高强混凝土T形截面双向压弯构件承载力的研究

对9根T形截面高强混凝土双向压弯构件进行试验研究,揭示了这类构件的破坏形态,并进一步分析T形截面正截面承载力的变化规律.     

钢筋混凝土环形截面构件受弯时强度计算

空心圆形电柱在安装时可能受到弯曲作用，其强度计算，是在做了合理假定后推导力学方程式。求解方程式并非易事，即使使用计算机也只是试算求解，或采用图解法。本文给出求解联立方程组的计算方法。     

电缆截面积计算中如何确定电导系数

在煤炭企业电缆截面积选择计算当中，如何确定电导系数的大小，是一个不能忽视的问题。本文经过分析、计算、论证给出了较为合理、准确的结果，为供电设计中电缆截面积的选择计算提供了重要的依据     

集中荷载作用下R.C.双向受弯约束梁斜截面抗剪强度的计算

在13根集中荷载作用下钢筋砼双向受弯约束梁斜截面抗剪试验研究的基础上，采用等效梭形截面法，将双向受弯约束梁转化为单向受弯约束梁，并推出集中荷载作用下钢筋混凝土双向受弯约束梁斜截面抗剪强度的计算方法．     

关于剖面符号边界问题的研究

总结了剖面符号可能的四种边界类型,指出了常见的边界错误情况,论证了剖视图中剖面符号不能穿越粗实线。     

齐齐哈尔市城市防洪堤险工弱段成险因素分析

在论述堤体、堤基岩性组成的基础上，对险工弱段成险因素进行了分析，提出预防和消险措施。     

新城金矿床围岩蚀变与金矿化的关系

本文就新城金矿围岩蚀变的特征、与金矿化的关系、金与多金属硫化物的关系、依变岩石中金的富集规律进行了探讨,指出了围岩蚀变是重要的成矿地质条件．     

34Mn6大断面圆管坯表面渣沟缺陷分析

本文结合理论并通过试验对比分析说明了 34Mn6大断面铸坯表面渣沟缺陷的成因 ,并制定了改善措施 ,为以后改进表面质量提供依据     

Stochastic aspects of bridge deck aeroelasticity under turbulent flow

Returning to an earlier frequency-domain analysis of the problem of long-span bridge response to ambient winds, the paper emphasizes the indispensable experimental information necessary to bring results into conformity with full-scale prototype action. Focus is placed upon the use of a sectional wind tunnel model under simulated turbulent flow as the prime source of this information, which consists principally of the flutter derivatives and the spectra of the wind forces, both obtained under turbulent flow. The effect of three-dimensional turbulence upon the flutter derivatives is observed to influence structural stability in a manner consistent with that observed in full-bridge wind tunnel models.     

Deep level transient spectroscopy on charge traps in high-k ZrO2

The deep trap properties of high-dielectric-constant (k) ZrO₂ thin films were examined by deep level transient spectroscopy (DLTS). The hole traps of a ZrO₂ dielectric deposited by sputtering were investigated in a MOS structure over the temperature range, 375 K-525 K. The potential depth, cross section and concentration of hole traps were estimated to be ∼ 2.5 eV, ∼ 1.8 × 10^− 16 cm² and ∼ 1.0 × 10¹⁶ cm^− 3, respectively. DLTS of ZrO₂ dielectrics can be used to examine the threshold voltage shift (?V_th) during the operation of SONOS-type flash memory devices, which employ high-k materials.