1998年~1999年磁性功能材料研究和应用新进展

综述了１９９８年～１９９年间若干磁性功能材料研究和应用新进展。其内容包括：（１）磁传感器新材料;（２）六角晶系微波铁氧体材料;（３）大容量自旋阀磁存储器;（４）磁薄带和磁薄膜变压器;（５）大功率应用的铁氧体材料。     

Current Understanding of Structure–Processing–Property Relationships in BaTiO3–Bi(M)O3 Dielectrics

As part of a continued push for high permittivity dielectrics suitable for use at elevated operating temperatures and/or large electric fields, modifications of BaTiO₃ with Bi(M)O₃, where M represents a net‐trivalent B‐site occupied by one or more species, have received a great deal of recent attention. Materials in this composition family exhibit weakly coupled relaxor behavior that is not only remarkably stable at high temperatures and under large electric fields, but is also quite similar across various identities of M. Moderate levels of Bi content (as much as 50 mol%) appear to be crucial to the stability of the dielectric response. In addition, the presence of significant Bi reduces the processing temperatures required for densification and increases the required oxygen content in processing atmospheres relative to traditional X7R‐type BaTiO₃‐based dielectrics. Although detailed understanding of the structure–processing–property relationships in this class of materials is still in its infancy, this article reviews the current state of understanding of the mechanisms underlying the high and stable values of both relative permittivity and resistivity that are characteristic of BaTiO₃‐Bi(M)O₃ dielectrics as well as the processing challenges and opportunities associated with these materials.     

La0.67-xBixSr0.33MnO3化合物多孔陶瓷样品的微结构与CMR效应

用固相反应法制备了钙钛矿型氧化物La0．67-xBixSr0．33MnO3(x=0，0．1，0．2)多孔陶瓷样品，研究了这些化合物的电磁性质和CMR效应j实验结果显示，Bi有助于晶粒的长大，并使电阻率峰值向低温方向移动。多孔样品的MR主要取决于显微结构，在0-300K温度范围内MR随温度升高单调下降。在较高的温度下观察到了低场磁电阻(LFMR)效应。与多晶致密样品相比，化合物多孔样品的电阻率峰变宽，峰值下降。     

一种低复杂度的正六边形星座信号的解调算法

针对正六边形星座调制信号(HSC)解调算法未达最优,提出了一种基于非正交矢量投影的HSC低复杂度解调算法. 在典型正六边形星座结构的基础上,分析计算了正六边形信号矢量的投影系数和算法的运算复杂度,研究了噪声对接收信号的影响,并结合高斯-勒让德数值分析方法给出了信噪比门限. 结果表明,该解调算法正确运行的复杂度约为基向量投影解调算法的30%.     

铜银改性六方介孔硅材料的结构及抗菌性能

采用溶胶-凝胶法,合成了铜银改性的六方介孔二氢化硅(hexagonal mesoporous silica,HMS)无机抗菌材料,通过X射线衍射、顺磁共振、紫 外漫反射、Fourier红外、热重-差热分析、环境扫描电镜、电子能谱及N2的吸附-脱附技术对材料结构进行了表征,并以大肠杆菌、金黄色葡萄球菌、枯草杆菌及芽孢杆菌为实验对象考察了材料的抗菌性能.结果表明:铜、银已引入HMS载体的骨架,材料的介孔结构、孔径、粒子形貌等也发生了明显变化,脱模的热化学过程大大缩短,对紫外-可见光吸收明显增强;抗菌实验显示材料抗菌惟能良好.对枯草杆菌及芽孢杆菌的抗菌效果最佳,铜银原位改性HMS的用量为1.00g/L,12h后即可将两者彻底杀灭.     

电流互感器极性、变比、相序正确性试验方法

变电站电流互感器二次回路接线的正确性是变电站安全运行的一项基本保证。通常是在变电站投运后有负荷的情况下进行六角图测试,既拖延投运时间,又对变电站一次、二次设备在测试期间的安全运行埋下了隐患。文章以日月山750 kV变电站为例,介绍投运前进行模拟变压器短路试验来检查电流互感器的极性、变比、相序以及二次接线正确性的方法,经实际测试验证,是一项可行、可推广的试验方法,它极大地提高了变电站投运效率,为变电站的一次投运成功及变电站安全运行提供可靠保障。     

Dielectric Properties and Relaxation in (1−x)BiScO3–xBa(Mg1/3Nb2/3)O3 Solid Solutions

The dielectric properties and frequency dispersion associated with a dielectric relaxation were evaluated within the perovskite (1− x )BiScO₃– x Ba(Mg_1/3Nb_2/3)O₃ solid solution systems (0.7 ≤ x ≤ 1). With increasing BiScO₃, the room-temperature dielectric permittivity at low frequency (100 Hz) increased up to 115 at x = 0.7, and a dielectric relaxation phenomenon was evident. Relaxation parameters were analyzed using several Arrhenius-type equations, and the microwave dielectric property measurement using rectangular wave-guide method enabled confirmation of the extrapolated value of the Arrhenius plot. The result of the microwave dielectric property measurement was also checked with J -function fitting based on the frequency-dependent Gaussian distribution of the associated dielectric loss data at low frequency.     

Nano Sized Copper Selenide Thin Film Pre-Cursor by A Liquid Phase Chemical Growth Process

The deposition of copper selenide(CuSe)thin films was carried out using liquid phase chemical bath deposition process at the optimized growth parameters as:60℃deposition temperature,90 minutes deposition time,pH equal to 10.5±0.1 and 72±2 r/min speed of mechanical rotation.The as-grown deposits exhibited excellent uniformity and physical adherency with the substrate surface and are smooth and diffusely reflecting with colour changing from yellowish orange to dark chocolate during deposition.The layer is of the order of 300 nm thick.The EDS analysis technique gave film composition to be nearly stoichiometric(Cu=47.89%,Se=52.11%).An X-ray diffraction analysis showed CuSe to be polycrystalline hexagonal with a good match of d-values and intensities of reflections.The crystallite size is in the nanorange(50-60 nm).The as-deposited CuSe exhibited a high coefficient of absorption(α=105cm-1)with a direct optical band gap of 1.81 eV.Compared to other chalcogenides,CuSe films exhibit low resistance;room temperature electrical resistivity being 1.55×103?cm.The electrical conductivity decreased with increase in temperature up to 473 K;showing totally unusual behaviour from that of the semiconducting property.The thermo probe measurements showed n-type conduction of the samples.