具有多重PRF的雷达回波脉冲视频仿真电路的实现

在目标回波仿真原理的基础上，给出了一种新颖的脉冲多普勒雷达目标回波视频频脉冲仿真电路。通过计数分频和计数延时技术，该电路获得了大范围可变的脉冲重复频率和高精度的脉冲时延，能对距离不断变化的动目标进行实时模拟。给出了电路的结构框图，并对设计原理作了必要说明。     

跳频对GSM网络容量的贡献

本首先提出了射频跳频技术是提高网络容量的关键技术。在此基础上，以跳频为着眼点，分析并量化计算了跳频对干扰的改善度，同时根据跳频对容量的影响，给出现有技术条件下GSM网容量的极限。     

无线局域网技术及应用

无线局域网技术是目前发展迅速的技术，相对于有线局域网有许多优点。随着无线网络产品性能的提高和价格的不断下降，无线局域网技术有着广泛的应用前景。据此对无线局域网的基本概念、特点及其技术作了简单的介绍，提出了无线局域网面向应用的几种解决方案，并对发展前景作了预测。     

《无线电频率划分规定》学习心得

主要介绍学习新的《无线电频率划分规定》的目的，《无线电频率划分规定》的特点，作了哪些重要修改和划分表的主要内容及如何贯彻执行《无线电频率划分规定》。     

利用Hilbert-Huang变换提取地震信号瞬时参数

 通过Hilbert变换求取的信号瞬时参数并非对任何信号都有物理意义，此法通常要求被分析信号是窄带或平稳的，而且对噪声很敏感。而实际地震信号既非平稳又含有噪声，若在实际应用中不加考虑地对地震信号进行Hilbert变换以求取瞬时参数，这种情况下求取的瞬时参数将缺乏物理意义甚至失真。Hilbert-Huang变换是一种新的分析非平稳非线性信号的方法，它先将信号进行经验模态分解（EMD），形成有限个固有模态函数（IMF）之和，再对固有模态函数作Hilbert变换求取时频谱，求取的时频谱在时域和频域都具有较高的分辨率。本文将Hilbert-Huang变换应用于地震瞬时参数的提取，实例表明，对地震剖面做EMD可以得到不同时间尺度上的特征，Hilbert谱比传统的时频谱在时间和频率域上的分辨率都要高，强反射层在第1阶IMF瞬时频率剖面上比原瞬时频率剖面上表现得更为明显。     

The mirror effect and mixture signal detection theory.

The mirror effect for word frequency refers to the finding that low-frequency words have higher hit rates and lower false alarm rates than high-frequency words. This result is typically interpreted in terms of conventional signal detection theory (SDT), in which case it indicates that the order of the underlying old item distributions mirrors the order of the new item distributions. However, when viewed in terms of a mixture version of SDT, the order of hits and false alarms does not necessarily imply the same order in the underlying distributions because of possible effects of mixing. A reversal in underlying distributions did not appear for fits of mixture SDT models to data from 4 experiments. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

OFDM-MIMO系统及其频率同步分析

多媒体业务对无线通信的带宽与品质提出了更高的要求，OFDM和MIMO由于满足了这一需求被越来越多的无线通信标准采用所为底层的调制和传输技术。频率同步问题是OFDM—MIMO物理层设计中正确解调的前提和基础，本文介绍了OFDM—MIMO的原理、特点和频率同步问题的研究现状。     

三维有限元法分析频率对接地电阻的影响

提出了用涡流场的A-V有限元分析方法计算接地系统接地电阻的方法,分析了入地电流频率的变化对接地电阻的影响。计算结果表明,频率对接地体自身电阻的影响较大,但对散流电阻的影响很小。     

Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.