A computational model for analysing interactive buckling and delamination growth in composite structures

In this paper, a unified method is presented: (i) to model delaminated stiffened laminated composite shells; (ii) for synthesising accurate multiple post-buckling solution paths under compressive loading; and (iii) for predicting delamination growth. A multi-domain modelling technique is used for modelling the delaminated stiffened shell structures. Error-free geometrically nonlinear element formulations — a 2-noded curved stiffener element (BEAM2) and a 3-noded shell element (SHELL3) — are used for the finite element analysis. An accurate and simple automated solution strategy based on Newton type iterations is used for predicting the general geometrically nonlinear and postbuckling behaviour of structures. A simple method derived from the 3-dimensionalJ-integral is used for computing the pointwise energy release rate at the delamination front in the plate/shell models. Finally, the influence of post-buckling structural behaviour and the delamination growth on each other has been demonstrated.     

鱼类耳石扫描电镜样品制备与观察

本文介绍了一种鱼类耳石样品的扫描电镜制样方法，通过对草鱼耳石进行包埋，抛磨，并用合适的腐蚀剂处理，用ＳＥＭ成功地观察了耳石的日轮及超微结构，该方法简便易行，保证所观察耳石样品的微观结构完整与清晰。     

Morphological and kinetics study of PEO/PVC blends

The kinetics of spherulite radial growth and the morphology of the compatible system PEO/PVC have been studied by optical microscopy. The usual spherulite radial growth behaviour has been found for compatible blends with PEO content higher than 70%. For lower composition, distortion of the usual spherulite morphology has been observed; the anomalies have been attributed to partial miscibility of the components.     

Selective area epitaxy of CdTe

We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique. This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential in order to achieve good pattern definition.     

An investigation of pore cracking in titanium welds

Two welded Ti-6A1-4V pressure vessels leaked prematurely in service. The leaks were caused by cracks emanating from weld porosity. The cracks originated during fabrication, with subsequent growth in service leading to the formation of the leak paths. Pore cracking is thought to be caused by a mechanism that involves both sustained-load and cyclic contributions, with the former being the more prominent. It is shown that the tendency for cracking is influenced by pore position and that pore size is not a deciding factor in that regard. The factors that govern pore cracking are discussed, and the possible role of interstitial embrittlement is assessed.     

Crystal orientation of β-phase isotactic polypropylene induced by magnetic orientation of N,N′-dicyclohexyl-2,6-naphthalenedicarboxamide

Melt crystallization of isotactic polypropylene (iPP), containing crystallites of N,N′-dicyclohexyl-2,6-naphthalenedicarboxamide (DCNDCA) as a nucleating agent of the the β-phase iPP crystal, is carried out under a magnetic field (6 T) to obtain the alignment of the iPP crystal induced by magnetic alignment of DCNDCA. In a previous paper, DCNDCA was reported to undergo magnetic alignment in a liquid suspension. The obtained iPP sample exhibits alignment of the β-phase crystal with the c-axis aligned perpendicular to the magnetic field. The comparison of this alignment of iPP with the reported magnetic alignment of DCNDCA indicates that the β-phase crystal grows epitaxially on the DCNDCA crystal. The (330)_β plane of the iPP crystal lies on the bc-plane of the DCNDCA crystal in which the direction of the c-axis of the iPP coincides with the direction of the b-axis of the DCNDCA crystal.     

Growth rate and surface microstructure in α(6H)–SiC thin films grown by chemical vapor deposition

Monocrystalline 6H-SiC thin films have been epitaxially grown on off-axis 6H-SiC {0001} substrates in the temperature range of 1623–1873 K via chemical vapor deposition. The growth rate was a strong function of the growth temperature and the reactant gas concentration. The activation energies for growth were 64 kJ/mole and 55 kJ/mole for the (0001) Si face and the (0001) C face, respectively. The concentration of growth pits in the films increased as a function of decreasing deposition temperature, increasing concentration of reactant gases and increasing off-axis orientation. Beta-SiC islands were also observed in the epilayers when the (SiH₄ + C₂H₄)/H₂ ratio was ≥2.5:3000.     

强化管理机制推进机械制造企业快速发展

随着国有企业改革的不断深化,市场竞争愈加激烈,针对机械行业的现状,从3个方面探讨了强化管理机制,推进机械制造企业可持续快速发展的途径.     

Mechanism for the Peritectic Reaction and Growth of Aligned Grains in YBa2Cu3O6+x

It is experimentally observed that the peritectic reaction, 211 + liquid → 123, can be driven essentially to completion in 1 h at an undercooling of only ∽30°C. The kinetic data, together with the observed microstructures, are inconsistent with the normal mechanism of the peritectic reaction. It is proposed that the mechanism of the reaction involves dissolution of 211 particles into the liquid and precipitation of solid 123. The aligned grain structure is explained through sympathetic nucleation of new 123 grains on existing grains.     

Microstructure of Silicon Carbide Whiskers Synthesized by Carbothermal Reduction of Silicon Nitride

The microstructure of silicon carbide whiskers synthesized by carbothermal reduction of silicon nitride has been studied using transmission electron microscopy. All of the whiskers examined are single crystals, and grow in the (111) crystallographic direction. Two different forms of stacking faults and microtwins were observed; in one the planar defects are normal to the whisker growth direction, and the other has the defect planes at an angle of about 70° to the growth axis, while both forms of the defects are on the [111] closed-packed planes. Without the addition of catalyst, droplets containing metallic impurities were not found at the tips of the whiskers synthesized by the present process. A core and outer regions were observed in the single-crystal whiskers, which may be evidence that the whiskers were formed by a two-stage mechanism.