern for the salicide process in flash memories.