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151.
Tetsuya Ikuta Yuki Miyanami Hayato Iwamoto Takayoshi Shimura Kiyoshi Yasutake 《Science and Technology of Advanced Materials》2007,8(3):142-145
Selective epitaxial Si with a high arsenic concentration of 2.2×1019 atoms/cm3 was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride. 相似文献
152.
153.
将3组不同纤维体积分数的整体毡采用等温CVD进行沉积热解炭增密,结合CVD沉积过程中整体毡内气体传质数学模型,研究了整体毡的纤维体积分数对CVD增密过程的影响,研究结果表明:纤维体积低的整体毡沉积时增重率高;纤维体积分数高的整体毡容易获得较高密度的C/C复合材料;纤维体积分数超过35%的整体毡经过300 h的化学气相沉积,坯体的体积密度能达到1.52 g/cm~3。 相似文献
154.
溶液温度对电化学沉积氧化亚铜薄膜相成分和显微结构的影响 总被引:6,自引:0,他引:6
用电化学方法在不锈钢基体上沉积多晶Cu2O薄膜并用X射线衍射和扫描电进行了分析研究了溶液温度对薄膜相组成、晶粒尺寸和择优取向的影响,当溶液的PH=9,温度低于50℃时得到的是Cu2O/Cu复相薄膜,纯Cu2O薄膜可在溶液温度高于50℃时获得,纯Cu2O薄膜具有(100)择优取向,实验发现薄膜的晶粒尺寸随溶液温度的增加从0.12μm增加到0.65μm。 相似文献
155.
喷雾沉积快速凝固技术的发展与展望 总被引:2,自引:0,他引:2
喷雾沉积是制取大体积快凝材料的一种新工艺。本文综述了它的产生和发展,概述了其基本原理和过程控制。对该领域今后的发展动向,提出了一些新看法。 相似文献
156.
三参量速度分析的迭代算法 总被引:3,自引:3,他引:0
徐常练 《石油地球物理勘探》1993,28(5):614-622
采用预求倾角法进行三参量速度分析时,首先要确定地下界面的倾向和倾角。若没有准确速度,就求不准倾向和倾角,因此无法一次求得准确的结果。若采用迭代算法,则可以使三参量逐渐向精确值逼近。在地层倾角小于45^0的情况下,迭代是收敛的。在有噪音的情况下,噪音会使叠加道集上同相轴的时间发生变化,从而影响倾向的确定,因此在迭代的每一步,都必须估算倾向。理论实际资料的试算表明,采用迭代方法求取地下界面参数是切实可 相似文献
157.
Specular X-ray reflectivity from SiO2 thin films prepared on silicon substrates by plasma-enhanced chemical vapor deposition showed the films to have a characteristic width of the decay in density at the free surface of 17 Å, to be about three-quarters the density of -quartz, and to have an interfacial layer at the silicon interface that was of the order of 100 Å wide and less dense than the bulk of the film. After chemical-mechanical polishing the characteristic width of the decay in density at the free surface was reduced to 10 Å; furthermore, the near-surface region to a depth of 30 Å had a greater density than the as-deposited film. Off-specular reflectivity confirmed that the decrease in characteristic width at the free surface was due to reduced roughness upon polishing and also revealed that the lateral correlation length in the limit of long wavelengths was the same for both polished and unpolished samples. The compression of the near-surface region during polishing is believed to enhance the dissolution of SiO2 into the slurry which is necessary to achieve smooth surfaces. 相似文献
158.
Veena Misra Xiaoli Xu Brian E. Hornung Richard T. Kuehn Donald S. Miles John R. Hauser Jimmie J. Wortman 《Journal of Electronic Materials》1996,25(3):527-535
In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH4 and N2O. We have investigated the effect of temperature, pressure, and SiH4 to N2O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ~0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low Dit values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides. 相似文献
159.
160.
R. Niebuhr K. H. Bachem U. Kaufmann M. Maier C. Merz B. Santic P. Schlotter H. Jürgensen 《Journal of Electronic Materials》1997,26(10):1127-1130
Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N2O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried
ammonia using nitrogen (N2) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using
trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface.
Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N2O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations
in the range of 4×1016 cm−3 to 4×1018 cm−3 as measured by Hall effect. The observed carrier concentration increased with increasing N2O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B
exciton emission an exciton bound to a shallow donor. With increasing N2O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons.
These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius
and electronegativity arguments. 相似文献